Quantitative Analysis of Trace Metals in Silicon Nitride Films by a Vapor Phase Decomposition/Solution Collection Approach

Vereecke, Guy; Schaekers, Marc; Verstraete, K.; Arnauts, Sophia; Heyns, MM; Plante, W.

doi:10.1149/1.1393385

Cited by 19 publications

(9 citation statements)

References 9 publications

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“…The solid line shows the main reaction routes and the dashed line shows the minor reaction routes. Some of the reactions depicted in this figure also take place at the surface, because a strong hydrogen bond is formed between the HF and NH 3 produced and the boiling point of this complex molecule exceeds 500 K [24]. Finally, HF and NH 3 are formed and adsorbed on the wafer surface, on which a condensed phase is formed, so that a type of ammonium fluoride etching in the liquid phase takes place.…”

Section: Cde Technologies With Long Life Time Plasma Sourcementioning

confidence: 98%

Recent Development of Si Chemical Dry Etching Technologies

Hayashi¹

2013

J Nanomed Nanotechnol

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Chemical dry etching in wafer processing was innovated and developed in 1976 using CF 4 /O 2 downflow plasma for poly-Si etching. Thereafter, many researchers developed and reported various chemical dry etching methods. Advanced Si chemical dry etching technology was developed in 2010, using N 2 downflow plasma and NF 3 flowing to the downflow plasma area. The etchant production mechanism for this technology was explained by us. In these technologies, the plasma source is necessary to produce the etchants (F for Si etching and HF+NH 3 for SiO 2 etching). Recently, a novel Si chemical dry etching technology was innovated and developed by us without plasma source, in which F atoms generated in F 2 +NOF+FNO reaction are used for Si etching in the pressure range of 100 to 1000 Pa. The etch rate at room temperature is more than 5000 nm/min, and is dependent on the flow rate and on the distance between the gas mixing point and the wafer position. Increasing the substrate temperature, the minimum etch rate was obtained at 60 º C. Over this temperature, the etch rate increased again with increase of the substrate temperature. In the lower temperature region, the chemisorbed layer may be formed and the chemical reaction may be enhanced in this condensed layer. Increasing the temperature, this chemisorbed layer disappears around 60 º C. Over this temperature, the surface reaction mainly takes place according to Arrhenius equation. Journal of Nanomedicine & Nanotechnology J o u rna l of N a n o m ed icine & N a n o te chnolo g y

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Section: Cde Technologies With Long Life Time Plasma Sourcementioning

confidence: 98%

Recent Development of Si Chemical Dry Etching Technologies

Hayashi¹

2013

J Nanomed Nanotechnol

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“…The precise measurement of ppm-level transition metal impurity concentrations is challenging and previously their concentration in LPCVD Si 3 N 4 thin films has been measured using vapor phase decomposition and X-ray fluorescence [60]. Here, we use glow discharge mass spectroscopy (GDMS) to analyze the concentration of common transition metals in samples of unprocessed SiO 2 and Si 3 N 4 thin films.…”

Section: Materials Analysismentioning

confidence: 99%

Probing the loss origins of ultra-smooth $\mathrm{Si_3N_4}$ integrated photonic waveguides

Pfeiffer,

Liu,

Raja

et al. 2018

Preprint

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On-chip optical waveguides with low propagation losses and precisely engineered group velocity dispersion (GVD) are important to nonlinear photonic devices such as soliton microcombs, and likewise can be employed for on chip gyroscopes, delay lines or Brillouin lasers. Yet, despite intensive research efforts, nonlinear integrated photonic platforms still feature propagation losses orders of magnitude higher than in standard optical fiber. The tight confinement and high index contrast of integrated waveguides make them highly susceptible to fabrication induced surface roughness. Therefore, microresonators with ultra-high Q factors are, to date, only attainable in polished bulk crystalline, or chemically etched silica based devices, that pose however challenges for full photonic integration. Here, we demonstrate the fabrication of silicon nitride (Si 3 N 4 ) waveguides with unprecedentedly smooth sidewalls and tight confinement with record low propagation losses. This is achieved by combining the photonic Damascene process with a novel reflow process, which reduces etching roughness, while sufficiently preserving dimensional accuracy. This leads to previously unattainable mean microresonator Q factors larger than 5×10 6 for tightly confining waveguides with anomalous dispersion. Via systematic process step variation and two independent characterization techniques we differentiate the scattering and absorption loss contributions, and reveal metal impurity related absorption to be an important loss origin. Although such impurities are known to limit optical fibers, this is the first time they are identified, and play a tangible role, in absorption of integrated microresonators. Taken together, our work provides new insights in the origins of propagation losses in Si 3 N 4 waveguides and provides the technological basis for integrated nonlinear photonics in the ultra-high Q regime.

