Quantitative analysis of on bevel electrical junction shifts due to carrier spilling effects

Clarysse, Trudo; Vandervorst, Wilfried; Casel, A.

doi:10.1063/1.103761

Cited by 28 publications

(15 citation statements)

References 5 publications

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“…Another more important limitation is the enhanced redistribution of carriers (i.e their relocation with respect to the dopant atoms) as a result of the beveling procedure itself (usually termed "carrier spilling") [44]. This effect translates into a shift of the apparent junction position towards depths shallower than those obtained from SIMS profiles [45].…”

Section: E+19mentioning

confidence: 99%

One- and two-dimensional dopant/carrier profiling for ULSI

Vandervorst¹,

Clarysse²,

Wolf³

et al. 1998

The 1998 International Conference on Characterization and Metrology for ULSI Technology

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Section: E+19mentioning

confidence: 99%

One- and two-dimensional dopant/carrier profiling for ULSI

Vandervorst¹,

Clarysse²,

Wolf³

et al. 1998

The 1998 International Conference on Characterization and Metrology for ULSI Technology

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“…The line drawn through the measurement points is a guide to the eye based on the expected theoretical behavior. 9 Since SCM operates at very low forces, we assume that the electrical junction position measured with SCM should coincide with the values calculated from zero-field simulations. 3-left͒ in agreement with theory.…”

Section: Carrier Spillingmentioning

confidence: 99%

“…By scanning a conductive probe across the sample, topographical and electrical information can be acquired simultaneously. 9 It is also important to realize that SCM images, made on cross sections, change substantially with applied dc bias. By applying an ac bias (V ac ) between the semiconductor and the tip, small capacitance variations (10 Ϫ18 F) can be measured using a sensitive UHF capacitance sensor ͑based upon the RCA capacitance sensor 5 ͒.…”

Section: Introductionmentioning

confidence: 99%

Detailed study of scanning capacitance microscopy on cross-sectional and beveled junctions

Duhayon

Clarysse

Eyben

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inBias-induced junction displacements in scanning spreading resistance microscopy and scanning capacitance microscopy J.Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal-oxide-semiconductor field-effect transistorIn this work we have done a systematic study with scanning capacitance microscopy ͑SCM͒ on cross-sectional and beveled structures. A study was made on the practical problem of contrast reversal as well as on the effect of carrier spilling related to bevel angle, steepness and substrate concentration of the doping profile. A comparison has been made with the results achieved with spreading resistance profiling and also with theoretical predictions. Finally, the junction displacement for cross-sectional and beveled junctions is studied as a function of the applied bias. It is shown that the junction displacement is much smaller on the beveled surface after demagnification. Furthermore, the large extension of the profile along the beveled surface allows us to study the bias induced variation of the SCM signal within the depletion layer in great detail.

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“…1 In our present understanding of this so-called carrier spilling ͑or carrier dif-fusion͒ phenomenon the following two main causes have been identified. 1 In our present understanding of this so-called carrier spilling ͑or carrier dif-fusion͒ phenomenon the following two main causes have been identified.…”

Section: Introductionmentioning

confidence: 99%

Carrier spilling revisited: On-bevel junction behavior of different electrical depth profiling techniques

Clarysse

Eyben

Duhayon

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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It is well known that the electrical junction depth position measured along a beveled surface, as is routinely done in the spreading resistance probe ͑SRP͒ technique, is shallower than the corresponding metallurgical junction as seen by secondary ion mass spectrometry. The amount of on bevel junction shift ͑i.e., the difference in electrical on bevel versus metallurgical junction depth͒ in SRP has previously been attributed to a combination of material removal during the beveling ͑i.e., one-dimensional zero-field Poisson model͒ and pressure enhanced carrier spilling ͑enhanced permittivity͒. Recently the interest in the application of two-dimensional electrical characterization techniques such as scanning capacitance microscopy, with virtually zero pressure, and scanning spreading resistance microscopy, with a much smaller contact, on beveled surfaces has emerged in order to meet the needed resolutions. The data from these techniques, however, indicate that our present understanding of the carrier-spilling phenomenon is incomplete. Based on a detailed intercomparison of the depth profiles on well-calibrated, junction isolated samples, the shapes of the calibration curves, current-voltage curves, and device simulations, an improved carrier spilling model is proposed that incorporates a uniform surface state density of 5ϫ10 12 /eV/cm 2 , with a neutral ͑Fermi-pinning͒ level of 0.28 eV above mid-band gap.

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Quantitative analysis of on bevel electrical junction shifts due to carrier spilling effects

Cited by 28 publications

References 5 publications

One- and two-dimensional dopant/carrier profiling for ULSI

One- and two-dimensional dopant/carrier profiling for ULSI

Detailed study of scanning capacitance microscopy on cross-sectional and beveled junctions

Carrier spilling revisited: On-bevel junction behavior of different electrical depth profiling techniques

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