Abstract:Existing methods based on high-resolution transmission electron microscopy (HRTEM) for compositional analysis of III-V semiconductor interfaces are applicable only to ternary systems [1][2][3][4]. Furthermore, they require optimal specimen-thickness and imaging conditions which depend on the material system under investigation. In this work we investigate the applicability of exit-plane wave function (EPWF) images, retrieved from HRTEM images, for quantitative chemical analysis of III-V semiconductor interface… Show more
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