Triangular quantum photonic devices with integrated detectors in silicon carbide

Abstract

Triangular cross-section SiC photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission in a triangular cross-section SiC waveguide by introducing a photonic crystal mirror on its one side and a superconducting nanowire single photon detector (SNSPD) on the other. Our modeled triangular cross-section devices with a randomly positioned emitter have a maximum coupling efficiency of 89 % into the desired optical mode and a high coupling efficiency (> 75 %) in more than half of the configurations. For the first time, NbTiN thin films were sputtered on 4H-SiC and the electrical and optical properties of the thin films were measured. We found that the transport properties are similar to the case of NbTiN on SiO2 substrates, while the extinction coefficient is up to 50 % higher for 1680 nm wavelength. Finally, we performed Finite-Difference Time-Domain simulations of triangular cross-section waveguide integrated with an SNSPD to identify optimal nanowire geometries for efficient detection of light from TE and TM polarized modes.

Triangular cross-section beam splitters in silicon carbide for quantum information processing

“…[7][8][9] Successful implementation of such quantum mesh photonic hardware requires efficient single-photon generation, manipulation, entanglement, and detection. [10][11][12] Beamsplitters (BS) play a crucial role in on-chip photonic QIP circuits for generating multiphoton correlation [8,13] and can be used to realize several important operations like entanglement generation and single-photon interferometry (Hong-Ou-Mandel and Hanbury Brown-Twiss). Moreover, a universal quantum computer with linear optical quantum computing protocols has been proposed using BS, phase shifters, single-photon sources, and photo-detectors.…”

“…Compared to the other non-traditional processing techniques [19][20][21] used for fabricating undercut devices, angle etching method, [16,18,22] which produces triangular cross-section and undercut photonic devices, is promising for wafer-scale production. [23] Performance of a variety of such triangular cross-section photonic structures in 4H-SiC was recently examined, [12,18,24,25] and have proven favorable for QIP applications.…”

Site‐Selective Enhancement of Superconducting Nanowire Single‐Photon Detectors via Local Helium Ion Irradiation

“…[ 7 ] Moreover, their waveguide‐integrated form is a key component for photonic integrated circuits. [ 18–22 ]…”

“…[7] Moreover, their waveguide-integrated form is a key component for photonic integrated circuits. [18][19][20][21][22] Since recently, SNSPDs also find application in fields such as astronomy, [23] dark matter detection, [24] and particle detection. [25,26] However, these applications typically require large detector arrays or even an SNSPD camera, which to date turns out to be challenging due to the necessary readout and homogeneity within an ensemble of the order of hundreds to thousands of detectors.…”

Development of Meta‐Chemical Surface by Dip‐Pen Nanolithography for Precise Electrochemical Lead Sensing

“…Scanning Probe Lithography techniques such as dip-pen nanolithography (DPN) have emerged as a strong technique for DOI: 10.1002/smtd.202301118 patterning or writing a desired structure over a flat substrate using a modified atomic force microscope (AFM). [1][2][3][4][5][6] It became quite popular after 1999 when Mirkin et al [2] coined the term Dip-Pen Nanolithography (DPN). It is important to note that in the early stage of DPN, patterning was processed with a probe with only a single cantilever, therefore, inherently low throughput.…”