Quantum and transport scattering times in AlGaAs/InGaAs nanoheterostructures with AlAs inserts in the spacer layer

Abstract

The influence of nano-sized AlAs inserts in the spacer layer AlGaAs on scattering mechanisms of AlGaAs/InGaAs nanoheterostructures has been considered. It was shown that the introduction of AlAs lead to mobility enhancement up to 20%. The ratio of transport-to-quantum scattering times revealed that in the case of the spacer with AlAs inserts the scattering on ionized Sidonors is strongly decreased in comparison to the spacer without AlAs.