2016
DOI: 10.1021/jacs.6b10681
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Quantum Dot/Siloxane Composite Film Exceptionally Stable against Oxidation under Heat and Moisture

Abstract: We report on the fabrication of a siloxane-encapsulated quantum dot (QD) film (QD-silox film), which exhibits stable emission intensity for over 1 month even at elevated temperature and humidity. QD-silox films are solidified via free radical addition reaction between oligosiloxane resin and ligand molecules on QDs. We prepare the QD-oligosiloxane resin by sol-gel condensation reaction of silane precursors with QDs blended in the precursor solution, forgoing ligand-exchange of QDs. The resulting QD-oligosiloxa… Show more

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Cited by 75 publications
(79 citation statements)
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“…Enhanced PL QY of CdSe/ZnS QDs by passivating trap states with the help of adsorbed water molecules has been reported in previous studies . From this standpoint, both increased radiative (from 34.4 to 43.2 ns) and disappeared delayed recombination components of the QD/siloxane (methacryl) film indicate reduced trap states after aging which correspond with its enhanced PL QY.…”
Section: Resultssupporting
confidence: 63%
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“…Enhanced PL QY of CdSe/ZnS QDs by passivating trap states with the help of adsorbed water molecules has been reported in previous studies . From this standpoint, both increased radiative (from 34.4 to 43.2 ns) and disappeared delayed recombination components of the QD/siloxane (methacryl) film indicate reduced trap states after aging which correspond with its enhanced PL QY.…”
Section: Resultssupporting
confidence: 63%
“…Both films are fabricated via three steps. First, QDs are dispersed in the mixture of silane precursors, which are MPTS/DPSD and ECTS/DPSD, separately, forgoing ligand‐exchange of QDs . During this step, hydrophobic interaction between oleic acid (OA, surface ligand on QDs) and functional groups of the silane precursors triggers encapsulation of the QDs .…”
Section: Resultsmentioning
confidence: 99%
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