Quantum confinement effects in strained silicon-germanium alloy quantum wells

Xiao, X.; C, Liu; Sturm, James C.; Lenchyshyn, L. C.; Thewalt, M. L. W.; Gregory, R. B.; Fejes, Peter

doi:10.1063/1.107061

Cited by 69 publications

(12 citation statements)

References 21 publications

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“…These PL spectra were similar to those from bulk Si 1−x Ge x , except that transition energies were lower due to strain 101 and quantum confinement effects for very thin layers. 102 Accurate values for the strained band gap energy versus x were obtained from PL from layers prepared by ultrahigh vacuum vapor phase epitaxy and chemical vapor deposition. 103,104 A comprehensive study has been published of the PL mechanisms in fully strained Si 1−x Ge x /Si heterostructures grown by solid-source MBE.…”

Section: Optical Propertiesmentioning

confidence: 99%

Advances in the growth and characterization of Ge quantum dots and islands

2005

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We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1−xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1−xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1−xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.

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Section: Optical Propertiesmentioning

confidence: 99%

Advances in the growth and characterization of Ge quantum dots and islands

2005

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“…The studies on the optical properties of quasi-2D Si-SiGe heterostructures have been focusing on material quality analysis [32][33][34][35][36][37] with a clear aim of searching for suitable artificial structures for fabricating cheap SiGe based optoelectronic devices and system. With such an aim in mind, much work has been done on the theory [6,8,9], growth [35,3839] and characterization [10][11][12][13][14] of ultrathin Sir,-G% (m + n = 10) superlattices and electroluminescence properties [40,41] of Si SiGe light emitting diodes.…”

Section: Optical Properties Of As-grown Heterostructuresmentioning

confidence: 99%

Optical properties of Si-Si1−xGex and Si-Ge nanostructures

Tang

Torres

Whall

et al. 1995

J Mater Sci: Mater Electron

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This paper reviews the current research status on the optical properties of Si-Sil _×Ge× and Si-Ge nanostructures. Although this is a relatively new field, existing research has already achieved promising results in terms of both physics and possible device applications including the effect of process-induced strain in nanostructures, quantum confinement and improved optical efficiency of collective excitation in wires with reduced dimension, and especiallythe huge improvement of optical efficiency in quantum dots after nanofabrication.These results potentially open a new field of research into both the physics of Si-Sil-×Gex nanostructures and the possible applications of them in cheap Si based optoelectronic industry.

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“…In the calculation, we used the theoretical band offset given by Rieger and Vogl 16 and an empirical exciton binding energy. 10 The effective masses of the heavy hole were taken as (0.278-0.07x)m 0 , 17 where m 0 and x are the free electron mass and Ge content, respectively. By fitting the excitonic luminescence energies of the dots and the wetting layers to the experimental data, we obtained the theoretical well width and box height for each annealing temperature.…”

Section: A͒mentioning

confidence: 99%

Ge/Si interdiffusion in the GeSi dots and wetting layers

Wan

Luo

Jiang

et al. 2001

Journal of Applied Physics

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The Ge/Si interdiffusion in GeSi dots grown on Si (001) substrate by gas-source molecular beam epitaxy is investigated. Transmission electron microscopy images show that, after annealing, the aspect ratio of the height to base diameter increases. Raman spectra show that the Si–Ge mode redshifts and the intensity of the local Si–Si mode increases with the increase of annealing temperature, which suggests the Ge/Si interdiffusion during annealing. The photoluminescence peaks from the dots and the wetting layers show blueshift due to the atomic intermixing during annealing. The interdiffusion thermal activation energies of GeSi dots and the wetting layers are 2.16 and 2.28 eV, respectively. The interdiffusion coefficient of the dots is about 40 times higher than that of wetting layers and the reasons were discussed.

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Quantum confinement effects in strained silicon-germanium alloy quantum wells

Cited by 69 publications

References 21 publications

Advances in the growth and characterization of Ge quantum dots and islands

Advances in the growth and characterization of Ge quantum dots and islands

Optical properties of Si-Si1−xGex and Si-Ge nanostructures

Ge/Si interdiffusion in the GeSi dots and wetting layers

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