2018
DOI: 10.1038/s41535-018-0100-9
|View full text |Cite
|
Sign up to set email alerts
|

Quantum materials for spin and charge conversion

Abstract: Spintronics aims to utilize the spin degree of freedom for information storage and computing applications. One major issue is the generation and detection of spins via spin and charge conversion. Quantum materials have recently exhibited many unique spindependent properties, which can be used as promising material candidates for efficient spin and charge conversion. Here, we review recent findings concerning spin and charge conversion in quantum materials, including Rashba interfaces, topological insulators, t… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

4
103
0
1

Year Published

2019
2019
2021
2021

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 171 publications
(114 citation statements)
references
References 161 publications
4
103
0
1
Order By: Relevance
“…Conversely, the injection of a spin current into a Rashba system generates a net charge current (inverse Edelstein effect, IEE or spin galvanic effect) 4 . The EE and IEE can also be realized at surfaces of threedimensional topological insulators 5 , and have been predicted in other types of quantum materials 6,7 .…”
mentioning
confidence: 79%
“…Conversely, the injection of a spin current into a Rashba system generates a net charge current (inverse Edelstein effect, IEE or spin galvanic effect) 4 . The EE and IEE can also be realized at surfaces of threedimensional topological insulators 5 , and have been predicted in other types of quantum materials 6,7 .…”
mentioning
confidence: 79%
“…Ferromagnetic oxides and strongly correlated metals exhibit behaviors that are fundamentally fascinating and also technologically important. For example, the field of spintronics constitutes an active research area for physicists and engineers, and its potential for coupling with conventional electronics is highly attractive. In particular, ferromagnetic oxides that exhibit high spin polarization, such as La 1– x Sr x MnO 3 (LSMO), could provide a platform for spintronic and opto‐spintronic applications if integrated on semiconductors.…”
Section: Materials and Functional Propertiesmentioning
confidence: 99%
“…The giant tunable Rashba spin‐orbit coupling, high mobility, and long momentum relaxation time at the oxide interfaces provide a promising combination for applications in spintronics . Using a three‐terminal device, Reyren et al first reported injection of a spin current from a ferromagnetic Co layer into the LAO/STO 2DEG through Hanle experiments.…”
Section: Magnetic Fieldmentioning
confidence: 99%