Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Skierbiszewski, C.; Wasilewski, Z. R.; Grzegory, I.; Porowski, S.

doi:10.1016/j.jcrysgro.2008.12.040

Cited by 50 publications

(43 citation statements)

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“…Wurtzite InGaN quantum wells (QWs) are a very important gain medium for fabricating optoelectronic devices, such as near ultraviolet, blue, and green light emitting diodes (LEDs) and laser diodes (LDs) [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The growth of InGaN QWs along the [0001] direction leads to a QW system with a very strong quantum confined Stark effect due to the large internal electric fields which result from discontinuities in spontaneous and piezoelectric polarization at QW heterointerfaces [15,16].…”

Section: Introductionmentioning

confidence: 99%

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

et al. 2013

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It is shown that in polar InGaN QWs emitting in the blue-green spectral region a Stokes shift between spontaneous emission (SE) and optical transition observed in contactless electroreflectance (CER) spectrum (absorptionlike technique) can be observed even at room temperature, despite the fact that the SE is not associated with localized states. Time resolved photoluminescence measurements clearly confirm that the SE is strongly localized at low temperatures whereas at room temperature the carrier localization disappears and the SE can be attributed to the fundamental transition in this QW. The Stokes shift is observed in this QW system because of the large built-in electric field, i.e., the CER transition is a superposition of all optical transitions with non-zero electron-hole overlap integrals and, therefore, the energy of this transition does not correspond to the fundamental transition of InGaN QW. Lasing from this QW has been observed at the wavelength of 475 nm, whereas the SE was observed at 500 nm. The 25 nm shift between the lasing and SE is observed because of a screening of the built-in electric field by photogenerated carriers. However, our analysis shows that the built-in electric field inside the InGaN QW region is not fully screened under the lasing conditions.

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Section: Introductionmentioning

confidence: 99%

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

et al. 2013

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“…The decrease in electron mobility with decreasing T G is in agreement with mobility being dominated by dislocation and impurity scattering events. Compensating effects in GaN due to high carrier concentrations are expected in the range of 10 18 cm À3 to 10 19 cm À3 .…”

Section: Resultsmentioning

confidence: 99%

“…However, when using the Ga-rich growth window, molecular beam epitaxygrown GaN has shown promising results. [8][9][10] In this work, we studied the impact of Si and O impurities on the unintentional n-type background doping concentration in GaN layers grown under Ga-rich conditions by plasma-assisted molecular beam epitaxy (MBE). Semi-insulating SiC substrates were used for all samples.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Si and O Donor Impurities in Unintentionally Doped MBE-Grown GaN on SiC(0001) Substrate

Tingberg

Ive

Larsson

2017

Journal of Elec Materi

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We have investigated the unintentional n-type background doping in GaN(0001) layers grown on semi-insulating 4H-SiC(0001) substrate by plasma-assisted molecular beam epitaxy under Ga-rich conditions at growth temperatures from 780°C and 900°C. All layers exhibited very smooth surface morphology with monolayer steps as revealed by atomic force microscopy. Hall-effect measurements showed that the sample grown at 900°C had carrier concentration of 9.8 9 10 17 cm À3 while the sample grown at 780°C had resistivity too high to obtain reliable measurements. Secondary-ion mass spectroscopy revealed O and Si concentrations of <10 17 cm À3 in the sample grown at 900°C but >10 17 cm À3 in the sample grown at 780°C. The trend for the atomic concentrations of O and Si, which are common donor impurities in GaN, was thus contrary to the trend of the carrier concentration. The fullwidth at half-maximum for x-ray rocking curves obtained across the GaN(0002) and GaN(10 15) reflections for the sample grown at 900°C was 62 arcsec and 587 arcsec, respectively. The half-width increased with decreasing growth temperature. The atomic concentrations of O and Si are too low to account for the unintentional background doping levels. A possible explanation proposed in early reports for the background doping is N-vacancies.

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“…Very recently, green LDs at 500-530 nm have been demonstrated in nitride-based structures grown by metal organic vapour phase epitaxy (MOVPE) either on polar, semi-polar and non-polar substrate orientations [1][2][3][4][5]. MOVPE is a leading technology in the field of nitride structures for optoelectronic devices [1,2]; however, the progress in understanding the new growth mechanism for nitrides in plasma assisted molecular beam epitaxy (PAMBE) has led to the demonstration of blue-violet laser diodes [6,7], which in turn has renewed interest in MBE technology. For ammonia-free PAMBE, the growth mechanism is entirely different from that in MOVPE and allows the growth of device-quality nitride structures at temperatures lower by 300 °C versus those used in MOVPE [6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…MOVPE is a leading technology in the field of nitride structures for optoelectronic devices [1,2]; however, the progress in understanding the new growth mechanism for nitrides in plasma assisted molecular beam epitaxy (PAMBE) has led to the demonstration of blue-violet laser diodes [6,7], which in turn has renewed interest in MBE technology. For ammonia-free PAMBE, the growth mechanism is entirely different from that in MOVPE and allows the growth of device-quality nitride structures at temperatures lower by 300 °C versus those used in MOVPE [6][7][8][9][10][11]. Therefore, it is highly interesting whether PAMBE can be useful for high In content structures required for true blue and green emitters.…”

Section: Introductionmentioning

confidence: 99%

InAlGaN laser diodes grown by plasma assisted molecular beam epitaxy

Skierbiszewski¹,

Siekacz²,

Turski³

et al. 2011

Lith. J. Phys.

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We present recent progress in the growth of nitride-based laser diodes (lDs) made by plasma assisted molecular beam epitaxy (PAMBE). This technology is ammonia-free, and nitrogen for the growth is activated by RF plasma source from nitrogen molecules. The demonstration of continuous wave blue-violet InGaN lDs has opened a new perspective for PAMBE in optoelectronics. We demonstrate the laser diodes grown by PAMBE operating at the range from 410 nm to 455 nm. The key factors which allow us to extend the lasing wavelength to 455 nm are (a) improvements in the growth of InGaN quantum wells with high nitrogen flux in PAMBE, and (b) design of the laser diode structure. We also report on optically pumped lasing at 501 nm on InGaN laser structures which show that there are no intrinsic limitations in PAMBE technology for the growth of green lDs.

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Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Cited by 50 publications

References 50 publications

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Investigation of Si and O Donor Impurities in Unintentionally Doped MBE-Grown GaN on SiC(0001) Substrate

InAlGaN laser diodes grown by plasma assisted molecular beam epitaxy

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