Quantum optics of soliton microcombs

Guidry, Melissa A.; Lukin, Daniil M.; Yang, Ki Youl; Trivedi, Rahul; Vučković, Jelena

doi:10.1038/s41566-021-00901-z

Cited by 98 publications

(74 citation statements)

References 61 publications

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“…Due to the unprecedented compactness, low-noise, high power-efficiency, and broad spectral bandwidth, soliton Kerr combs (microcombs) have attracted considerable research interest and been extensively studied for spectroscopy [3], communications [4], frequency synthesizer [5], optical clock [6], microwave photonics [7] and sensor applications [8]. Over the past several years, through the substantial exploration of the fundamental physics and microresonator fabrication, researchers have realized Kerr solitons in a growing number of platforms, including ultra-high Q MgF 2 [9], silica [10], and monolithic integrated platforms such as Si 3 N 4 [1,[11][12][13], LiNbO 3 [14], AlGaAs [15] and Ta 2 O 5 [16], as well as the wide-bandgap semiconductors AlN [17,18], SiC [19] and GaN [20].…”

Section: Introductionmentioning

confidence: 99%

Dual-mode microresonators as straightforward access to octave-spanning dissipative Kerr solitons

Weng¹,

Afridi²,

Li³

et al. 2022

Preprint

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The Kerr soliton frequency comb is a revolutionary compact ruler of coherent light that allows applications, from precision metrology to quantum information technology. The universal, reliable, and low-cost soliton microcomb source is key to these applications. In this work, we thoroughly present an innovative design strategy for realizing optical microresonators with two adjacent modes, separated by approximately 10 GHz, which stabilizes soliton formation without using additional auxiliary laser or RF components. We demonstrate the deterministic generation of the singlesolitons that span 1.5-octaves, i.e., near 200 THz, via adiabatic pump wavelength tuning. The ultra-wide soliton existence ranges up to 17 GHz not only suggests the robustness of the system but will also extend the applications of soliton combs. Moreover, the proposed scheme is found to easily give rise to multi-solitons as well as the soliton crystals featuring enhanced repetition rate (2 and 3 THz) and conversion efficiency greater than 10%. We also show the effective thermal tuning of mode separation for stably accessing single-soliton. Our results are crucial for the chip-scale self-referenced frequency combs with a simplified configuration.

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Section: Introductionmentioning

confidence: 99%

Dual-mode microresonators as straightforward access to octave-spanning dissipative Kerr solitons

Weng¹,

Afridi²,

Li³

et al. 2022

Preprint

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“…Integrated nonlinear photonics have combined nonlinear optics with state-of-the-art photonic integration and have unprecedentedly promoted light-matter interactions in terms of efficiency, bandwidth, and coherence [1][2][3][4][5][6] . They have enabled revolutionary techniques including chip-integrated optical frequency combs (OFCs) 5,7 , ultra-high bandwidth electrooptical modulation 2 , and chip-scale quantum optics 8 . Of particular interest is the dissipative soliton-based OFCs in photonic integrated microresonators, which can be generated at a low pump power 9 and have a broad bandwidth with fully coherent laser lines, benefiting from cavity-enhanced nonlinear efficiency and the lithographically controlled dispersion engingeering 7 .…”

Section: Introductionmentioning

confidence: 99%

“…Tremendous nonlinear material platforms have been developed to realize highperformance soliton microcombs 7 . Recent advances have witnessed several material platforms that could successfully support integrated soliton microcombs, such as silicon nitride (Si3N4) 6,19,20 , high-index doped silica (Hydex) 11,21 , aluminum nitride (AlN) 22,23 , gallium nitride (GaN) 24 , lithium niobate (LiNbO3) [25][26][27] , silicon carbide (SiC) 8,28 as well as AlGaAs 9,29 on insulator. Amorphous Si3N4 seems to be particularly fruitful in soliton combs, which has wide transparency, free from two-photon absorption (TPA), higher nonlinearity (2.4 × 10 -19 m 2 /W) than Hydex, and has supported record-high quality (Q) factors in integrated microresonators 6 .…”

Section: Introductionmentioning

confidence: 99%

“…of all comb lines excluding the pump and P pump in is the input power on-chip) is around 21.8%, which could be improved by optimizing the coupling structure or introducing coupled-microresonator geometry for dynamic adjustment of AMXs based on our GeSbS ChG platform8 . Meanwhile, we performed numerical simulations based on the Lugiato-Lefever equation (LLE) model54 .…”

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confidence: 99%

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Soliton Microcombs in Integrated Chalcogenide Microresonators

