Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates

Oliphant, Clive J.; Arendse, Christopher J.; Muller, T.F.G.; Knoesen, D.

doi:10.1016/j.apsusc.2013.08.075

Cited by 22 publications

(10 citation statements)

References 50 publications

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“…The Si 2p line shown in Figure is highly asymmetric and could be decomposed into several components. For the as‐received powder, the more intense component centered at 101.42 eV corresponds to silicon in a SiN 4 environment, in agreement with literature data. The shoulder at 102.59 eV corresponded to silicon oxynitride Si 2 N 2 O …”

Section: Resultssupporting

confidence: 90%

Surface modification of ultrafine silicon nitride powders by calcination

Yang

et al. 2019

Int J Applied Ceramic Tech

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Calcination was used for surface modification of ultrafine silicon nitride powders, which improved the flowability and dispersion stability of their slurries. Surface characteristics of the powder were investigated by X-ray photoelectron spectroscopy, which showed the generation of an oxide layer and partial elimination of amine groups on the particle surfaces. Ion analysis results suggested a drop in both ion conductivity and supernatant concentration after calcination. For the as-received powder, poor flowability and dispersion stability was caused by high-valence cations, which were detrimental to colloidal processing according to the Schulze-Hardy rule, and surface amine groups were also present; both of these were partly removed by calcination. The oxide layer formed on the particle surfaces hydrolyzes into silanol groups when the powder is dispersed in aqueous solutions, which was favorable for surface charging and formation of higher diffuse layer potential on the particles.These factors contributed to the improved flowability and dispersion stability of the slurries. K E Y W O R D Scalcination, oxide layer, powders, silicon nitride, slurries

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Section: Resultssupporting

confidence: 90%

Surface modification of ultrafine silicon nitride powders by calcination

Yang

et al. 2019

Int J Applied Ceramic Tech

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“…The Raman spectra from sample Si-3 contained the same lines and three additional broad lines around 400-450, 480-490, and 600-620 cm −1 . While 480-490 cm −1 line could be attributed to amorphous Si [36], the bands at 400-450 and 600-620 cm -1 looked close to the S-N vibration frequencies [37,38]. Note that the observed high level of noise for the Raman spectrum for Si-3 sample could be explained by the PL background.…”

Section: Notation Ofmentioning

confidence: 82%

Tailoring Photoluminescence from Si-Based Nanocrystals Prepared by Pulsed Laser Ablation in He-N2 Gas Mixtures

et al. 2020

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Using methods of pulsed laser ablation from a silicon target in helium (He)-nitrogen (N2) gas mixtures maintained at reduced pressures (0.5–5 Torr), we fabricated substrate-supported silicon (Si) nanocrystal-based films exhibiting a strong photoluminescence (PL) emission, which depended on the He/N2 ratio. We show that, in the case of ablation in pure He gas, Si nanocrystals exhibit PL bands centered in the “red - near infrared” (maximum at 760 nm) and “green” (centered at 550 nm) spectral regions, which can be attributed to quantum-confined excitonic states in small Si nanocrystals and to local electronic states in amorphous silicon suboxide (a-SiOx) coating, respectively, while the addition of N2 leads to the generation of an intense “green-yellow” PL band centered at 580 nm. The origin of the latter band is attributed to a radiative recombination in amorphous oxynitride (a-SiNxOy) coating of Si nanocrystals. PL transients of Si nanocrystals with SiOx and a-SiNxOy coatings demonstrate nonexponential decays in the micro- and submicrosecond time scales with rates depending on nitrogen content in the mixture. After milling by ultrasound and dispersing in water, Si nanocrystals can be used as efficient non-toxic markers for bioimaging, while the observed spectral tailoring effect makes possible an adjustment of the PL emission of such markers to a concrete bioimaging task.

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“…In addition to its perfect electrical properties, silicon nitride shows high thermal stability and mechanical strength. Refractive index, optical band gap and molecular composition of the film can be tuned depending on deposition conditions [4]. The ability to change composition of the film is required for the formation of controlled band gap nanodevices.…”

Section: Introductionmentioning

confidence: 99%

Characterization of silicon nitride layers deposited in three-electrode plasma-enhanced CVD chamber

Grigaitis¹,

Naujokaitis²,

Tumėnas³

et al. 2015

Lith. J. Phys.

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Two series of amorphous silicon nitride films were deposited using a chemical vapour deposition (CVD) reactor with two and three electrodes. Nitrogen gas and silane diluted with argon mixture (5% SiH4 + 95% Ar) were used as the working gas. The silicon nitride films were deposited at the same time on CaF2 and aluminium-coated glass substrates at 300 °C. Changing of the injected gas ratios allowed us to shift the band gap of the films in the 1.85–5.15 eV range. From AFM analysis it was found that the samples deposited in a three-electrode chamber demonstrated lower surface roughness. The electrical measurements revealed that the samples deposited in the three-electrode CVD reactor demonstrated lower leakage current and higher breakdown voltage. The composition of layers was investigated using energy-dispersive X-ray (EDS) and Fourier transform infrared (FTIR) spectroscopies. Additionally, the composition of the deposited films was evaluated from the refractive indexes, which have been estimated by fitting the spectroscopic ellipsometry data using the Tauc-Lorenz model.

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Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates

Cited by 22 publications

References 50 publications

Surface modification of ultrafine silicon nitride powders by calcination

Surface modification of ultrafine silicon nitride powders by calcination

Tailoring Photoluminescence from Si-Based Nanocrystals Prepared by Pulsed Laser Ablation in He-N2 Gas Mixtures

Characterization of silicon nitride layers deposited in three-electrode plasma-enhanced CVD chamber

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