Quantum band engineering of nitride semiconductors for infrared lasers

Malis, Oana; Edmunds, C.; Li, D.; Shao, Jiayi; Gardner, Geoffrey C.; Li, W.; Fay, Patrick; Manfra, Michael J.

doi:10.1117/12.2036286

Cited by 2 publications

(5 citation statements)

References 14 publications

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“…To date, promising experimental results have been reported for near-and far-infrared intersubband absorption and photodetection in m-plane nitride heterostructures utilizing limited Al-composition alloys. [2][3][4][5][6][7][8][9][10][11][12] Mid-infrared intersubband absorption in m-plane AlGaN/GaN heterostructures grown by metal-organic chemical vapor deposition (MOCVD) was demonstrated by Kotani et al [4][5][6] We reported far-infrared (THz) intersubband absorption in AlGaN/GaN superlattices grown by molecular beam epitaxy (MBE). 2 Lim et al [7][8][9][10][11] also demonstrated short-to longwavelength infrared intersubband transitions in MBE-grown AlGaN/GaN heterostructures.…”

Section: Introductionmentioning

confidence: 98%

“…Nonpolar m-plane AlGaN/GaN heterostructures are interesting from both a fundamental material growth perspective and for practical applications in infrared optoelectronic devices. [1][2][3][4][5][6][7][8][9][10][11][12] Intersubband optoelectronic devices utilize optical transitions within the conduction band of GaN/AlGaN quantum wells to emit or detect infrared radiation. The accessible wavelength range is mainly determined by the conduction band-offset between the well and the barrier material, i.e., GaN and AlGaN in this case.…”

Section: Introductionmentioning

confidence: 99%

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Kinetic instability of AlGaN alloys during MBE growth under metal-rich conditions on m-plane GaN miscut towards the -c axis

Shirazi-HD

Diaz

Nguyen

et al. 2018

Journal of Applied Physics

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AlxGa1-xN layers with Al-composition above 0.6 (0.6 < x < 0.9) grown under metal-rich conditions by plasma-assisted molecular beam epitaxy on m-plane GaN miscut towards the -c axis are kinetically unstable. Even under excess Ga flux, the effective growth rate of AlGaN is drastically reduced, likely due to suppression of Ga-N dimer incorporation. The defect structure generated during these growth conditions is studied with energy dispersive x-ray spectroscopy scanning transmission electron microscopy as a function of Al flux. The AlGaN growth results in the formation of thin Al(Ga)N layers with Al-composition higher than expected and lower Al-composition AlGaN islands. The AlGaN islands have a flat top and are elongated along the c-axis (i.e., stripe-like shape). Possible mechanisms for the observed experimental results are discussed. Our data are consistent with a model in which Al-N dimers promote release of Ga-N dimers from the m-plane surface.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Kinetic instability of AlGaN alloys during MBE growth under metal-rich conditions on m-plane GaN miscut towards the -c axis

Shirazi-HD

Diaz

Nguyen

et al. 2018

Journal of Applied Physics

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“…Intersubband absorption in m‐plane AlGaN/GaN has been reported in a wide spectral range from near‐infrared to the terahertz range . Due to the AlGaN growth instability at high Al‐content, we focus our discussion here on superlattices containing less than 60%Al in the barriers.…”

Section: Resultsmentioning

confidence: 99%

“…Pesach et al reported fabrication and performance of an m‐plane InGaN/(Al)GaN quantum well infrared photodetector . We first reported far‐infrared (THz) intersubband absorption, and then near‐infrared absorption and photocurrent in MBE‐grown m‐plane AlGaN/GaN superlattices. This paper focuses on our recent progress towards improving near‐infrared intersubband absorption and understanding experimental observations.…”

Section: Introductionmentioning

confidence: 86%

“…Nonpolar nitride heterostructures have been proposed as alternative materials to polar heterostructures for infrared intersubband (ISB) devices . Due to large conduction band offsets between GaN and AlGaN, and large longitudinal‐optical phonon energy, the nitrides are potential candidates for near‐ to far‐infrared lasers and photodetectors.…”

Section: Introductionmentioning

confidence: 99%

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Intersubband Transitions in Nonpolar m‐Plane AlGaN/GaN Heterostructures

Nguyen

Shirazi-Hosseini-Dokht

Cao

et al. 2018

Physica Status Solidi (a)

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heterostructures have the potential to supplant polar heterostructures in infrared optoelectronic devices due to their theoretical advantages stemming from the absence of built-in polarization fields along nonpolar directions of the nitride wurtzite lattice. However, development of nonpolar m-plane infrared devices in a broad spectral range has been hampered, so far, by challenges to grow homogeneous high Al-composition AlGaN on m-plane GaN. Al x Ga 1-x N layers with 0.6< x <0.8 are found to be kinetically unstable under metal-rich growth conditions by plasma-assisted molecular-beam epitaxy. After reviewing recent progress in the field, this paper focuses on the effect of the structure of m-plane Al x Ga 1Àx N/GaN (x <0.6) superlattices on near-infrared intersubband absorption. Even at these intermediate Al-compositions, the effective growth rate of AlGaN is drastically reduced, and the AlGaN-GaN interface roughness is unexpectedly high. Consequently, accurate determination of layer thicknesses and alloy composition necessitates structural characterization by a combination of scanning transmission electron microscopy and high-resolution X-ray diffraction. The energy and linewidth of near-infrared intersubband transitions are also significantly affected by this unusual growth behavior. The experimental results for intersubband absorption of m-and c-plane superlattices are compared to each other and with numerical calculations, and the main reasons for discrepancies are discussed.

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Quantum band engineering of nitride semiconductors for infrared lasers

Cited by 2 publications

References 14 publications

Kinetic instability of AlGaN alloys during MBE growth under metal-rich conditions on m-plane GaN miscut towards the -c axis

Kinetic instability of AlGaN alloys during MBE growth under metal-rich conditions on m-plane GaN miscut towards the -c axis

Intersubband Transitions in Nonpolar m‐Plane AlGaN/GaN Heterostructures

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