Surface confined quantum well state in MoS2(0001) thin film

Abstract

Surface confined quantum well state (scQWS) is a QWS confined around the surface of a thin film whose electronic energy is smaller than the work function of the film. The scQWS is rather rare in most thin films. Here, we show the existence of scQWS in thin films of transition metal dichalcogenides, MoS 2 . Signatures of scQWS are identified as the overall downward band dispersion in the bulk gap of 2 H-MoS 2 thin film at larger binding energy range. These scQWSs are also characterized with a Shockley-type surface state having an inverse parabolic decay into the film and a symmetric (asymmetric) distribution of projected charge density at the two surfaces of odd-layer (even-layer) films. Our findings of scQWS in MoS 2 shed some light on understanding the electronic properties of 2D materials with implications in future 2D electronic devices. V C 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4934610] APPLIED PHYSICS LETTERS 107, 161602 (2015) This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP: 155.98.2.187On: Thu, 05 Nov 2015 21:55:41 161602-2Sun et al.

Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaOx-Based RRAM

“…This is owing to TiN x O y /MoS 2 /TaO x quantum well formation, which acts as SCQW. Sun et al have also reported SCQW in MoS 2 thin film . This n-type MoS 2 layer in the S2 structure confines extra electrons that are coming from the TE and suppresses the I R more than S1 (16.8 pA vs 0.57 nA at a V read of −2 V) remarkably.…”

“…Sun et al have also reported SCQW in MoS 2 thin film. 48 This n-type MoS 2 layer in the S2 structure confines extra electrons that are coming from the TE and suppresses the I R more than S1 (16.8 pA vs 0.57 nA at a V read of −2 V) remarkably. Wu et al have mentioned MoS 2 as a triboelectric electron-acceptor layer in their triboelectric nanogenerators.…”