Quantum dot semiconductor lasers with optical feedback

Huyet, Guillaume; O’Brien, D.; Hegarty, S. P.; McInerney, John G.; Uskov, Alexander V.; Bimberg, D.; Ribbat, C.; Ustinov, V. M.; Zhukov, A. E.; Mikhrin, S. S.; Kovsh, A. R.; White, J.K.; Hinzer, Karin; SpringThorpe, A. J.

doi:10.1002/pssa.200303971

Cited by 69 publications

(31 citation statements)

References 33 publications

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“…In lifetime tests at 1.0 W and 1.5 W and 50°C heat sink temperature, no aging of these lasers within 3000 h could be observed [1][2][3]. QD lasers, whatever their application in systems is, present thus the most energy-efficient laser sources known.…”

Section: Many Qds In Semiconductor Lasersmentioning

confidence: 98%

“…Suppression of filamentation for edge-emitting QD lasers emitting in the 1100-1300-nm range for the transverse ground mode at stripe widths up to 9 μm were observed to lead to superior beam quality (lower M 2 ) and increased coupling efficiency into fibers, another early discovery [1][2][3].…”

Section: Many Qds In Semiconductor Lasersmentioning

confidence: 98%

“…Vanishing FSS of the exciton state is essential to achieve entanglement, which is possible by size tuning (see Figure 2.7 in Refs. [1][2][3]) but difficult to achieve for QDs grown on (001) substrates. Applying external electrical fields can help to surmount this barrier to achieve FSS = 0 meV.…”

Section: Single Qds As Q-bit or Entangled Photon Emittersmentioning

confidence: 99%

“…One of the first important subsequent discoveries was the observation of efficient recombination and lasing at 1.3 μm of InAs QDs inserted in GaAs, a wavelength previously only accessible by InP-based lasers, showing the disadvantage of a large temperature dependence of the threshold current density. Emission wavelengths beyond 1.5 μm were demonstrated for devices grown on metamorphic buffers [1][2][3]. Important improvements of photonic device properties were based on the introduction of dot-in-a-well structures and p-type doping, leading to temperature independence of the threshold current density up to elevated temperatures of more than 70°C.…”

Section: Many Qds In Semiconductor Lasersmentioning

confidence: 99%

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Semiconductor nanostructures for flying q-bits and green photonics

Bimberg

2018

Nanophotonics

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Breakthroughs in nanomaterials and nanoscience enable the development of novel photonic devices and systems ranging from the automotive sector, quantum cryptography to metropolitan area and access networks. Geometrical architecture presents a design parameter of device properties. Self-organization at surfaces in strained heterostructures drives the formation of quantum dots (QDs). Embedding QDs in photonic and electronic devices enables novel functionalities, advanced energy efficient communication, cyber security, or lighting systems. The recombination of excitons shows twofold degeneracy and Lorentzian broadening. The superposition of millions of excitonic recombinations from QDs in real devices leads to a Gaussian envelope. The material gain of QDs in lasers is orders of magnitude larger than that of bulk material and decoupled from the index of refraction, controlled by the properties of the carrier reservoir, thus enabling independent gain and index modulation. The threshold current density of QD lasers is lowest of all injection lasers, is less sensitive to defect generation, and does not depend on temperature below 80°C. QD lasers are hardly sensitive to back reflections and exhibit no filamentation. The recombination from single QDs inserted in light emitting diodes with current confining oxide apertures shows polarized single photons. Emission of ps pulses and date rates of 10 10 + bit upon direct modulation benefits from gain recovery within femtoseconds. Repetition rates of several 100 GHz were demonstrated upon mode-locking. Passively mode-locked QD lasers generate hat-like frequency combs, enabling Terabit data transmission. QD-based semiconductor optical amplifiers enable multi-wavelength amplification and switching and support multiple modulation formats.Keywords: quantum dot growth and electronic properties; quantum dot lasers; ultra-fast lasers and amplifiers; single q-bit emitters.

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Section: Many Qds In Semiconductor Lasersmentioning

confidence: 98%

Section: Many Qds In Semiconductor Lasersmentioning

confidence: 98%

Section: Single Qds As Q-bit or Entangled Photon Emittersmentioning

confidence: 99%

Section: Many Qds In Semiconductor Lasersmentioning

confidence: 99%

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Semiconductor nanostructures for flying q-bits and green photonics

Bimberg

2018

Nanophotonics

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“…For the evaluation of the Coulomb matrix elements M abcd and the scattering integrals in (5), we use the approach of [7] and [12]: For a WL extended in the x-y plane, the wave function for the whole QD-WL system can be separated into the inplane component ϕ …”

Section: Coulomb Scattering Ratesmentioning

confidence: 99%

Coulomb Damped Relaxation Oscillations in Semiconductor Quantum Dot Lasers

Malić

Bormann

Hövel

et al. 2007

IEEE J. Select. Topics Quantum Electron.

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Abstract-We present a theoretical simulation of the turn-on dynamics of InAs/GaAs quantum dot semiconductor lasers driven by electrical current pulses. Our approach goes beyond standard phenomenological rate equations. It contains microscopically calculated Coulomb scattering rates, which describe Auger transitions between quantum dots and the wetting layer. In agreement with the experimental results, we predict a strong damping of relaxation oscillations on a nanosecond time scale. We find a complex dependence of the Coulomb scattering rates on the wetting layer electron and hole densities, and we show their crucial importance for the understanding of the turn-on dynamics of quantum dot lasers.Index Terms-Coulomb scattering rates, quantum dot (QD) lasers, relaxation oscillations.

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High speed nanophotonic devices based on quantum dots

Bimberg

Fiol

Kuntz

et al. 2006

Physica Status Solidi (a)

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For InAs‐GaAs based quantum dot lasers emitting at 1300 nm digital modulation with bit error rates below 10–11 at –2 dBm receiver power is demonstrated. Error rates of 10–9 or better are realized between 23 °C and 70 °C without current adjustment. Passive and hybrid mode‐locked QD lasers are shown to generate optical pulses with repetition frequencies up to 80 GHz and 40 GHz, respectively, with an ultra‐short minimum pulse length of 710 fs at 20 GHz. The minimum root mean square jitter of 40 GHz hybrid mode‐locked pulses is found to be 400 fs with a corresponding pulse width of 4 ps. Quantum dot based 1.3 µm fiber‐coupled amplifier modules show 40 Gb/s operation with bit error rates below 10–11. Amplifier chip gain up to 26 dB is demonstrated. 710 fs pulses are amplified without pulse broadening. For all devices we use deeply etched narrow ridge waveguide structures which show excellent current and optical confinement. Along with suppressed beam filamentation of the fundamental mode, a low α ‐factor and strongly reduced sensitivity to optical feedback our results demonstrate that QD laser performance is now comparable or even superior to quantum well lasers. These achievements became possible due to systematic devel‐opment of self‐organized growth technologies. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Quantum dot semiconductor lasers with optical feedback

Cited by 69 publications

References 33 publications

Semiconductor nanostructures for flying q-bits and green photonics

Semiconductor nanostructures for flying q-bits and green photonics

Coulomb Damped Relaxation Oscillations in Semiconductor Quantum Dot Lasers

High speed nanophotonic devices based on quantum dots

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