Quantum information processing with integrated silicon carbide photonics

Abstract

Color centers in wide bandgap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, and spin–photon and spin–spin entanglement, as well as the potential for scalability. Silicon carbide color centers integrated into photonic devices span a wide range of applications in quantum information processing in a material platform with quantum-grade wafer availability and advanced processing capabilities. Recent progress in emitter generation and characterization, nanofabrication, device design, and quantum optical studies has amplified the scientific interest in this platform. We provide a conceptual and quantitative analysis of the role of silicon carbide integrated photonics in three key application areas: quantum networking, simulation, and computing.

Triangular quantum photonic devices with integrated detectors in silicon carbide

“…Color centers in silicon carbide (SiC) have been a prominently studied quantum platform for applications in quantum information processing (QIP). Their unique combination of spectral homogeneity, emission at near infra-red and telecommunication wavelengths, long spin coherence, and spin-photon entangling processes offer key applications in quantum communication, simulation, computing, and sensing [1][2][3][4][5][6][7].…”

Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware

“…Color centers are defects in wide band gap single-crystal materials that can emit single-photons and spin-entangled photons which act as quantum information carriers. Silicon carbide (SiC) is one of the most notable quantum hardware platforms since it hosts a collection of optically addressable color centers 1 with long spin coherence times [2][3][4][5] , excellent brightness 6 , nuclear spins 7,8 , and telecommunication wavelength emissions 1,9 , which are suitable properties for quantum information processing. On top of that, SiC has a large bandgap, high thermal conductivity, strong second-order nonlinearity, mechanical stability, and mature industrial presence 10,11 making it a reliable platform for a variety of applications.…”

“…On top of that, SiC has a large bandgap, high thermal conductivity, strong second-order nonlinearity, mechanical stability, and mature industrial presence 10,11 making it a reliable platform for a variety of applications. Recently, photonics in triangular geometry has come into focus for increasing the efficiency of such solid-state quantum emitter processes 5,9,12,13 . Triangular cross-section waveguide results from a bulk nanofabrication process called the angle-etch method that has been successfully implemented in both diamond 12,14 and SiC 5,13 .…”

“…Triangular cross-section waveguide results from a bulk nanofabrication process called the angle-etch method that has been successfully implemented in both diamond 12,14 and SiC 5,13 . Previous fabrication processes were challenged by various imperfections that deteriorated the optical properties of the color centers or limited the robustness of the nanophotonic devices 9 . On the other hand, triangular geometry offers emitter implantation in bulk substrates (free-standing waveguides), which ensures high-quality color centers with better coupling and can pave the way for efficient quantum photonic hardware.…”

“…Advancement of quantum information technology greatly depends on the realization of robust quantum networks 9,15,16 and generation of arbitrary all-photonic cluster states [17][18][19] which, in color center platforms, are limited by the low photon collection efficiency. Color centers can have both transverse electric (TE) and transverse magnetic (TM) optical dipole-like emissions with a solid angle covering 4π.…”