2006
DOI: 10.1002/pssa.200622488
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High speed nanophotonic devices based on quantum dots

Abstract: For InAs‐GaAs based quantum dot lasers emitting at 1300 nm digital modulation with bit error rates below 10–11 at –2 dBm receiver power is demonstrated. Error rates of 10–9 or better are realized between 23 °C and 70 °C without current adjustment. Passive and hybrid mode‐locked QD lasers are shown to generate optical pulses with repetition frequencies up to 80 GHz and 40 GHz, respectively, with an ultra‐short minimum pulse length of 710 fs at 20 GHz. The minimum root mean square jitter of 40 GHz hybrid mode‐lo… Show more

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Cited by 63 publications
(21 citation statements)
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“…These lasers are very promising for local area networks or optical clocks operating at 1.3 μm. Due to the presence of spontaneous emission and other noise sources, pulses emitted by passively ML lasers usually exhibit a considerable timing jitter can be of the order of 10 ps for 40-GHz ML lasers [3]. An effective method for suppressing this jitter down to hundreds of femtoseconds is based on hybrid mode locking [3], [4].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…These lasers are very promising for local area networks or optical clocks operating at 1.3 μm. Due to the presence of spontaneous emission and other noise sources, pulses emitted by passively ML lasers usually exhibit a considerable timing jitter can be of the order of 10 ps for 40-GHz ML lasers [3]. An effective method for suppressing this jitter down to hundreds of femtoseconds is based on hybrid mode locking [3], [4].…”
Section: Introductionmentioning
confidence: 99%
“…Due to the presence of spontaneous emission and other noise sources, pulses emitted by passively ML lasers usually exhibit a considerable timing jitter can be of the order of 10 ps for 40-GHz ML lasers [3]. An effective method for suppressing this jitter down to hundreds of femtoseconds is based on hybrid mode locking [3], [4]. In hybrid ML lasers, the reverse bias applied to the saturable absorber (SA) section is modulated at the frequency f M close to the pulse repetition frequency f P of the free-running passively ML laser [4]- [9].…”
Section: Introductionmentioning
confidence: 99%
“…And indeed, there is not a single highest-speed (160 Gb/s and above) wavelength conversion or regeneration experiment with an SOA-MZI configuration (There are 160 Gb/s to 40 Gb/s demultiplexing experiments with SOA-MZIs -but then the repetition rate is 40 GHz only). 2.2 QD-SOA Self-assembled quantum dot (QD) semiconductor optical amplifiers (SOA) are another promising choice for building all-optical devices for signal processing with sub-l0 ps response times [5]. Here, we consider InAs/GaAs QD SOA as they exhibit low sensitivity with respect to temperature and show potential for uncooled operation at 1.3 ptm.…”
Section: Bulk Semiconductor Optical Amplifier Materials Systemmentioning
confidence: 99%
“…And the surface morphology contribution to the optical properties is significant. [14][15][16] The composition profiles depend strongly on the morphological features, strain ratio and growth environment. Therefore, it is very necessary to obtain the exact equilibrium composition profiles.…”
Section: Introductionmentioning
confidence: 99%