Detailed study of scanning capacitance microscopy on cross-sectional and beveled junctions

Abstract

Articles you may be interested inBias-induced junction displacements in scanning spreading resistance microscopy and scanning capacitance microscopy J.Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal-oxide-semiconductor field-effect transistorIn this work we have done a systematic study with scanning capacitance microscopy ͑SCM͒ on cross-sectional and beveled structures. A study was made on the practical problem of contrast reversal as well as on the effect of carrier spilling related to bevel angle, steepness and substrate concentration of the doping profile. A comparison has been made with the results achieved with spreading resistance profiling and also with theoretical predictions. Finally, the junction displacement for cross-sectional and beveled junctions is studied as a function of the applied bias. It is shown that the junction displacement is much smaller on the beveled surface after demagnification. Furthermore, the large extension of the profile along the beveled surface allows us to study the bias induced variation of the SCM signal within the depletion layer in great detail.

Assessing the performance of two-dimensional dopant profiling techniques

“…The main characteristics of these structures are shown in Fig. 17 Solid lines represent analogue measurements done by lab F. One can immediately see that the agreement between the two independent measurements is very good. For each structure the steepness ͑near the metallurgical junction͒, the metallurgical junction ͑MJ͒ measured with SIMS, the electrical junction ͑EJ͒ measured with SRP, and the electrical junction calculated from zero-field simulations ͑ZF͒ both on bevel and on cross section are listed.…”

Scanning Probe Microscopy on Inorganic Thin Films for Solar Cells

“…The C-V curve of a p-type semiconductor is a mirror image of that of an n-type semiconductor [10,19]. Hence, the sign of the measured dC/dV signal points to the type of majority carriers in the device, and its magnitude can be interpreted in terms of the carrier concentration [23]. Quantification and analysis of the measured signal requires detailed modeling [19], and is sometimes done by calibrating the SCM signal with similar samples of known carrier concentration [24].…”

Carrier spilling revisited: On-bevel junction behavior of different electrical depth profiling techniques

“…On the one hand, SRP and SSRM are similar in that they both rely on small highpressure ͑10 GPa͒ contacts ͑respective sizes 1-2 m versus 10-20 nm͒ to measure the local spreading resistance at low bias ͑respectively, 5 versus Ϯ100 mV͒. 13,14 Here, we only consider SCM data measured at low bias ͑0 V͒. The bias dependence ͑up to 1 V͒ of the SSRM junction position has been shown to be very limited ͑Ͻ15%͒.…”