Quantitative scanning thermal microscopy of ErAs/GaAs superlattice structures grown by molecular beam epitaxy

Park, K. W.; Nair, Hari P.; Crook, Adam M.; Bank, Seth R.; Yu, E. T.

doi:10.1063/1.4792757

Cited by 8 publications

(11 citation statements)

References 32 publications

(47 reference statements)

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“…In the active mode, the probe acts as a sample heater and the temperature sensor simultaneously, and a distribution of local thermal conductivity can be obtained [26,27]. The SThM allows highly localized measurements of thermal properties of micro-and nanostructures [28][29][30]. Nanofabricated thermal probes (NThP) provide spatial resolution better than 100 nm [31], and good temperature sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Quantitative Thermal Microscopy Measurement with Thermal Probe Driven by dc+ac Current

et al. 2016

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Quantitative thermal measurements with spatial resolution allowing the examination of objects of submicron dimensions are still a challenging task. The quantity of methods providing spatial resolution better than 100 nm is very limited. One of them is scanning thermal microscopy (SThM). This method is a variant of atomic force microscopy which uses a probe equipped with a temperature sensor near the apex. Depending on the sensor current, either the temperature or the thermal conductivity distribution at the sample surface can be measured. However, like all microscopy methods, the SThM gives only qualitative information. Quantitative measuring methods using SThM equipment are still under development. In this paper, a method based on simultaneous registration of the static and the dynamic electrical resistances of the probe driven by the sum of dc and ac currents, and examples of its applications are described. Special attention is paid to the investigation of thin films deposited on thick substrates. The influence of substrate thermal properties on the measured signal and its dependence on thin film thermal conductivity and film thick-This article is part of the selected papers presented at the 18th International Conference on Photoacoustic and Photothermal Phenomena.

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Section: Introductionmentioning

confidence: 99%

Quantitative Thermal Microscopy Measurement with Thermal Probe Driven by dc+ac Current

et al. 2016

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“…The contribution of the water meniscus in the tip-sample thermal interaction was not separated from the solid-solid contact under ambient conditions [22,23] or was neglected while working under vacuum conditions [24,25]. The meniscus dimensions are also needed parameters to investigate the heat transfer through the water meniscus and are usually assumed [26] without any proper evidence.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent capillary forces at nano-contacts for estimating the heat conduction through a water meniscus

Assy

Gomès

2015

Nanotechnology

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The temperature dependence of the capillary forces at nano-sized contacts is investigated. Two different resistive scanning thermal microscopy (SThM) nanoprobes are used in this study. Measurements of the capillary forces are reported as a function of the probe temperature on hydrophilic samples of different thermal properties. These forces appear to be largely reduced for probe temperatures larger than a threshold temperature, where the value depends on the sample thermal conductance. This could pave the way to an alternative solution to reduce the stiction in nano/ micro-electromechanical (NEMS/MEMS) devices. The dimensions of the water meniscus at the probe-sample contact were then estimated. Moreover, these results help the evaluation of thermal conductance through the water meniscus. It is found, through this work, that the values of the thermal conductance through the water meniscus can represent 6% of those of the contact thermal conductance in the case of the KNT probe (from Kelvin nanotechnology). These values can be equal to 4% of those of thermal conduction in the cantilever-sample air gap in the case of a doped-silicon probe.

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“…Developments in the understanding and engineering of thermal properties of materials at the nanoscale [1][2][3][4][5][6][7][8][9] have led to increased interest in methods for quantitative characterization of thermal transport behavior with high spatial resolution [10][11][12]. Among the different types of nanostructures exhibiting altered thermal transport behavior compared to their bulk-like counterparts, crystalline semiconductors in which nanoparticles or other nanoscale structures are incorporated via epitaxial growth are of particular interest due to their potential for use in thermoelectric devices [6,7,[13][14][15] or for integration of structures possessing particular thermal properties with high-performance electronic or optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

“…In such structures, characterization of thermal conductivity in subsurface regions and of local variations in thermal conductivity presents a particular metrological challenge. For epitaxial semiconductor structures, scanning probe microscopy (SPM) is typically employed with the sample in an in-plane geometry that provides access only to the epitaxially grown surface [10,11,20,21]. Here, we present studies in which nanoscale cross-sectional thermal measurements are demonstrated that enable direct measurement and comparison of thermal properties across multiple materials via the 3ω technique combined with SPM [10][11][12]21].…”

Section: Introductionmentioning

confidence: 99%

“…For epitaxial semiconductor structures, scanning probe microscopy (SPM) is typically employed with the sample in an in-plane geometry that provides access only to the epitaxially grown surface [10,11,20,21]. Here, we present studies in which nanoscale cross-sectional thermal measurements are demonstrated that enable direct measurement and comparison of thermal properties across multiple materials via the 3ω technique combined with SPM [10][11][12]21]. By cleaving and, if needed, polishing to expose a smooth crosssectional surface, properties of material beneath the final epitaxially grown surface can be characterized.…”

Section: Introductionmentioning

confidence: 99%

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Cross-sectional scanning thermal microscopy of ErAs/GaAs superlattices grown by molecular beam epitaxy

et al. 2015

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Scanning thermal microscopy has been implemented in a cross-sectional geometry, and its application for quantitative, nanoscale analysis of thermal conductivity is demonstrated in studies of an ErAs/GaAs nanocomposite superlattice. Spurious measurement effects, attributable to local thermal transport through air, were observed near large step edges, but could be eliminated by thermocompression bonding to an additional structure. Using this approach, bonding of an ErAs/GaAs superlattice grown on GaAs to a silicon-on-insulator wafer enabled thermal signals to be obtained simultaneously from Si, SiO 2 , GaAs, and ErAs/GaAs superlattice. When combined with numerical modeling, the thermal conductivity of the ErAs/GaAs superlattice measured using this approach was 11±4 W/m·K.

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Quantitative scanning thermal microscopy of ErAs/GaAs superlattice structures grown by molecular beam epitaxy

Cited by 8 publications

References 32 publications

Quantitative Thermal Microscopy Measurement with Thermal Probe Driven by dc+ac Current

Quantitative Thermal Microscopy Measurement with Thermal Probe Driven by dc+ac Current

Temperature-dependent capillary forces at nano-contacts for estimating the heat conduction through a water meniscus

Cross-sectional scanning thermal microscopy of ErAs/GaAs superlattices grown by molecular beam epitaxy

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