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“…When a long under-etch is required for the functionality of the BOX layer, it should be taken into account that etching using HF also etches SiRN (Williams and Muller 1996), and the thickness of the initial SiRN layer and the maximum allowable slit width should be changed if etched for a long time. In the case of vapour HF, a compound ((NH 4 ) 2 SiF 6 ) is formed that might impede proper functioning of the device and should be removed by heating up the wafer (Witvrouw et al 2000;Vereecke et al 2000). A downside of using an SOI wafer is that the maximum depth of the channels is limited by the thickness of the device layer, which can be a problem when large channels are needed.…”

Section: Buried Oxide Layermentioning

confidence: 99%

A versatile technology platform for microfluidic handling systems, part I: fabrication and functionalization

Groenesteijn

Boer

Lötters

et al. 2017

Microfluid Nanofluid

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often have to be connected using (external) fluidic interconnects. This way, the fluidic interconnects will have a relatively large volume, resulting in slow response times and requiring large sample sizes.To make the ideal integrated microfluidic handling system, one fabrication process should allow many different microfluidic devices for all kinds of applications to be integrated on the same chip. The functional channels of the devices, the interconnect channels and the required interfacing electronics should be integrated on the same substrate without restricting the design options for each device.Different applications pose different demands on the fabricated system. To avoid leakage and wear, the channel walls should be mechanically strong, chemically inert and leak tight for both liquids and gasses in a large temperature range. It should be possible to locally release the channel (completely or partially) from the substrate, e.g. for thermal isolation or freedom of movement. It is required to integrate transducer structures for actuation and measurement of the devices. This can be anything from metal tracks to piezoelectric or magnetic materials or optical waveguides. Functionalization of the inside of the channel, e.g. with a catalyst or with specific coatings for (bio)chemical reactions or adhesion should be possible. Multiple channels should be able to cross each other or run inside each other. Interface electronics should be integrated directly on the chip or package to reduce noise and other parasitic effects.To be able to transfer proof-of-concepts to commercial devices, it should not only be possible to fabricate low-volume research devices, but it should also be possible to scale up the fabrication to industrial low-cost, high-volume processing in foundries. Last, and certainly not least, it should be straightforward to design the optimal fluidic element with respect to shape and size, for any application. AbstractMany microfluidic devices are made using specialized fabrication processes, limiting the ability to integrate those devices on the same chip. In this paper, a versatile technology platform is presented that allows for integration of many different devices. It provides a method to design channels in a wide range of sizes and shapes with different functionalization options in close proximity to the fluid in the channels. The latter includes release of the channels for thermal isolation or mechanical movement and metal or piezoelectric layers for actuation and read-out. The channel walls are made using silicon-rich silicon nitride to provide durable, strong, chemically inert and thermally stable channels directly below the substrate surface .

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Quantitative Analysis of Trace Metals in Silicon Nitride Films by a Vapor Phase Decomposition/Solution Collection Approach

Cited by 19 publications

References 9 publications

Recent Development of Si Chemical Dry Etching Technologies

Recent Development of Si Chemical Dry Etching Technologies

Probing the loss origins of ultra-smooth $\mathrm{Si_3N_4}$ integrated photonic waveguides

A versatile technology platform for microfluidic handling systems, part I: fabrication and functionalization

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