Quantitative chemical lattice imaging: theory and practice

Ourmazd, A.; Baumann, F.H.; Bode, M.; Kim, Y.

doi:10.1016/0304-3991(90)90018-h

Cited by 173 publications

(59 citation statements)

References 14 publications

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“…Several effects have to be taken into account measuring the width of a strained layer from a high resolution image [16][17][18][19][20]; among them the effect of the crystal plane bending in the TEM thinned sample can produce a systematic error in the measurements [21][22][23][24][25][26]. This effect can be particularly severe in highly strained samples.…”

Section: Methodsmentioning

confidence: 99%

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

Carlino

Giannini

Tapfer

et al. 1995

Microsc. Microanal. Microstruct.

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Abstract. 2014 In this work we investigate the strain-relief mechanisms and the formation of structural defects of Si/Ge multilayers grown by molecular beam epitaxy on (100)-Si substrates. The investigated specimens differ in number of periods, period thickness, and in the Si/Ge layer thickness ratio. The structural analyses are performed by transmission electron microscopy and high-resolution X-ray diffraction. We found that a Si-Ge interdiffusion induces a broadening of the nominal thickness of the Ge layer, producing a Six Ge1-x alloy as well as a higher Ge content in the last periods of the multilayer structure. Our measurements suggest that the strain relaxation occurs in two steps: i) in each period of the multilayer the strain energy density is partially reduced by the formation of coherent islands; ii) at a certain value of the strain energy density, the shape of the coherent islands changes and the structures, partially or completely, relax the accumulated strain energy by nucleation of dislocations. The increase of the strain energy density is related to the measured monotonic increase of the Ge content as a function of the growth time.

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Section: Methodsmentioning

confidence: 99%

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

Carlino

Giannini

Tapfer

et al. 1995

Microsc. Microanal. Microstruct.

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“…The fringes near the edges were not included in the analysis [7]. Reflections 002 and 200 were used for the 100 orientation and 002 and 220 reflections for the [1][2][3][4][5][6][7][8][9][10] plot ( Fig. 1d) represent zones where the fringe spacing is constant and vortices indicate zones where the fringe spacing has changed.…”

Section: Methodsmentioning

confidence: 99%

“…In this work we have evaluated the application of the LFSM and CUSUM methods to the characterization of a complex multiquantum well laser diode heterostructure, the seven wells made of strain compensated (InAs) 2 (GaAs) 2 SL and the six barriers and waveguide made of near lattice-matched (InP) 5 (Ga x In 1−x As) 4 . The structure was investigated by HRTEM using the 90…”

Section: Introductionmentioning

confidence: 99%

Analysis of local deformations in heterostructures containing short period superlattices by high-resolution transmission electron microscopy

Quintana¹,

Golmayo²,

Dotor³

et al. 2004

Eur. Phys. J. Appl. Phys.

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Abstract. This work describes the application of the Lattice Fringe Spacing Measurement (LFSM) method to the study of complex multiquantum well heterostructures containing both low-misfit and strain compensated short period superlattices in barriers and wells, respectively. 90• -wedge cross-sectional samples have been used. The adequate choice of both experimental conditions and digitized sampling allows the whole heterostructure to be visualized and studied in a single High Resolution Transmission Electron Microscopy (HRTEM) image. Sample preparation and image processing technique are simple and inexpensive, resulting a fast procedure particularly suited for the analysis of large areas. By this way, in a single HRTEM image we have measured, in the growth direction, the lattice spacings at either side of the multiple grown interfaces as well as the period variations of both types of superlattices; in addition, we have measure on the same image the lattice strain in a direction perpendicular to the growth direction by using the LFSM and the Cumulative Sum methods. We have observed local lateral variations within the wells, with regions tensile or compressively strained, while a vestige of the grown SL remains, indicating the occurrence of a strain induced lateral composition modulation process spontaneously produced during the growth of strain compensated short-period superlattices. This is further confirmed in cross-section prepared by the tripod mechanical polisher method.PACS. 68.37.Lp Transmission electron microscopy (TEM) of surfaces, interfaces and thin films including STEM, HRTEM, etc. -68.65.Cd Superlattices (structure and non-electronic properties) -81.05.Ea III-V semiconductors: fabrication, treatment, testing and analysis

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confidence: 99%

Application of Exit-Plane Wave Function Images in High-Resolution Transmission Microscopy for Compositional Analysis of III-V Semiconductor Interfaces

Mahalingam

Eyink

Brown

et al. 2005

MAM

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Existing methods based on high-resolution transmission electron microscopy (HRTEM) for compositional analysis of III-V semiconductor interfaces are applicable only to ternary systems [1][2][3][4]. Furthermore, they require optimal specimen-thickness and imaging conditions which depend on the material system under investigation. In this work we investigate the applicability of exit-plane wave function (EPWF) images, retrieved from HRTEM images, for quantitative chemical analysis of III-V semiconductor interfaces. By using the focus variation technique for EPWF retrieval [5] in combination with factorial analysis of correspondence for quantitative analysis [6], we show that compositional profiles along the group-III and group-V sublattices can be independently extracted. The present approach is more general, enabling compostional analysis of other III-V semiconductor heterostructures, such as InGaSb/InAs and InGaP/GaAs, which exhibit intermixing in both group-III and group-V sublattices. Application of the proposed method to the analysis of interfaces in epitaxially grown Al x Ga (1-x) As/GaAs and In x Ga (1-x) Sb/InAs heterostructures yielded compositional sensitivities with standard deviations equal to 0.06 (x Al-Ga )and 0.08 (x In-Ga and x As-Sb ), respectively. The validity of this approach is verified by an image simulation study performed on model interfaces with abrupt and linear grading in the interface composition profiles.

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Quantitative chemical lattice imaging: theory and practice

Cited by 173 publications

References 14 publications

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

Analysis of local deformations in heterostructures containing short period superlattices by high-resolution transmission electron microscopy

Application of Exit-Plane Wave Function Images in High-Resolution Transmission Microscopy for Compositional Analysis of III-V Semiconductor Interfaces

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