Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Kurakin, A. M.; Vitusevich, S. А.; Danylyuk, Serhiy; Hardtdegen, H.; Klein, N.; Bougrioua, Z.; Наумов, А. В.; Belyaev, A. E.

doi:10.1063/1.3100206

Cited by 40 publications

(33 citation statements)

References 39 publications

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“…4 as an example. In our analysis we observed that the m * values obtained from linear fitting are consistently higher than those obtained from non-linear curve fit as also reported by Kurakin et al 13 The quantum scattering time is contained in the exponential term in Eq. (1) and signifies the growth of the amplitude of oscillations with magnetic field.…”

Section: Resultssupporting

confidence: 71%

“…1. the 1 st subband are consistently higher for both the samples and are in the same range as reported in earlier studies such as by Kurakin et al 13 In this context attention is drawn towards the location of electron wave function for the two sub bands in GaN/AlGaN HEMT Structures. The Electron wave functions for two samples as deducted from the 1D Schrodinger Poisson solver 16 is depicted in Fig.…”

Section: Resultssupporting

confidence: 65%

“…0.209 m e and 0.207 m e for sample A and B respectively) are also closer to the theoretically estimated value of 0.2 m e as well as within the range of experimentally deduced value of (0.20 ± 0.01)m e for band edge effective mass in GaN. 13 On the other hand the m * values for Fig. 1.…”

Section: Resultsmentioning

confidence: 51%

“…In such a situation states related with interface roughness mainly appear responsible for the increase in the m * value for the 1 st subband. 13 We, therefore, predicted a comparatively higher interface roughness contributing to m * enhancement in sample B. Similarly, the location of 2 nd subband electrons away from the interface explains the closeness of m * values to the bulk values in that case.We now shift our attention to the results of multicarrier fitting shown in Fig.…”

Section: Resultsmentioning

confidence: 92%

“…9,12 However, for a tentative value of m * ∼ 0.2 m e for GaN, the value of χ is significantly less than 1.7 at low temperature and in high magnetic field range and hence the ln(A/T) vs. T is not strictly a straight line. 13 We, therefore, utilized Eq. (2) as such for a non linear fitting of ln (A/T) vs. T data to estimate m * as depicted in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Mishra¹,

Sharma²,

Manchanda³

et al. 2014

AIP Advances

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Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperature range of 1.8–300 K. The temperature dependence of the two dimensional electron gas mobility is extracted from simultaneous multicarrier fitting of transverse and longitudinal resistivity as a function of magnetic field and the data is utilized to estimate contribution of interface roughness to the mobility and the corresponding transport lifetime. The quantum scattering time obtained from the analysis of Shubnikov de Haas Oscillations in transverse magnetoresistance along with the transport lifetime time were used to estimate interface roughness amplitude and lateral correlation length. The results indicate that the insertion of AlN over layer deposited prior to the growth of GaN base layer on Fe doped GaN templates for forming HEMT structures reduced the parallel conduction but resulted in an increase in interface roughness.

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Section: Resultssupporting

confidence: 71%

Section: Resultssupporting

confidence: 65%

Section: Resultsmentioning

confidence: 51%

Section: Resultsmentioning

confidence: 92%

Section: Resultsmentioning

confidence: 99%

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Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Mishra¹,

Sharma²,

Manchanda³

et al. 2014

AIP Advances

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High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Wang

Chen

et al. 2018

Advanced Science

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Due to the intrinsic spontaneous and piezoelectric polarization effect, III‐nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III‐nitrides, InN is predicted to be the best conductive‐channel material because its electrons have the smallest effective mass and it exhibits large band offsets at the heterointerface of GaN/InN or AlN/InN. Until now, that prediction has remained theoretical, due to a giant gap between the optimal growth windows of InN and GaN, and the difficult epitaxial growth of InN in general. The experimental realization of 2DEG at an InGaN/InN heterointerface grown by molecular beam epitaxy is reported here. The directly probed electron mobility and the sheet electron density of the InGaN/InN heterostructure are determined by Hall‐effect measurements at room temperature to be 2.29 × 103 cm2 V−1 s−1 and 2.14 × 1013 cm−2, respectively, including contribution from the InN bottom layer. The Shubnikov–de Haas results at 3 K confirm that the 2DEG has an electron density of 3.30 × 1012 cm−2 and a quantum mobility of 1.48 × 103 cm2 V−1 s−1. The experimental observations of 2DEG at the InGaN/InN heterointerface have paved the way for fabricating higher‐speed transistors based on an InN channel.

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Determination of the in‐plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs

Çelik

Tiraş

Ardalı

et al. 2011

Phys. Status Solidi C

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Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained by fitting the nonoscillatory component to a polynomial of second degree, and then subtracting it from the raw experimental data. It is shown that only first subband is occupied with electrons. The two-dimensional (2D) carrier density and the Fermi energy with respect to subband energy (EF-E1) have been determined from the periods of the SdH oscillations. The in-plane effective mass (m*) and the quantum lifetime (τq) of electrons have been obtained from the temperature and magnetic field dependencies of the SdH amplitude, respectively. The in-plane effective mass of 2D electrons is in the range between 0.19 m0 and 0.22 m0. Our results for in-plane effective mass are in good agreement with those reported in the literature © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Cited by 40 publications

References 39 publications

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Determination of the in‐plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs

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