Quantitative investigation of the O<sub>2</sub><sup>+</sup>‐induced topography of GaAs and other III–V semiconductors: An STM study of the ripple formation and suppression of the secondary ion yield change by sample rotation

Karen, Akiya; Nakagawa, Y.; Hatada, Motoyoshi; Okuno, K.; Soeda, Fusami; Ishitani, A.

doi:10.1002/sia.740230710

Cited by 34 publications

(22 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results were corroborated by Karen et al [8][9][10], who investigated ripple formation on GaAs surfaces under bombardment with 10.5 keV O + 2 ions. They found that ripple formation takes place for angles of incidence between 30…”

Section: A Ripple Formationsupporting

confidence: 71%

“…[8][9][10]. The experiments indicate that the ripple wavelength is linear in the energy, following ℓ ∼ ǫ cos θ.…”

Section: A Ripple Formationmentioning

confidence: 99%

“…Furthermore, in Refs. [8][9][10] it was unambiguously shown that the process of ripple formation is not caused by defects or inherited irregularities on the surface, but is determined merely by the primary ion characteristics. These results indicate that ripple formation is independent of microscopic details and the surface chemistry.…”

Section: A Ripple Formationmentioning

confidence: 99%

See 2 more Smart Citations

Morphology of ion-sputtered surfaces

Makeev

Cuerno

Barabási

2002

Nuclear Instruments and Methods in Physics Research Section B:

485

527

View full text Add to dashboard Cite

We derive a stochastic nonlinear continuum theory to describe the morphological evolution of amorphous surfaces eroded by ion bombardment. Starting from Sigmund's theory of sputter erosion, we calculate the coefficients appearing in the continuum equation in terms of the physical parameters characterizing the sputtering process. We analyze the morphological features predicted by the continuum theory, comparing them with the experimentally reported morphologies. We show that for short time scales, where the effect of nonlinear terms is negligible, the continuum theory predicts ripple formation. We demonstrate that in addition to relaxation by thermal surface diffusion, the sputtering process can also contribute to the smoothing mechanisms shaping the surface morphology. We explicitly calculate an effective surface diffusion constant characterizing this smoothing effect, and show that it is responsible for the low temperature ripple formation observed in various experiments. At long time scales the nonlinear terms dominate the evolution of the surface morphology. The nonlinear terms lead to the stabilization of the ripple wavelength and we show that, depending on the experimental parameters such as angle of incidence and ion energy, different morphologies can be observed: asymptotically, sputter eroded surfaces could undergo kinetic roughening, or can display novel ordered structures with rotated ripples. Finally, we discuss in detail the existing experimental support for the proposed theory, and uncover novel features of the surface morphology and evolution, that could be directly tested experimentally.

show abstract

Section: A Ripple Formationsupporting

confidence: 71%

“…[8][9][10]. The experiments indicate that the ripple wavelength is linear in the energy, following ℓ ∼ ǫ cos θ.…”

Section: A Ripple Formationmentioning

confidence: 99%

Section: A Ripple Formationmentioning

confidence: 99%

See 1 more Smart Citation

Morphology of ion-sputtered surfaces

Makeev

Cuerno

Barabási

2002

Nuclear Instruments and Methods in Physics Research Section B:

485

527

View full text Add to dashboard Cite

show abstract

“…The sapphire ripple wavelength increases with ion energy at low temperature, which is consistent with observations for ion eroded SiO 2 , GaAs and Si surfaces. 19,24,25 The data obtained from high/low flux ion sources overlap within experimental error at both 500 eV and 1000 eV, which indicates that the ripple wavelength is independent of incident ion flux at low temperature. A non-linear least squares fit gives a power law coefficient with p=0.71 for the dependence of the wavelength on ion energy (ℓ x ∼ ε p ).…”

Section: B Ripple Wavelength Variation With Ion Energymentioning

confidence: 85%

Wavelength tunability of ion-bombardment-induced ripples on sapphire

et al. 2007

View full text Add to dashboard Cite

A study of ripple formation on sapphire surfaces by 300 -2000 eV Ar + ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is performed in order to study the wavelength of ripples formed on sapphire (0001) surfaces. We find that the wavelength can be varied over a remarkably wide range -nearly two orders of magnitude -by changing the ion incidence angle.Within the linear theory regime, the ion induced viscous flow smoothing mechanism explains the general trends of the ripple wavelength at low temperature and incidence angles larger than 30 • . In this model, relaxation is confined to a few-nm thick damaged surface layer. The behavior at high temperature suggests relaxation by surface diffusion. However, strong smoothing is inferred from the observed ripple wavelength near normal incidence, which is not consistent with either surface diffusion or viscous flow relaxation.

