Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution Coefficients

Vechten, J. A. Van

doi:10.1103/physrevb.7.1479

Cited by 462 publications

(140 citation statements)

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“…This rule is also valid for GaN growth, where the GaN melting point lies somewhere between 2540 K (experimentally determined for 6 GPa [23]) and 2800 K (theoretically calculated [24]), and the optimum growth temperature used in MOVPE is in the range 1050-1100 1C (1320-1370 K). On a microscopic scale, at T=0.5 Á T M atomic kinks start to become active, i.e.…”

Section: Growth Conditions For Pambementioning

confidence: 99%

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Skierbiszewski

Wasilewski

Grzegory

et al. 2009

Journal of Crystal Growth

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Nitride-based laser diodes by plasma-assisted MBE-From violet to green emission Skierbiszewski, C.; Wasilewski, Z.R.; Grzegory, I.; Porowski, S.Contact us / Contactez nous: nparc.cisti@nrc-cnrc.gc.ca. We present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is ammonia free, and nitrogen for growth is activated by RF plasma source from nitrogen molecules. The recent demonstration of CW blue InGaN LDs has opened a new perspective for PAMBE in optoelectronics. The LDs were fabricated on low threading dislocation density (TDD) bulk GaN substrates at low growth temperatures 600-700 1C.In this work, we describe the nitride growth fundamentals, the influence of the TDD on the layer morphology, the peculiarities of InGaN growth as well as properties of LEDs and LDs made by PAMBE.

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Section: Growth Conditions For Pambementioning

confidence: 99%

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Skierbiszewski

Wasilewski

Grzegory

et al. 2009

Journal of Crystal Growth

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“…Bulk GaN crystals, however, are difficult to grow from its stoichiometric melt either by Czochralski or Bridgman method due to its extremely high decomposition pressures [5] and high theoretical melting temperature [6]. Attempts have been tried to grow the bulk crystals by the sublimation method [7], the hydride vapor-phase epitaxy (HVPE) method [8], the high-pressure solution growth method [9] and the flux method using sodium [10].…”

Section: Introductionmentioning

confidence: 99%

Growth of bulk GaN single crystals by flux method

Chen

2005

Science and Technology of Advanced Materials

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The progresses on the growth of bulk GaN crystals by the flux method in our research group are reported in this review. The research work is mainly focused on the ternary system Li-Ga-N. The phase relations are constructed by the calculation of phase diagram (CALPHAD) technique based on the optimized thermodynamic data of the corresponding binary systems Li-N, Li-Ga and Ga-N. There exists a two-phase region of liquidCGaN at above 750 8C. The well-crystallized, transparent GaN plate-like crystals up to a size of 4 mm can be grown from the Li-Ga-N system under pressures of 1-2 N 2 atmospheres. The yield and quality of the GaN crystals depend on the composition of the starting materials, the growth temperature, the cooling rate, and the position of Li 3 N in the crucible. Efforts are still needed to further enlarge the size of crystals. q

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“…Melting of large single crystals was indicated by a change of the shape and microstructure. In the case of small crystals the appearance of a liquid phase in the system was fixed either by the formation of a strong monolith sample with a pronounced laminar structure after quenching (samples, which did not achieve the melting temperature, remained brittle compacts of relatively large crystals) or in situ from a jump of the cell electrical resistance caused by a change of conductivity type from the semiconducting (solid SiC) to the metal one (melt) [3,4,10]. In the second case boron nitride capsules were not used and the sample was in a direct contact with a graphite heater.…”

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confidence: 99%