Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells

Tiraş, E.; Balkan, N.; Ardalı, Şükrü; Güneş, Mustafa; Fontaine, C.; Arnoult, Alexandre

doi:10.1080/14786435.2010.525543

Cited by 12 publications

(8 citation statements)

References 44 publications

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“…7,8 The SdH oscillations and classical low-field Hall-effect measurements allow for the determination of both the quantum and transport lifetimes of the electrons in the graphene and hence to investigate the relative importance of various scattering mechanisms. The quantum lifetime can be determined from the magnetic-field dependence of the amplitude of the SdH oscillations (i.e., Dingle plots) at a constant temperature provided that the electron effective mass is known 26,30,31 ln…”

Section: 32mentioning

confidence: 99%

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Effective mass of electron in monolayer graphene: Electron-phonon interaction

Tiraş¹,

Ardalı²,

Tiras³

et al. 2013

Journal of Applied Physics

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Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide Appl. Phys. Lett. 102, 123106 (2013) Temperature dependent thermal conductivity of a free-standing graphene nanoribbon Appl. Phys. Lett. 102, 111911 (2013) Directional quantum transport in graphyne p-n junction J. Appl. Phys. 113, 073710 (2013) Charge transport in lightly reduced graphene oxide: A transport energy perspective J. Appl. Phys. 113, 063710 (2013) Effect of chiral property on hot phonon distribution and energy loss rate due to surface polar phonons in a bilayer graphene J. Appl. Phys. 113, 063705 (2013) Additional information on J. Appl. Phys. Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m À1 and magnetic fields up to 11 T, have been used to investigate the electronic transport properties of monolayer graphene on SiC substrate. The number of layers was determined by the use of the Raman spectroscopy. The carrier density and in-plane effective mass of electrons have been obtained from the periods and temperature dependencies of the amplitude of the SdH oscillations, respectively. The effective mass is in good agreement with the current results in the literature. The two-dimensional (2D) electron energy relaxations in monolayer graphene were also investigated experimentally. The electron temperature (T e ) of hot electrons was obtained from the lattice temperature (T L ) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss indicate that the energy relaxation of electrons is due to acoustic phonon emission via mixed unscreened piezoelectric interaction and deformation-potential scattering.

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Section: 32mentioning

confidence: 99%

“…This result indicates that only 2D electron densities contribute to the transport properties and, therefore, parallel conduction is negligible. The effective mass m Ã can be extracted from the temperature dependence of the SdH amplitude at a constant magnetic field using 30,31 AðT; B n Þ AðT 0 ; B n Þ ¼…”

mentioning

confidence: 99%

Effective mass of electron in monolayer graphene: Electron-phonon interaction

Tiraş¹,

Ardalı²,

Tiras³

et al. 2013

Journal of Applied Physics

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“…3. The double-differentiation technique does not change the peak position or the period of the oscillations [19,23].…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, in order to exclude the effects of the background magnetoresistance (R b ) and to extract the SdH oscillations, we used the negative second derivative of the raw magnetoresistance data with respect to the magnetic field, i.e. (Ào 2 R xx /oB 2 ) [7,19,22,23]. The oscillations in the second derivative of magnetoresistance have well defined envelopes and are symmetrical about the horizontal line as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

Tiraş

Çelik

Mutlu

et al. 2012

Superlattices and Microstructures

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a b s t r a c tThe two-dimensional (2D) electron energy relaxation in Al 0.25 Ga 0.75 N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T e ) of hot electrons was obtained from the lattice temperature (T L ) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al 0.25 Ga 0.75 N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.

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Electron and hole energy relaxation rates in GaInNAs/GaAs quantum wells via deformation potential and piezoelectric scattering

Tiraş

Ardalı

2012

Physica Status Solidi (b)

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The two‐dimensional (2D) electron and hole energy relaxation associated with acoustic phonon emission in n‐ and p‐type modulation doped Ga0.7In0.3NyAs1–y/GaAs quantum wells has been investigated experimentally using Shubnikov‐de Haas (SdH) effect measurements performed as a function of lattice temperature and applied electric field. Nitrogen concentration dependence of the effective mass and quantum lifetime of the 2D electrons in the n‐type samples have been determined from the temperature and magnetic field dependencies of the amplitude of SdH oscillations, respectively. The in‐plane effective mass of the 2D electrons increases when the nitrogen mole fraction is increased from y = 0.004 to 0.010 but remains the same when it is increased to y = 0.015. The values obtained for quantum lifetime suggest that interface roughness is the dominating scattering mechanism in n‐type Ga0.7In0.3NyAs1–y/GaAs quantum wells. The electron temperature (Te) of hot electrons and the hole temperature (Th) of hot holes have been obtained from the lattice temperature (TL) and applied electric field dependencies of amplitude of SdH oscillations. The experimental results for the electron/hole temperature dependence of power loss are compared with the current theoretical models for power loss in 2D semiconductors, which include both piezoelectric and deformation‐potential scattering. For n‐type samples, the power loss from the electrons is found to be proportional to (T–T) with γ in the range from 3.48 to 4.66, indicating that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. For the p‐type sample, the power loss is approximately proportional to (T–T). This behavior is in accord with the theoretical predictions for the variation of power loss with hole temperature for a 2D hole gas in the equipartition regime.

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Quantum lifetimes and momentum relaxation of electrons and holes in Ga_0.7In_0.3N_0.015As_0.985/GaAs quantum wells

Abstract: Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs Quantum Wells

Cited by 12 publications

References 44 publications

Effective mass of electron in monolayer graphene: Electron-phonon interaction

Effective mass of electron in monolayer graphene: Electron-phonon interaction

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

Electron and hole energy relaxation rates in GaInNAs/GaAs quantum wells via deformation potential and piezoelectric scattering

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