Abstract:We present recent progress in the growth of nitride-based laser diodes (lDs) made by plasma assisted molecular beam epitaxy (PAMBE). This technology is ammonia-free, and nitrogen for the growth is activated by RF plasma source from nitrogen molecules. The demonstration of continuous wave blue-violet InGaN lDs has opened a new perspective for PAMBE in optoelectronics. We demonstrate the laser diodes grown by PAMBE operating at the range from 410 nm to 455 nm. The key factors which allow us to extend the lasing … Show more
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