Quantum Confinement Effects in Transferrable Silicon Nanomembranes and Their Applications on Unusual Substrates

Jang, Hee-Chang; Lee, Wonho; Won, Sang Min; Ryu, Seoung Yoon; Lee, Donghun; Koo, Jae Bon; Ahn, Seong Deok; Yang, Cheol‐Woong; Jo, Moon Ho; Cho, Jeong Ho; Rogers, John A.; Ahn, Juhyeon

doi:10.1021/nl403251e

Cited by 49 publications

(55 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Additional processing, based on sequential cycles of oxidation and etching, can yield ultrathin Si NMs, with thicknesses ranging from 1.4 to 10 nm. 61 Exceptionally thin, flexible devices are possible in this way, when combined with self-assembled monolayers, 2D materials and other ultrathin constructs. Transport properties can be influenced by the thicknesses in this regime.…”

Section: Bottom-up Approachesmentioning

confidence: 99%

Inorganic semiconducting materials for flexible and stretchable electronics

et al. 2017

View full text Add to dashboard Cite

Recent progress in the synthesis and deterministic assembly of advanced classes of single crystalline inorganic semiconductor nanomaterial establishes a foundation for high-performance electronics on bendable, and even elastomeric, substrates. The results allow for classes of systems with capabilities that cannot be reproduced using conventional wafer-based technologies. Specifically, electronic devices that rely on the unusual shapes/forms/constructs of such semiconductors can offer mechanical properties, such as flexibility and stretchability, traditionally believed to be accessible only via comparatively low-performance organic materials, with superior operational features due to their excellent charge transport characteristics. Specifically, these approaches allow integration of high-performance electronic functionality onto various curvilinear shapes, with linear elastic mechanical responses to large strain deformations, of particular relevance in bio-integrated devices and bio-inspired designs. This review summarizes some recent progress in flexible electronics based on inorganic semiconductor nanomaterials, the key associated design strategies and examples of device components and modules with utility in biomedicine.

show abstract

Section: Bottom-up Approachesmentioning

confidence: 99%

Inorganic semiconducting materials for flexible and stretchable electronics

et al. 2017

View full text Add to dashboard Cite

show abstract

“…24 The wider band gaps of the Si nanomaterials can be attributed to the quantum confinement effect. 25,26 The results of PL analysis, which is Figure 5 Tauc plots of (a) the SiNPs and (b) SiNS-650 (inset: UV-Vis diffuse reflectance spectra). UPS spectra of (c) the SiNPs and (d) SiNS-650 (inset: full-scan UPS spectrum).…”

Section: Synthesis Of Mesoporous Silicon Nanosheets From Natural Claymentioning

confidence: 99%

All-in-one synthesis of mesoporous silicon nanosheets from natural clay and their applicability to hydrogen evolution

et al. 2016

View full text Add to dashboard Cite

Silicon nanosheets have attracted much attention owing to their novel electronic and optical properties and compatibility with existing silicon technology. However, a cost-effective and scalable technique for synthesizing these nanosheets remains elusive. Here, we report a novel strategy for producing silicon nanosheets on a large scale through the simultaneous molten-salt-induced exfoliation and chemical reduction of natural clay. The silicon nanosheets thus synthesized have a high surface area, are ultrathin (~5 nm) and contain mesoporous structures derived from the oxygen vacancies in the clay. These advantages make the nanosheets a highly suitable photocatalyst with an exceptionally high activity for the generation of hydrogen from a water-methanol mixture. Further, when the silicon nanosheets are combined with platinum as a cocatalyst, they exhibit high activity in KOH (15.83 mmol H 2 per s per mol Si) and excellent photocatalytic activity with respect to the evolution of hydrogen from a water-methanol mixture (723 μmol H 2 per h per g Si).

show abstract

“…1). Today, these ultrathin silicon channels ( 22 ) are used as fully depleted transistors to drive the current generation of low-power digital electronics ( 23 ). The CS-FET sensors operate at room temperature and are chemically gated with a chemical-sensitive layer, which upon exposure to a target gas, induces a channel threshold voltage shift.…”

Section: Introductionmentioning

confidence: 99%