Xia¹,

Yang²,

Zeng³

et al. 2022

Preprint

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Photonic integrated microcombs have enabled advanced applications in optical communication, microwave synthesis, and optical metrology, which in nature unveil an optical dissipative soliton pattern under cavity-enhanced nonlinear processes. The most decisive factor of microcombs lies in the photonic material platforms, where materials with high nonlinearity and in capacity of high-quality chip integration are highly demanded. In this work, we present a home-developed chalcogenide glasses-Ge25Sb10S65 (GeSbS) for the nonlinear photonic integration and for the dissipative soliton microcomb generation. Compared with the current integrated nonlinear platforms, the GeSbS features wider transparency from the visible to 11-μm region, stronger nonlinearity, and lower thermo-refractive coefficient, and is CMOS compatible in fabrication. In this platform, we achieve chip-integrated optical microresonators with a quality (Q) factor above 2×10^6, and carry out lithographically controlled dispersion engineering. In particular, we demonstrate that both a bright soliton-based microcomb and a dark-pulsed comb are generated in a single microresonator, in its separated fundamental polarized mode families under different dispersion regimes. The overall pumping power is on the ten-milliwatt level, determined by both the high Q-factor and the high material nonlinearity of the microresonator. Our results may contribute to the field of nonlinear photonics with an alternative material platform for highly compact and high-intensity nonlinear interactions, while on the application aspect, contribute to the development of soliton microcombs at low operation power, which is potentially required for monolithically integrated optical frequency combs.

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“…[ 27,39,40 ] With this method Q‐factors in the 10 6 have been recently demonstrated in the IR range. [ 41,42 ]…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Photonic Resonators in Bulk 4H‐SiC

Schaeper

Fröch

Kim

et al. 2021

Adv Materials Technologies

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of scalability. Second, optically active defects in the material are known in the visible and the infrared range, thus overcoming stringent criteria for long distance quantum protocols that require low transmission losses through optical fibers. [5] Third, a range of defects in this material is known to possess manipulatable spin properties, which is crucial towards the realization of optically addressable qubits. [6][7][8][9][10][11][12][13][14][15][16][17] Recent progress regarding the characterization of these defects has also shown exceptionally long coherence times, boosting their attractiveness and applicability as quantum memory. [18][19][20][21] Exceeding these major advantages, the material also has an exceptionally high refractive index of ≈2.6 in the visible and infrared (IR), a piezoelectric response, strong higher-order non-linearities, [22,23] and can be reliably doped into p and n-type forms. This expansive list of material properties gives SiC an almost unrivaled status as a material platform to realize nanophotonic integrated circuits with potential applications in quantum technologies.Yet, to fully leverage the potential of SiC quantum emitters, reliable fabrication approaches are essential for the engineering of photonic architectures and to augment their qubit properties. [1,[24][25][26][27] Accordingly, various fabrication methods and protocols have emerged over the recent years. Initially, such schemes included the fabrication of devices from epitaxial SiC thin films grown on Si, which could be released by a standard wet chemical etch. [28][29][30][31][32] However, this is only applicable to the 3C polytype and moreover suffers from growth defects at the Si-SiC interface. As an alternative differently doped epitaxial layers of 4H-SiC were utilized, where the top layer could be released by a photoelectrochemical assisted etch. [33,34] Yet, this scheme can also be seen as disadvantageous because of the presence of dopants which can deteriorate the spin properties of the qubit. Alternatively, the smart cut method was frequently demonstrated to fabricate SiC thin films of any polytype on an insulator platform. [35][36][37][38] However, in this method high dose ion implantation is used, introducing substantial damage, which is as well detrimental to the qubit properties. To overcome this problem, a pathway for integration of high-quality epitaxial SiC on insulator has recently been shown. In this case, bulk SiC is wafer bonded to a SiO 2 wafer and subsequently, the bottom SiC side is reduced to the desired device layer thickness, forming a thin film of high-quality SiC on insulator. [27,39,40] With this method Q-factors in the 10 6 have been recently demonstrated in the IR range. [41,42] The design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work, a Faraday cage-based oblique angle etch method is applied to fabricate various functional photonic devices from 4H Sil...

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Quantum optics of soliton microcombs

Cited by 98 publications

References 61 publications

Dual-mode microresonators as straightforward access to octave-spanning dissipative Kerr solitons

Dual-mode microresonators as straightforward access to octave-spanning dissipative Kerr solitons

Soliton Microcombs in Integrated Chalcogenide Microresonators

Fabrication of Photonic Resonators in Bulk 4H‐SiC

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