Spin beam splitter based on Goos–Hänchen shifts in two‐dimensional electron gas modulated by ferromagnetic and Schottky metal stripes

Abstract

We present a theoretical study on the spin‐dependent Goos–Hänchen (GH) effect in a two‐dimensional electron gas modulated by ferromagnetic and Schottky metal (SM) stripes. The GH shifts for spin electron beams across this device are calculated with the help of the stationary phase method. It is shown that the GH shift of spin‐up beam is significantly different from that of spin‐down beam, i.e., this device shows up a considerable spin polarization effect in GH shifts of electron beams. It also is shown that both magnitude and sign of spin polarization of GH shifts are closely related to the stripe width, the magnetic strength and the gated voltage under SM stripe. These interesting properties not only provide an effective method of spin injection for spintronics application, but also give rise to a tunable spin beam splitter.

Manipulating spin beam splitter by electric field in hybrid ferromagnetic-Schottky-stripe and semiconductor nanostructure

“…The degree of the spin splitting of GH shifts can be characterized by introducing the spin polarization , where and stand for GH shifts for spin‐up and spin‐down electron beams, respectively. Figure 3 shows the corresponding spin polarization versus the incident energy E for the device presented in Fig.…”

“…This spin beam splitter () comprises a MMSN, which can be experimentally realized by depositing a FM stripe and a SM stripe in parallel configuration on the top of a semiconductor heterostructure (), as schematically depicted in Fig. 1a.…”

“…Very recently, the GH effect of the spin electron beams was investigated () in a MMSN comprising a FM stripe, a Schottky metal (SM) stripe and a semiconductor heterostructure. Such a MMSN is found to possess a rather high degree of spin polarization in GH shifts of electron beams.…”

Manipulation of Goos-Hänchen shifts in the atomic configuration of mercury via interacting dark-state resonances

“…The GH shift plays a functional role in various fields of science such as micro-optics and * Corresponding author: Hamid.R.Hamedi@gmail.com nano-optics, acoustics, quantum and plasma physics [25], and in optical heterodyne sensors, which are employed to measure refractive index, displacement, temperature, beam angle, and film thickness [26]. Different structures are employed to explore the GH shift, such as photonic crystals [27], lossless dielectric slab [28], various-level configuration systems [29][30][31][32][33][34][35], negative refractive media [36], graphene [37][38][39][40][41], the ballistic electrons in semiconductor quantum slabs or wells [42,43], and so on [44][45][46][47][48][49][50][51][52][53]. For instance, Zubairy et al [29,30] presented proposals to manipulate the Goos-Hänchen shift of a light beam via coherent control field, which is injected into a cavity configuration containing the two-level, three-level, or four-level atoms with EIT.…”

Calculations of spin-polarized Goos–Hänchen displacement in magnetically confined GaAs/Al x Ga1−x As nanostructure modulated by spin–orbit couplings

“…Subsequently, the GH displacement for spin electrons across realistic-MB MCSNs was studied by Lu et al [12] and Kong et al [13]; corresponding spatial spin splitters were put forward successfully. Since then, the spin-dependent GH effect and its application as the spin splitter in other MCSNs are reported one after another; see [14][15][16][17]. Very recently several groups [18][19][20], edified by the modern materials growth techniques such as molecular beam epitaxy (MBE) and metal-organic chemicalvapor deposition, began to explore the modulation to the spin-polarized GH displacement of electrons in MCSNs by δ-doping [21].…”