Quantitative depth profiling of an alternating Pt/Co multilayer and a Pt–Co alloy multilayer by SIMS using a Buckminsterfullerene (C60) source

Inter‐laboratory comparison: Quantitative surface analysis of thin Fe‐Ni alloy films

“…The indepth homogeneity of the Fe‐Ni alloy films was investigated by SIMS depth profiling. The SIMS depth profiles were obtained by a Cameca IMS‐4F where a commercial Buckminster fullerene C 60 + ion source (IOG‐C60‐10; Ionoptica) is interfaced to the magnetic sector SIMS instrument 11, 13. The SIMS depth profiles of the three alloy films showed homogeneous indepth distributions within the standard deviation of 0.83 atomic % of the alloy composition over a depth of 200 nm except for a short transient region at the beginning of the profiling.…”

“…The binding energies of Fe 2 p 3/2 (E b Fe ) and Ni 2 p 3/2 (E b Ni ) are 706.7 and 852.6 eV, respectively. The relative intensities of the two elements were measured from peak areas by integration of the two peak intensities after peak smoothing and background subtraction using the Shirley method 13. At KRISS, the integration ranges for the determination of peak area were from E b Fe + 9 eV to E b Fe − 5 eV and from E b Ni + 11 eV to E b Ni − 5 eV for the Fe 2 p and Ni 2 p peaks, respectively, as shown in Fig.…”

A Computational Investigation of C60 Depth Profiling of Ag: Molecular Dynamics of Multiple Impact Events

“…1,2 Their abilities of nonlinear enhancement of yield, reduced chemical damage, and reduced damage depth have opened the door to a wide array of depth profiling capabilities. [3][4][5][6][7][8][9][10][11][12] For example, it is possible to analyze multilayered structures used in the electronics/semiconductor industry, 6,13 as well as perform molecular specific depth profiles of cells and other biologically important systems. [13][14][15][16][17][18][19][20] The critical issue for quantitative interpretation of depth profiles is the interface width, a quantity that reflects how precisely one can measure a change in composition.…”

Depth profiling of anodic tantalum oxide films with gold cluster ions

“…Therefore, a cluster ion beam should, in principle, yield better depth resolution compared to an isoenergetic atomic ion beam, with the advantage increasing with increasing projectile nuclearity. A hint in that direction was indeed found for a number of metallic and semiconductor samples under bombardment with cluster ions like SF 5 + , C n − , CsC n − and C 60 + clusters 1, 8–10. In general, it was found that cluster ion beams offer improved depth resolution and a reduction in sputter‐induced topography formation.…”