2D Bi2Se3 materials for optoelectronics

Wang, Fakun K.; Yang, Sijie; Zhai, Tianyou

doi:10.1016/j.isci.2021.103291

Cited by 27 publications

(19 citation statements)

References 131 publications

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“…At the substrate temperature of 500 K, dendritic islands are formed on the bottom layer with many holes, in spite of various Bi fluxes (Figure a–c). According to the diffusion limited aggregation (DLA) model, such a branched morphology indicates that the adatoms lack sufficient diffusion at the growth temperature of 500 K. Line profile analysis reveals a thickness of 12 Å for the dendritic islands, akin to that of 1 quintuple layer (QL) Bi 2 Se 3 thin films grown on NbSe 2 and Cr 2 Ge 2 Te 6 . , When the substrate temperature increases to 600 K, a nearly continuous layer composed of dense and irregular domains can be observed, as shown in Figure d–f. Compact Bi 2 Se 3 islands are formed on the bottom layer.…”

Section: Resultsmentioning

confidence: 95%

van der Waals Epitaxy of Bi Nanowires and Bi₂Se₃ Thin Films on an Antiferromagnetic Substrate of CoNb₃S₆

Xiao

Zhu

et al. 2023

J. Phys. Chem. C

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The combination of a topological insulator and an antiferromagnet is expected to exhibit the quantum anomalous Hall effect due to the breaking of the time-reversal symmetry. As a layered antiferromagnet, CoNb 3 S 6 was recently found to exhibit an anomalous Hall effect below the Neél temperature (T N = 29 K). Here, we report the controllable growth of Bi nanowires and Bi 2 Se 3 thin films on CoNb 3 S 6 substrates using molecular beam epitaxy. The composition and morphology of the as-prepared Bi nanowires and Bi 2 Se 3 thin films were studied by atomic force microscopy, X-ray photoelectron spectroscopy, and scanning tunneling microscopy. We found that the as-grown Bi nanowires with abundant sizes are oriented along high-symmetry directions of the substrate, forming firework-like structures. Such firework-like structures of Bi nanowires exhibit a high edge-to-surface ratio as well as a strong anisotropy, highly desirable for photoelectric devices and industrial catalysts. The absence of oxidation peaks verifies that the asprepared samples are of high quality and air stability, very promising for applications.

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Section: Resultsmentioning

confidence: 95%

van der Waals Epitaxy of Bi Nanowires and Bi₂Se₃ Thin Films on an Antiferromagnetic Substrate of CoNb₃S₆

Xiao

Zhu

et al. 2023

J. Phys. Chem. C

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“…Among all the second-generation TI materials, Bi 2 Se 3 has the best optical transmission, as a typical material in the second generation of TI, Bi 2 Se 3 can be prepared in a relatively simple method, which have a band gap width of 0.3 eV. 40 In Figure . 1 we briefly describe two unique advantages of selecting Bi 2 Se 3 as a saturable absorption device: optical transmittance and nonlinear optical characteristics. The optical transmittance of Bi 2 Se 3 is closely related to its own band gap structure and free electron concentration.…”

Section: Increase the Damage Threshold Of Timentioning

confidence: 99%

Preparation of High Damage Threshold Device Based on Bi₂Se₃ Film and Its Application in Fiber Lasers

et al. 2023

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As a handicap for passive mode-locked lasers to operate stably for a long time, the undesirable damage threshold of saturable absorption devices means that it is difficult to maintain a normal operation state under the irradiation brought by ultrashort pulses. To reduce the damage probability when the saturable absorption devices interact with an ultrafast laser, some technologies have been developed to resist the high-energy irradiation of an ultrafast laser that will also increase the difficulty of laser construction at the same time. In this paper we put forward a new research idea to improve the low-damage threshold problem: optimizing the optical transmittance, which will avoid dissociation due to excessive heat accumulation. Using the melt and machine exfoliation method, the high optical transmittance (>95%) saturable absorption devices based on Bi 2 Se 3 are prepared, whose damage threshold (2.45 mJ/cm 2 ) is nearly 5 times higher than commercial SESAM. The devices applied to generate femtosecond pulses exhibit exciting nonlinear optical effects, which enable the mode-locked fiber laser to operate with a pulse duration of 195 fs and a signal-to-noise ratio of 81.73 dB. This discovery not only proves that the passive mode-locked laser-based high transmittance Bi 2 Se 3 can obtain reliable pulse output, but also provides a new perspective for the selection of saturable absorption materials in the future.

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“…Typically, the THz emitter devices are made of ferromagnetic and nonmagnetic (FM/NM) thin metal film heterostructures to generate the THz radiation when the heterostructures are irradiated with optical femtosecond laser pulses [74]. One of the main advantages of 2D materials is the presence of spin-orbit coupling, which is critical for spintronics THz emitters [75,76].…”

Section: Trends In Terahertz Technologymentioning

confidence: 99%

Two-Dimensional Materials for Terahertz Emission

Alharbi¹,

Alshamrani²,

Hussain³

et al. 2023

Trends in Terahertz Technology

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The demand for ultrahigh-speed, lightweight, low-cost, and defect-tolerant electronic devices drives the industry to switch to terahertz (THz) technologies. The use of two-dimensional (2D) materials has massively increased in THz applications due to their appealing electronic and optoelectronic properties, including tunable bandgap, high carrier mobility, wideband optical absorption, and relatively short carrier lifetime. Several 2D-material-based emitters, modulators, and detectors have been fabricated and examined. In this context, considerable research has been going on for 2D-material-based THz emitting sources, including materials and device structure to understand the electronics and optoelectronics mechanisms occurring in the THz region. This chapter focuses on the 2D-material-based emitters with insights into the background, the physical principle of photoconductive THz emitters, the 2D materials’ properties, and the research trends in the fabrication and characterization of the THz sources based upon 2D materials.

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2D Bi2Se3 materials for optoelectronics

Cited by 27 publications

References 131 publications

van der Waals Epitaxy of Bi Nanowires and Bi₂Se₃ Thin Films on an Antiferromagnetic Substrate of CoNb₃S₆

van der Waals Epitaxy of Bi Nanowires and Bi₂Se₃ Thin Films on an Antiferromagnetic Substrate of CoNb₃S₆

Preparation of High Damage Threshold Device Based on Bi₂Se₃ Film and Its Application in Fiber Lasers

Two-Dimensional Materials for Terahertz Emission

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2D Bi2Se3 materials for optoelectronics

Cited by 27 publications

References 131 publications

van der Waals Epitaxy of Bi Nanowires and Bi2Se3 Thin Films on an Antiferromagnetic Substrate of CoNb3S6

van der Waals Epitaxy of Bi Nanowires and Bi2Se3 Thin Films on an Antiferromagnetic Substrate of CoNb3S6

Preparation of High Damage Threshold Device Based on Bi2Se3 Film and Its Application in Fiber Lasers

Two-Dimensional Materials for Terahertz Emission

Contact Info

Product

Resources

About

van der Waals Epitaxy of Bi Nanowires and Bi₂Se₃ Thin Films on an Antiferromagnetic Substrate of CoNb₃S₆

van der Waals Epitaxy of Bi Nanowires and Bi₂Se₃ Thin Films on an Antiferromagnetic Substrate of CoNb₃S₆

Preparation of High Damage Threshold Device Based on Bi₂Se₃ Film and Its Application in Fiber Lasers