Quantum dissipation with conditional wave functions: Application to the realistic simulation of nanoscale electron devices

Colomés, Enrique; Zhan, Zhen; Marian, Damiano; Oriols, X.

doi:10.1103/physrevb.96.075135

Cited by 25 publications

(46 citation statements)

References 52 publications

(48 reference statements)

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“…We thank Xavier Cartoixà, David Jiménez and Weiqing Zhou for helpful discussion. The authors acknowledge funding from Fondo Europeo de Desarrollo Regional (FEDER), the "Ministerio de Ciencia e Innovación" through the Spanish Project TEC2015-67462- In this Appendix, we detail how we define the wave nature of electrons in graphene transistors by using the conditional bispinor wave functions in the BITLLES simulator 27,[30][31][32][33] . Graphene dynamics (as well as for other linear band structure materials) are given by the Dirac equation, and not by the usual Schrödinger one, which is valid for parabolic bands.…”

Section: Acknowledgementmentioning

confidence: 99%

“…The bispinor in Eq. (20) can be considered as a Bohmian conditional "wave function" for the electron, a unique tool of Bohmian mechanics that allows to tackle the many-body and measurement problems in a computationally efficient way 26,27 . The Bohmian ontology allows to describe the (wave and particle) properties of electrons along the device independently of the fact of being measured or not.…”

Section: Acknowledgementmentioning

confidence: 99%

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Time-dependent quantum Monte Carlo simulation of electron devices with two-dimensional Dirac materials: A genuine terahertz signature for graphene

et al. 2019

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An intrinsic electron injection model for linear band two-dimensional (2D) materials, like graphene, is presented and its coupling to a recently developed quantum time-dependent Monte Carlo simulator for electron devices, based on the use of stochastic Bohmian conditional wave functions, is explained. The simulator is able to capture the full (DC, AC, transient and noise) performance of 2D electron devices. In particular, we demonstrate that the injection of electrons with positive and negative kinetic energies is mandatory when investigating high frequency performance of linear band materials with Klein tunneling, while traditional models dealing with holes (defined as the lack of electrons) can lead to unphysical results. We show that the number of injected electrons is bias-dependent, implying that an extra charge is required to get self-consistent results. Interestingly, we provide a successful comparison with experimental DC data. Finally, we predict that a genuine high-frequency signature due to a roughly constant electron injection rate in 2D linear band electron devices (which is missing in 2D parabolic band ones) can be used as a band structure tester.

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Section: Acknowledgementmentioning

confidence: 99%

Section: Acknowledgementmentioning

confidence: 99%

Time-dependent quantum Monte Carlo simulation of electron devices with two-dimensional Dirac materials: A genuine terahertz signature for graphene

et al. 2019

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“…It was demonstrated by Wiseman and Gambetta that a SSEtype solution of an open system with a physical interpretation of the monitored value as the output of a continuous measurement has to be based on Bohm mechanics Wiseman 2002, Gambetta andWiseman 2003). A practical implementation of this type of computational approach showing the technical advantage of the Bohm approach in some cases is explained in a recent work of one of the authors by using a Bohm conditional wave functions (Oriols 2007, Marian, Zanghi et al 2016, Colomés, Zhan et al 2017. A general discussion of the approach to open quantum systems can be found in Ferry 1980a, Barker andFerry 1980b).…”

Section: Particle and Displacement Currents In Quantum Systemsmentioning

confidence: 99%

Dynamics of Current, Charge and Mass

Eisenberg

Oriols

Ferry

2017

Computational and Mathematical Biophysics

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Electricity plays a special role in our lives and life. Equations of electron dynamics are nearly exact and apply from nuclear particles to stars. These Maxwell equations include a special term the displacement current (of vacuum). Displacement current allows electrical signals to propagate through space. Displacement current guarantees that current is exactly conserved from inside atoms to between stars, as long as current is defined as Maxwell did, as the entire source of the curl of the magnetic field. We show how the Bohm formulation of quantum mechanics allows easy definition of current. We show how conservation of current can be derived without mention of the polarization or dielectric properties of matter. Matter does not behave the way physicists of the 1800's thought it does with a single dielectric constant, a real positive number independent of everything. Charge moves in enormously complicated ways that cannot be described in that way, when studied on time scales important today for electronic technology and molecular biology. Life occurs in ionic solutions in which charge moves in response to forces not mentioned or described in the Maxwell equations, like convection and diffusion. Classical derivations of conservation of current involve classical treatments of dielectrics and polarization in nearly every textbook. Because real dielectrics do not behave in a classical way, classical derivations of conservation of current are often distrusted or even ignored. We show that current is conserved exactly in any material no matter how complex the dielectric, polarization or conduction currents are. We believe models, simulations, and computations should conserve current on all scales, as accurately as possible, because physics conserves current that way. We believe models will be much more successful if they conserve current at every level of resolution, the way physics does.Comment: Version 4 slight reformattin

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“…[1] Moore, G. E. Cramming more components onto integrated circuits. Electronics, 38, 114-117 (1965 times (for more details, see [28]).…”

Section: Discussionmentioning

confidence: 99%

Noise and Charge Discreteness as Ultimate Limit for the THz Operation of Ultra-Small Electronic Devices

Colomés

Oriols

Matéos

et al. 2018

2018 Spanish Conference on Electron Devices (CDE)

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To manufacture faster electron devices, the industry has entered into the nanoscale dimensions and Terahertz (THz) working frequencies. The discrete nature of the few electrons present simultaneously in the active region of ultra-small devices generate unavoidable fluctuations of the current at THz frequencies. The consequences of this noise remain unnoticed in the scientific community because its accurate understanding requires dealing with consecutive multi-time quantum measurements. Here, a modeling of the quantum measurement of the current at THz frequencies is introduced in terms of quantum (Bohmian) trajectories. With this new understanding, we develop an analytic model for THz noise as a function of the electron transit time and the sampling integration time, which finally determine the maximum device working frequency. The model is confirmed by either semi-classical or full-quantum time-dependent Monte Carlo simulations. All these results show that intrinsic THz noise increases unlimitedly when the volume of the active region decreases. All attempts to minimize the low signal-to-noise ratio of these ultra-small devices to get effective THz working frequencies are incompatible with the basic elements of the scaling strategy. One can develop THz electron devices, but they cannot have ultra-small dimensions. Or, one can fabricate ultra-small electron devices, but they cannot be used for THz working frequencies.

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Quantum dissipation with conditional wave functions: Application to the realistic simulation of nanoscale electron devices

Cited by 25 publications

References 52 publications

Time-dependent quantum Monte Carlo simulation of electron devices with two-dimensional Dirac materials: A genuine terahertz signature for graphene

Time-dependent quantum Monte Carlo simulation of electron devices with two-dimensional Dirac materials: A genuine terahertz signature for graphene

Dynamics of Current, Charge and Mass

Noise and Charge Discreteness as Ultimate Limit for the THz Operation of Ultra-Small Electronic Devices

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