Quantum interference effects in semiconductors: a bibliography

Gaylord, Thomas K.; Glytsis, Elias N.; Henderson, Gregory N.; Martin, K. P.; Walker, D.; Wilson, Daniel W.; Brennan, Kevin F.

doi:10.1109/5.92075

Cited by 22 publications

(5 citation statements)

References 212 publications

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“…With the advent of techniques for the semiconductor growth and fabrication of semiconductor nanoelectronic devices, the optics-like phenomenon [38], such as reflection, focusing, diffraction, and interference, resulting from the fact that the quantum-mechanical wave nature of electrons, become prominent in electron wave devices, thus have given rise to a field of research which is best described as ballistic electron optics in two-dimensional electron systems (2DESs) [39,40]. In 1993, Wilson et.…”

Section: Introductionmentioning

confidence: 99%

“…With the advent of techniques for the semiconductor growth and fabrication of semiconductor nanoelectronic devices, the optics-like phenomena [38], such as reflection, focusing, diffraction, and interference, have given rise to a field of research which is best described as ballistic electron optics in two-dimensional electron systems. All of these electron wave devices result from the quantum-mechanical wave nature of electrons [39,40].…”

Section: Introductionmentioning

confidence: 99%

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Electronic analogy of the Goos–Hänchen effect: a review

Chen¹,

Lu²,

Ban³

et al. 2013

J. Opt.

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Abstract. The analogies between optical and electronic Goos-Hänchen effects are established based on electron wave optics in semiconductor or graphene-based nanostructures. In this paper, we give a brief overview of the progress achieved so far in the field of electronic Goos-Hänchen shifts, and show the relevant optical analogies. In particular, we present several theoretical results on the giant positive and negative Goos-Hänchen shifts in various semiconductor or graphen-based nanostructures, their controllability, and potential applications in electronic devices, e.g. spin (or valley) beam splitters.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electronic analogy of the Goos–Hänchen effect: a review

Chen¹,

Lu²,

Ban³

et al. 2013

J. Opt.

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“…The resonant phenomena are either in one-dimensional quantum wells or two-dimensional quantum wires [11], and three-dimensional quantum dots [12]. They have been given rise much interesting and novel devices, such as negative-differential resistivity [1], photodetectors [13], laser [14], electro-absorption modulators [15], quantum interference devices [16] and etc. [17].…”

Section: Introductionmentioning

confidence: 99%

Tunable Quasistationary States in a One-dimensional Quantum Heterostructure

Jao¹,

Luo²,

Lai

2023

J. Phys.: Conf. Ser.

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In this work, we focus on the quasistationary states, lifetime, and transmittance in opened quantum wells with biased and unbiased. In order to solve the quasibound states, the complex eigenenergies are solved in our calculation model by adaptive finite element method. We have demonstrated the accuracy to exam the numerical convergence. In this case, the 1D quantum heterostructure is commonly composed of GaAs and AlxGa1-xAs. With the different applied bias, the resonant tunneling and transmittance profiles could be changed, respectively. Increasing the thickness of the outermost barrier can be prevented an electron penetrated through the barrier from the quasistationary state. This is a useful way to design easily the high-speed switch for semiconductor devices. Our results of numerical calculations are good agreement with the argument principle method approach. These results are useful and helped us to design quantum devices and quantum computations.

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“…Owing to the quantum‐mechanical wave feature of electron beams, many electronic analogies of optical phenomena, such as reflection, refraction, polarization, focusing, and collimations, have been demonstrated in two‐dimensional electron gas (2DEG) nanostructures in recent years 1–3. In particular, some of them have been exploited to realize spin‐polarized injection into the conventional semiconductors for spintronics 4, in which the spin degree of freedom of electrons is employed for device operation.…”

Section: Introductionmentioning

confidence: 99%

Spin beam splitter based on Goos–Hänchen shifts in two‐dimensional electron gas modulated by ferromagnetic and Schottky metal stripes

Huang

Zhang

et al. 2012

Physica Status Solidi (b)

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We present a theoretical study on the spin‐dependent Goos–Hänchen (GH) effect in a two‐dimensional electron gas modulated by ferromagnetic and Schottky metal (SM) stripes. The GH shifts for spin electron beams across this device are calculated with the help of the stationary phase method. It is shown that the GH shift of spin‐up beam is significantly different from that of spin‐down beam, i.e., this device shows up a considerable spin polarization effect in GH shifts of electron beams. It also is shown that both magnitude and sign of spin polarization of GH shifts are closely related to the stripe width, the magnetic strength and the gated voltage under SM stripe. These interesting properties not only provide an effective method of spin injection for spintronics application, but also give rise to a tunable spin beam splitter.

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Quantum interference effects in semiconductors: a bibliography

Cited by 22 publications

References 212 publications

Electronic analogy of the Goos–Hänchen effect: a review

Electronic analogy of the Goos–Hänchen effect: a review

Tunable Quasistationary States in a One-dimensional Quantum Heterostructure

Spin beam splitter based on Goos–Hänchen shifts in two‐dimensional electron gas modulated by ferromagnetic and Schottky metal stripes

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