show abstract

“…Careful calculations of the energy distribution by molecular-dynamic simulations are necessary to clarify to what extent is underestimated by TRIM. For oblique incidence ion sputtering the energy dependence of the characteristic wavelength has been investigated by several groups. 6,27 Theoretically the characteristic wavelength is obtained from the more complicated anisotropic KS equation, which makes the results more sensitive to specific parameter differences than under isotropic sputtering conditions. e.g., Vajo et al investigated the energy dependence of the characteristic wavelength for Si ͑100͒ surfaces in the energy range of 1.5 to 7 keV.…”

mentioning

confidence: 99%

Energy dependence of quantum dot formation by ion sputtering

2001

View full text Add to dashboard Cite

Ordered quantum dot patterns are generated on GaSb and InSb surfaces due to a surface instability induced by Ar ϩ -ion sputtering at normal incidence. The characteristic length of the generated patterns scales with the square root of the ion energy over the energy range of 75-1800 eV. This energy dependence is compared to the solutions of the isotropic Kuramoto-Sivashinsky equation and allows the determination of the lateral width of the energy distribution deposited by the incident ions in the very-low-energy range. We show that the observed energy dependence is in agreement with the linear continuum theory under the assumption that the dominant smoothing process is due to effective ion-induced diffusion without mass transport on the surface. The controlled fabrication of semiconductor nanostructures remains a key requirement for the development of future optoelectronic and electronic devices. Although electron-beam lithography enables the fabrication of structures with nanometer dimensions, the low throughput of serial lithographic methods represents a severe bottleneck. Therefore alternative methods based on self-organization to form large arrays of well-defined quantum dots ͑QD's͒ have attracted extensive attention in the past. Up to now most of the work was based on the spontaneous growth of selforganized QD's on semiconductor surfaces in the StranskiKrastanov ͑SK͒ growth mode.1 Very recently, low-energy ion sputtering at normal incidence has been demonstrated to be an attractive alternative to SK growth, opening a promising route for the parallel fabrication of uniform semiconductor QD's ordered in a hexagonal array.2 This self-organized formation of periodic arrays of QD's during ion sputtering is based on a surface instability, i.e., the interplay between surface roughening induced by sputtering and smoothing processes on the surface. The basic mechanism has been related to physical principles underlying the formation of periodic ripple structures during ion sputtering of surfaces at oblique angles of incidence.3 These ripple patterns have been observed on different surfaces of semiconductors, 4-8 metals, 9,10 and glass. 11 The formation of ripple patterns has been investigated experimentally and theoretically in great detail 12 while the formation of regular dot arrays is not yet fully reconnoitered.In order to control the formation process for the QD's induced by ion sputtering a quantitative understanding of the formation mechanism is required. For the description of the dot formation mechanism a continuum model has been developed, which is related microscopically to the distribution function of the energy deposited by the incident ions, 3 and allows the derivation of the wavelength of the pattern. Other microscopic models relate the formation of nanostructures to the formation of surface defects and adatoms and their diffusion on the surface. 10,13 However, quantitative predictions are difficult to extract from these models. Here we report on the investigation of the energy dependence of the dot evol...

show abstract

Quantitative investigation of the O₂⁺‐induced topography of GaAs and other III–V semiconductors: An STM study of the ripple formation and suppression of the secondary ion yield change by sample rotation

Cited by 34 publications

References 20 publications

Morphology of ion-sputtered surfaces

Morphology of ion-sputtered surfaces

Wavelength tunability of ion-bombardment-induced ripples on sapphire

Energy dependence of quantum dot formation by ion sputtering

Contact Info

Product

Resources

About

Quantitative investigation of the O2+‐induced topography of GaAs and other III–V semiconductors: An STM study of the ripple formation and suppression of the secondary ion yield change by sample rotation

Cited by 34 publications

References 20 publications

Morphology of ion-sputtered surfaces

Morphology of ion-sputtered surfaces

Wavelength tunability of ion-bombardment-induced ripples on sapphire

Energy dependence of quantum dot formation by ion sputtering

Contact Info

Product

Resources

About

Quantitative investigation of the O₂⁺‐induced topography of GaAs and other III–V semiconductors: An STM study of the ripple formation and suppression of the secondary ion yield change by sample rotation