Quantum anomalous Hall effect in Cr2Ge2Te6/Bi2Se3/Cr2Ge2Te6 heterostructures

Li, Ping; You, Yu-Wei; Huang, Kai; Luo, Weidong

doi:10.1088/1361-648x/ac2117

Cited by 5 publications

(2 citation statements)

References 46 publications

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“…In 2015, Lin et al predicted an elevated Curie temperature of 80 K for the Ising limit [52]. Chern insulators are available in CrGeTe 3 /Bi 2 Se 3 /CrGeTe 3 heterostructures on the proximity effect between Bi 2 Se 3 slabs and CrGeTe 3 layers [123]. Besides, the twisted graphene on monolayer CrGeTe 3 can switch the magnetic exchange coupling from FM to AFM when at the angle 19.1 • [124].…”

Section: D Ferromagnetism Predictionmentioning

confidence: 99%

Two-dimensional chalcogenide-based ferromagnetic semiconductors

Wu¹,

Li²,

Liu³

2022

J. Phys.: Condens. Matter

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Two-dimensional (2D) magnetic materials draw an enormous amount of attention due to their novel physical properties and potential spintronics device applications. Room-temperature ferromagnetic (FM) semiconductors have long been pursued in 2D magnetic materials, which show a long range magnetic order down to atomic-layer thickness. The intrinsic ferromagnetism has been predicted in a series of 2D materials and verified in experiments and the magnetism can be modulated by multiple physical field, exhibiting promising application prospect. In this review, we overview several types of 2D chalcogenide-based FM semiconductors discovered in recent years. We summary and compare their basic physical properties, including the crystal structures, electronic structures, and mechanical stability. The 2D magnetism can be described by several physical model. We also foucus on the recent progresses about theoretical prediction of FM semiconductors and experimental observation of external-field regulation. Most of investigations have shown that 2D chalcogenide-based FM semiconductors have relatively high Curie temperature (Tc) and structural stability. These materials are promising to realize the room-temperature ferromagnetism in atomic layer thickness, which is significant to design spintronics devices.

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Section: D Ferromagnetism Predictionmentioning

confidence: 99%

Two-dimensional chalcogenide-based ferromagnetic semiconductors

Wu¹,

Li²,

Liu³

2022

J. Phys.: Condens. Matter

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“…Though faint magnetic moments can be induced by defect regulation and magnetic nearest neighbor effect [26], it is difficult to form a stable long-range magnetic order, and to control experimentally [27]. Recently, efforts are made to obtain two-dimensional materials with intrinsic magnetic moments, such as CrI 3 [28,29], Cr 2 Ge 2 Te 6 [30,31], MnBi 2 Te 4 [32,33], etc. However, due to the limitations of preparation methods and detection methods, the search for intrinsic twodimensional magnetic materials is relatively slow in the early stage [26,34].…”

Section: Introductionmentioning

confidence: 99%

Perfect spin-filtering effect in molecular junctions based on half-metallic penta-hexa-graphene nanoribbons

Deng

Chen

Hong

et al. 2022

J. Phys.: Condens. Matter

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The design and control of spintronic devices is a research hotspot in the field of electronics, and pure carbon-based materials provide new opportunities for the construction of electronic devices with excellent performance. Using density functional theory in combination with nonequilibrium Green's functions method, we design spin filter devices based on Penta-hexa-graphene (PHG) nanoribbons – a carbon nanomaterial in which the intrinsic magnetic moments combines with edge effects leading to a half-metallic property. Spin-resolved electronic transport studies show that such carbon-based devices can achieve nearly 100% spin filtering effect (SFE) at low bias voltages. Such SEF can resist the influence of hydrogen passivation at different positions, but hardly survive under a hydrogen-rich environment. Our analysis show that the perfect SEF transport properties are caused by the magnetic and electronic properties of PHG nanoribbons, especially the magnetic moments on the quasi-sp3 carbons. These interesting results indicate that PHG nanomaterials have very prominent application prospects in future spintronic devices.

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2D Bi2Se3 materials for optoelectronics

2021

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Summary 2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi 2 Se 3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi 2 Se 3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi 2 Se 3 materials. The structure and inherent properties of Bi 2 Se 3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi 2 Se 3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.

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Quantum anomalous Hall effect in Cr₂Ge₂Te₆/Bi₂Se₃/Cr₂Ge₂Te₆ heterostructures

Cited by 5 publications

References 46 publications

Two-dimensional chalcogenide-based ferromagnetic semiconductors

Two-dimensional chalcogenide-based ferromagnetic semiconductors

Perfect spin-filtering effect in molecular junctions based on half-metallic penta-hexa-graphene nanoribbons

2D Bi2Se3 materials for optoelectronics

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