Quantum ballistic analysis of transition metal dichalcogenides based double gate junctionless field effect transistor and its application in nano-biosensor

Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.

doi:10.1016/j.spmi.2017.06.055

Cited by 7 publications

(3 citation statements)

References 37 publications

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“…If there is no scattering, and the device transverse dimensions remain constant from one end to the other, then the various modes will be uncoupled, so one can simply use the Landauer formula. This provides a type of ballistic transport for a small device and has been used to study wave function penetration into the gate oxide [212], and to study a double-gate FET in TMDCs as a biological sensor [213]. A slightly different formulation, termed the quantum transmission boundary method [214], has been used to study the effect of defects in graphene nanoribbon FETs [215].…”

Section: The Schrödinger Equationmentioning

confidence: 99%

A review of quantum transport in field-effect transistors

Ferry

Weinbub

Nedjalkov

et al. 2022

Semicond. Sci. Technol.

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Confinement in small structures has required quantum mechanics, which has been known for a great many years. This leads to quantum transport. The field-effect transistor has had no need to be described by quantum transport over most of the century for which it has existed. But, this has changed in the past few decades, as modern versions tend to be absolutely controlled by quantum confinement and the resulting modifications to the normal classical descriptions. In addition, correlation and confinement lead to a need for describing the transport by quantum methods as well. In this review, we describe the quantum effects and the method of treating by various approaches to quantum transport.

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Section: The Schrödinger Equationmentioning

confidence: 99%

A review of quantum transport in field-effect transistors

Ferry

Weinbub

Nedjalkov

et al. 2022

Semicond. Sci. Technol.

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“…These biosensors are implemented using dielectric modulated FET (DMFET) where the biomolecules are captured in a cavity formed in the oxide region. Various simulation and analytical model based studies have been reported in the recent literature [10][11][12][13] which have proven the potential of this new biosensing technique in a dry environment. This work also investigates the prospect of monolayer TMDC material as a channel in such DMFET biosensor using the compact transport model developed for TMDC MOSFET.…”

Section: Introductionmentioning

confidence: 99%

“…The differential equation in(12) cannot be solved for a closed form analytical solution. To simplify the equation, we invoked gradual channel approximation and got » This assumption is particularly valid for long channel 2D MOSFETs where lateral electric field from drain to source is weaker compared to the vertical electric field from top to bottom gate.…”

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confidence: 99%

A physically based compactI–Vmodel for monolayer TMDC channel MOSFET and DMFET biosensor

et al. 2018

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In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic potential in the channel. Current is then calculated by solving the drift-diffusion equation. The model makes gradual channel approximation to simplify the solution procedure. The appropriate density of states obtained from the first principle density functional theory simulation has been considered to keep the model physically accurate for monolayer TMDC channel FET. The outcome of the model has been benchmarked against both experimental and numerical quantum simulation results with the help of a few fitting parameters. Using the compact model, detailed output and transfer characteristics of monolayer WSe FET have been studied, and various performance parameters have been determined. The study confirms excellent ON and OFF state performances of monolayer WSe FET which could be viable for the next generation high-speed, low power applications. Also, the proposed model has been extended to study the operation of a biosensor. A monolayer MoS channel based dielectric modulated FET is investigated using the compact model for detection of a biomolecule in a dry environment.

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Asymmetric Channel Junctionless Field-Effect Transistors: a MOS Structure Biosensor

Bhuiyan

Subrina

2021

Silicon

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Quantum ballistic analysis of transition metal dichalcogenides based double gate junctionless field effect transistor and its application in nano-biosensor

Cited by 7 publications

References 37 publications

A review of quantum transport in field-effect transistors

A review of quantum transport in field-effect transistors

A physically based compactI–Vmodel for monolayer TMDC channel MOSFET and DMFET biosensor

Asymmetric Channel Junctionless Field-Effect Transistors: a MOS Structure Biosensor

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