Advances in the growth and characterization of Ge quantum dots and islands

Baribeau, J.‐M.; Rowell, N. L.; Lockwood, D. J.

doi:10.1557/jmr.2005.0405

Cited by 17 publications

(19 citation statements)

References 174 publications

(177 reference statements)

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“…[2,6] Due to the 4 % larger lattice constant of Ge with respect to Si, the morphological evolution is determined by strain relief. (For a detailed scenario of strain relief in this system see Ref.…”

Section: Self-organization By An Interplay Of Crystallite Formation Wmentioning

confidence: 99%

Self‐organization of Nanostructures in Inorganic and Organic Semiconductor Systems

2006

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Semiconductor nanostructures – and in particular ensembles of them – are the prerequisites for the ongoing miniaturization in microelectronics. Since lithographic techniques become increasingly expensive and technologically complex, self‐organization into quasiperiodic nanostructure arrays is an elegant alternative. Here, strain‐induced pattern formation in SiGe/Si(001), ion bombardment induced self‐organization of inorganic semiconductors, and crystallite ordering in oligophenylene films are presented as illustrative examples for nanostructure self‐organization that is not at all restricted to semiconductor systems.

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Section: Self-organization By An Interplay Of Crystallite Formation Wmentioning

confidence: 99%

Self‐organization of Nanostructures in Inorganic and Organic Semiconductor Systems

2006

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“…The current need for novel electronical and optical devices has triggered numerous research reports on the synthesis and use of metal and semiconductor nanoparticles (Kruis et al, 1998) for their improved properties, such as enhanced material strength (Suryanarayana, 1995;Sanders et al, 1997;Schiotz et al, 1999), altered magnetic or electronic behavior and quantum-confinement effects (Alivisatos, 1996;Madler et al, 2002c;Baribeau et al, 2005). Amongst others, the semimetal bismuth has been suggested for applications as thermoelectric material, optical and electrooptical devices (Wang et al, 2005) as well as in lubricant materials (Zhao et al, 2004), dry phototools (Wegner et al, 2002) and hall sensors (Sandhu et al 2004).…”

Section: Introductionmentioning

confidence: 99%

Flame spray synthesis under a non-oxidizing atmosphere: Preparation of metallic bismuth nanoparticles and nanocrystalline bulk bismuth metal

Grass

Stark

2006

J Nanopart Res

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Metallic bismuth nanoparticles of over 98% purity were prepared by a modified flame spray synthesis method in an inert atmosphere by oxygen-deficient combustion of a bismuth-carboxylate based precursor. The samples were characterized by X-ray diffraction, thermal analysis and scanning electron microscopy confirming the formation of pure, crystalline metallic bismuth nanoparticles. Compression of the asprepared powder resulted in highly dense, nanocrystalline pills with strong electrical conductivity and bright metallic gloss.

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“…The MBE growth provides better control over the average SiGe cluster composition; however, because of interdiffusion during growth, the composition is not uniform within the cluster volume [115][116][117]. structures grown using MBE.…”

Section: Epitaxially Grown Si/sige Nanostructures: Superlattices and mentioning

confidence: 99%

“…To summarize, buried SiGe clusters with the highest Ge composition of close to 50% at the center of the clusters are surrounded by Si, which is tensile strained above each SiGe cluster and compressed laterally between the clusters to maintain a low overall strain. Each SiGe cluster consists of Si 1-x Ge x crystalline alloys with x increasing toward the cluster center [115][116][117].…”

Section: Epitaxially Grown Si/sige Nanostructures: Superlattices and mentioning

confidence: 99%

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Chang

Tsybeskov

2010

Silicon Nanocrystals

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IntroductionFor the past 40 years, crystalline Si (c-Si) continues to be the major material for microelectronics, and modern silicon technology is superior compared to other semiconductors (e.g., II-VI and III-V compounds). In addition to the unique electronic and structural properties of bulk c-Si, silicon dioxide (SiO 2 ) and Si/SiO 2 interfaces, single-crystal Si possesses one of the best known lattice thermal conductivity [1,2]. This exceptional heat conductance is critically important for Si device heat management and circuit reliability. However, most of the modern complementary metal-oxide-semiconductor (CMOS) platforms are no longer single-crystal Si wafers but rather thin layers of Si-on-insulator (SOI), ultrathin strained Si and SiGe heterostructures that are the foundation of SiGe bipolar transistors (HBTs), and high-mobility metal-oxide-semiconductor field-effective transistors (MOSFETs). Major properties of these Si-based nanostructures are very different from those of bulk c-Si. For example, thermal conductivity in ultrathin SOI layers, SiGe alloys, and Si/SiGe nanostructures could be reduced by more than an order of magnitude compared to that in c-Si [3-6], and heat dissipation has become an important issue for modern nanoscale electronic devices and circuits. Thus, the understanding and improvement of heat management in Si-based nanostructures is critically important for the evolution of microelectronic industry.On the other hand, many interesting applications of nanostructured Si (ns-Si) in photonic devices and CMOS-compatible light emitters were recently discussed [7][8][9][10][11]. These ns-Si materials and devices can be produced by electrochemical anodization (i.e., porous Si [12]), chemical vapor deposition (CVD) using thermal decomposition of SiH 4 [13-15], Si ion implantation into a SiO 2 matrix [16], and deposition of amorphous Si/SiO 2 layers followed by thermal crystallization [17][18][19]. These ns-Si materials and devices produce an efficient and tunable light emission in the near-infrared and visible spectral region [20,21]. Also, it has been shown that under photoexcitation with energy density >10 mJ/cm 2 , optical gain is possibly Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

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Advances in the growth and characterization of Ge quantum dots and islands

Cited by 17 publications

References 174 publications

Self‐organization of Nanostructures in Inorganic and Organic Semiconductor Systems

Self‐organization of Nanostructures in Inorganic and Organic Semiconductor Systems

Flame spray synthesis under a non-oxidizing atmosphere: Preparation of metallic bismuth nanoparticles and nanocrystalline bulk bismuth metal

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

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