Quantitative Characterization of Microsystem Dynamics

Abstract

Development of microelectromechanical system (MEMS) sensors for various applications requires the use of analytical and computational modeling/simulation coupled with rigorous physical measurements. This requirement has led to advancement of an approach that combines computer aided design (CAD) and multiphysics modeling/simulation tools with the state-of-the-art (SOTA) measurement methodology to facilitate reduction of high prototyping costs, long product development cycles, and time-to-market pressures while devising MEMS for a variety of applications. In this approach, a unique, fully integrated software environment for multiscale, multiphysics, high fidelity modeling of MEMS is combined with the optoelectronic laser interferometric microscope methodology for quantitative measurements. The optoelectronic methodology allows remote, noninvasive full-field-of view (FFV) measurements of deformations/motions (under operating conditions) with high spatial resolution, nanometer accuracy, and in near real-time. In this paper, both, the modeling environment (including an analytical process used to quantitatively show the influence that various parameters defining a sensor have on its dynamics — using this process dynamic characteristics of a sensor can be optimized by constraining its nominal dimensions and finding the optimum set of uncertainties in these dimensions that best satisfy design requirements/specifications) and the optoelectronic methodology are described and their applications are illustrated with representative examples demonstrating viability of the approach, combining modeling and measurements, for quantitative characterization of microsystem dynamics. These representative examples demonstrate capability of the approach described herein to quantitatively determine effects of dynamic loads on performance of selected MEMS.

Advances in optoelectronic methodology for micro- and nano-scale measurements

“…The corresponding frequencies of the three modes displayed show good correlation with the frequencies determined analytically, well within the uncertainty limits 42 . More specifically, fundamental resonance frequencies for the first three bending modes of the microcantilevers considered herein can be expressed as 14 Following procedures used to obtain representative results shown in this Section, displacements, deformations and motions of other MEMS and structures can be determined.…”

Dynamic behavior of microstructures

“…These superior electrical characteristics permit design of MEMS switched high-frequency circuits not feasible with semiconductor switches, such Quantitative interpretation of these fringe patterns reveals mode shapes included in parts (b) of Figs 8 to 10; these mode shapes were obtained directly from the OELIM measured experimental data. The corresponding frequencies of the three modes displayed show good correlation with the frequencies determined analytically, well within the uncertainty limits [26]. More specifically, the resonance frequencies for the first three bending modes of the microcantilevers considered herein can be expressed as 14 (a)…”