Quantitative analysis of tungsten, oxygen and carbon concentrations in the microcrystalline silicon films deposited by hot-wire CVD

Bourée, Jean-Éric; Guillet, J.; Grattepain, C.; Chaumont, J.

doi:10.1016/s0040-6090(03)00086-5

Cited by 9 publications

(6 citation statements)

References 12 publications

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“…The benefits of adding H 2 to the usual NH 3 /SiH 4 gas mixture include an enhanced incorporation of N into the thin film, reduced NH 3 flow rates down to 5 sccm and film conformity on the substrate [9][10][11]. In most cases, the filament temperature during the HWCVD of SiNx films were >1700 • C [1][2][3]5,[7][8][9][10][11][12], which can lead to filament metal impurities incorporated into the films [10,13].…”

Section: Introductionmentioning

confidence: 99%

Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates

Oliphant

Arendse

Muller

et al. 2013

Applied Surface Science

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We examined the chemical, structural, mechanical and optical properties of amorphous hydrogenated silicon nitride thin films deposited by hot-wire chemical vapour deposition using SiH4, NH3 and H2 gases at total flow rates below 33 sccm. Time of flight secondary ion mass spectroscopy reveal that the film surfaces consist of predominantly Si with hydrogenated Six Ny Oz species. Energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy corroborate on the N/Si ratio. Electron energy loss spectroscopy discloses that the thickness of the nitrogen rich oxidized interface between the SiNx films and the c-Si substrate decrease with an enhancing NH3 flow rate. By varying the NH3 flow rate, dense SiNx films can be realized with hydrogen content between 16 and 9 at.%, a refractive index between 3.5 and 1.9 and optical band gap ranging from 2 to 4.5 eV. The SiNx film stress is compressive for N/Si < 0.4 and tensile for higher N/Si > 0.55. Mechanisms relating the HWCVD conditions and the film structure and properties are proposed.

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Section: Introductionmentioning

confidence: 99%

Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates

Oliphant

Arendse

Muller

et al. 2013

Applied Surface Science

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“…Firstly, one may clearly see that W is incorporated in the top of the SiOC:H films. This incorporation may explain the high densities of the top layer in the XRR analyses: In general, the higher the filament temperature, the higher the density and the thicker the modified top layers [17]. The overall sputter rate (and sputter yield) strongly depends on the composition of the film.…”

Section: Discussionmentioning

confidence: 99%

Study of porogen removal by atomic hydrogen generated by hot wire chemical vapor deposition for the fabrication of advanced low-k thin films

et al. 2015

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“…There has been a report by a group at Ecole Polytechnique, on large decrease (more than two orders of magnitude) of C content in the SIMS depth profiling of µc-Si sample prepared by a hot-wire CVD reactor with stainless chamber, when an inner vessel is added inside the chamber to minimize impurity [25]. In spite of these two similar observations under the condition of µc-Si films growth with minimum/no outgassing from the chamber wall, the large increase (by two orders of magnitude) of C content towards the surface is not clear.…”

Section: Impurity Analysis Of µC-si and Poly-si Films Prepared By Pecmentioning

confidence: 99%

Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004

Li¹

2004

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Quantitative analysis of tungsten, oxygen and carbon concentrations in the microcrystalline silicon films deposited by hot-wire CVD

Cited by 9 publications

References 12 publications

Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates

Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates

Study of porogen removal by atomic hydrogen generated by hot wire chemical vapor deposition for the fabrication of advanced low-k thin films

Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004

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