Determination of the in‐plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs

Çelik, Ö.; Tiraş, E.; Ardalı, Şükrü; Li̇şesi̇vdi̇n, S. B.; Özbay, Ekmel

doi:10.1002/pssc.201000594

Cited by 11 publications

(11 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[14,34]) and the LO phonon energy determined herein. In the numerical calculations of μ j we used the value of m * = 0.206 m 0 for 2D electrons in Al 0.25 Ga 0.75 N/GaN heterostructures obtained from Shubnikov-de Haas effect measurements [35]. The results obtained for the temperature dependences of μ j , μ tot andμ H are presented in Figure 5.…”

Section: Resultsmentioning

confidence: 99%

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

et al. 2012

Self Cite

View full text Add to dashboard Cite

Abstract:The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant. PACS

show abstract

Section: Resultsmentioning

confidence: 99%

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

et al. 2012

Self Cite

View full text Add to dashboard Cite

show abstract

“…101, 192102 (2012) in good agreement with low temperature SdH and CR measurement results. 2,26 The effective mass obtained at room temperature is m Ã ¼ ð0:36 6 0:03Þ m 0 , which is considerably higher than the low temperature effective mass in AlGaN/ GaN HEMTs. This increase may be explained by a decreasing spatial confinement of the 2DEG with increasing temperature which leads to an increased hybridization of the envelope wave functions of the 2DEG in the conduction band of the AlGaN/GaN structure.…”

Section: -3mentioning

confidence: 91%

“…2 The effective mass values reported in the literature for different AlGaN/GaN structures at temperatures below 10 K range from 0.19 to 0:25 m 0 (see Refs. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29]. This variation in the experimentally determined effective mass parameter is not surprising and very likely caused by variation in the band structure, intrinsic effects of piezoelectric and spontaneous polarization at the interface, or alloy disorder for instance.…”

mentioning

confidence: 99%

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Hofmann

Kühne

Schöche

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure deposited on SiC substrate is determined using the THz optical Hall effect in the spectral range from 0.22 to 0.32 THz for temperatures from 1.5 to 300 K. The THz optical Hall-effect measurements are combined with room temperature mid-infrared spectroscopic ellipsometry measurements to determine the layer thickness, phonon mode, and free-charge carrier parameters of the heterostructure constituents. An increase of the electron effective mass from (0.22±0.01)m0 at 1.5 K to (0.36±0.03)m0 at 300 K is observed, which is indicative for a reduction in spatial confinement of the two-dimensional electron gas at room temperature. The temperature-dependence of the mobility and the sheet density is in good agreement with electrical measurements reported in the literature.

show abstract

“…The transverse effective mass m * of the high-mobility carriers is calculated from the damping of the SdH oscillations with increasing temperature, described by the relation [33][34][35][36]…”

Section: Device Fabrication and Transport Propertiesmentioning

confidence: 99%

Quantum Transport Properties of Industrial Si28/SiO228

et al. 2019

View full text Add to dashboard Cite

We investigate the structural and quantum transport properties of isotopically enriched 28 Si/ 28 SiO 2 stacks deposited on 300-mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92%. Hall-bar transistors with an oxide stack comprising 10 nm of 28 SiO 2 and 17 nm of Al 2 O 3 (equivalent oxide thickness of 17 nm) are fabricated in an academic cleanroom. A critical density for conduction of 1.75 × 10 11 cm −2 and a peak mobility of 9800 cm 2 /Vs are measured at a temperature of 1.7 K. The 28 Si/ 28 SiO 2 interface is characterized by a roughness of = 0.4 nm and a correlation length of = 3.4 nm. An upper bound for valley splitting energy of 480 μeV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale 28 Si/ 28 SiO 2 as a promising material platform to manufacture industrial spin qubits.

show abstract

Determination of the in‐plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs

Cited by 11 publications

References 8 publications

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Quantum Transport Properties of Industrial Si28/SiO228

Contact Info

Product

Resources

About