Two-Dimensional Materials for Terahertz Emission

Abstract

The demand for ultrahigh-speed, lightweight, low-cost, and defect-tolerant electronic devices drives the industry to switch to terahertz (THz) technologies. The use of two-dimensional (2D) materials has massively increased in THz applications due to their appealing electronic and optoelectronic properties, including tunable bandgap, high carrier mobility, wideband optical absorption, and relatively short carrier lifetime. Several 2D-material-based emitters, modulators, and detectors have been fabricated and examined. In this context, considerable research has been going on for 2D-material-based THz emitting sources, including materials and device structure to understand the electronics and optoelectronics mechanisms occurring in the THz region. This chapter focuses on the 2D-material-based emitters with insights into the background, the physical principle of photoconductive THz emitters, the 2D materials’ properties, and the research trends in the fabrication and characterization of the THz sources based upon 2D materials.

On-Chip Integration of a Plasmonic FET Source and a Nano-Patch Antenna for Efficient Terahertz Radiation

“…A promising approach toward developing an active terahertz source involves utilizing electron plasma oscillations in the two-dimensional (2D) electron channel of field-effect transistors (FETs). Many 2D materials have been proposed for terahertz applications due to their appealing electronic and optical properties, including a tunable bandgap, high carrier mobility, and wideband optical absorption [12]. Recent experiments with graphene FETs have demonstrated high-quality 2D electron plasma oscillations in the terahertz domain at room temperatures [13,14].…”