Effective mass of electron in monolayer graphene: Electron-phonon interaction

Abstract

Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide Appl. Phys. Lett. 102, 123106 (2013) Temperature dependent thermal conductivity of a free-standing graphene nanoribbon Appl. Phys. Lett. 102, 111911 (2013) Directional quantum transport in graphyne p-n junction J. Appl. Phys. 113, 073710 (2013) Charge transport in lightly reduced graphene oxide: A transport energy perspective J. Appl. Phys. 113, 063710 (2013) Effect of chiral property on hot phonon distribution and energy loss rate due to surface polar phonons in a bilayer graphene J. Appl. Phys. 113, 063705 (2013) Additional information on J. Appl. Phys. Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m À1 and magnetic fields up to 11 T, have been used to investigate the electronic transport properties of monolayer graphene on SiC substrate. The number of layers was determined by the use of the Raman spectroscopy. The carrier density and in-plane effective mass of electrons have been obtained from the periods and temperature dependencies of the amplitude of the SdH oscillations, respectively. The effective mass is in good agreement with the current results in the literature. The two-dimensional (2D) electron energy relaxations in monolayer graphene were also investigated experimentally. The electron temperature (T e ) of hot electrons was obtained from the lattice temperature (T L ) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss indicate that the energy relaxation of electrons is due to acoustic phonon emission via mixed unscreened piezoelectric interaction and deformation-potential scattering.

A first principles method to simulate electron mobilities in 2D materials

“…This is in reasonable agreement with mobility measurements of free-standing graphene (up to 120 000 cm 2 V −1 s −1 ) and with previous predictions [24,25]. Thinking in terms of effective masses, this is consistent with the fact that the carrier mass in the Dirac cone around the pseudo-gap is very small, with a value of 0.012 free electron masses (m e ) [26].…”

Temperature dependence of electron density and electron–electron interactions in monolayer epitaxial graphene grown on SiC

“…Therefore, it is necessary to find a reliable method to determine the carrier density in particular at different temperatures. One method to obtain the carrier density in a 2DES or graphene is from the period of Shubnikov-de Haas (SdH) oscillations [11, 12]. A more general way to determine the carrier density is the classical Hall effect.…”

The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene

“…On the other hand, the μ H of carriers in the SLG/SiO 2 /Si sample was measured as 1323 cm 2 /Vs at 260 K, and its value increases monotonically with decreasing temperature from 260 to 1.8 K. At 1.8 K, the Hall mobility value reaches 1668 cm 2 /vs. This behaviour reflects the 2D character of the carriers in the single-layer graphene [16,18].…”

“…The temperature dependent behaviour of the Hall mobility (μ H ) and the sheet carrier density (N s ) of carriers was determined from the measured R xx and R xy using equation [16,18] where w and L are the width and length of the Hall bar, e is the electronic charge and B is the applied magnetic field. μ H and N s were determined under a static magnetic field of 1.0 T and temperature between the 1.8 and 260 K. The temperature dependence of the μ H and N s in the SLG/SiO 2 /Si sample is given in Figure 3.…”

“…The transport properties of graphene were studied both theoretically [9][10][11] and experimentally [12][13][14][15][16][17][18][19]. Tıraş et al [16] published Shubnikov-de Haas (SdH) measurement results for single-layer graphene on a SiC substrate. They calculate the electronic properties, such as sheet carrier density, 2D carrier density, in-plane effective mass, quantum lifetimes and power loss for single-layer graphene from the SdH oscillations.…”