Quantitative analysis of impurities in solar‐grade Si by photoluminescence spectroscopy around 20 K

Iwai, Takaaki; Tajima, Michio; Ogura, Atsushi

doi:10.1002/pssc.201000273

Cited by 17 publications

(28 citation statements)

References 3 publications

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“…As an indirect semiconductor, the radiative recombination through neutral dopants in silicon also requires the participation of phonons to conserve momentum. At temperatures below 20 K, the TO phonon was identified to be involved with the recombination of excitons bound to dopant atoms . At 79 K, the features associated with the recombination via neutral boron and phosphorous become much broader, as shown in Fig.…”

Section: Resultsmentioning

confidence: 96%

“…Dean et al suggested that such dopant peaks likely originated from the recombination of free electron–hole pairs through the neutral dopant atoms, rather than through the recombination of excitons bound to dopants (BE), which is commonly observed at temperatures below 20 K, the temperature range used in Refs. .…”

Section: Resultsmentioning

confidence: 99%

“…These luminescence spectroscopy measurements were all performed at the liquid helium temperature of 4.2 K, and the technique was limited to dopant concentrations below 10 15 cm −3 . Iwai et al later extended the dopant concentration range to 10 17 cm −3 by increasing the measurement temperature to 20 K. This technique has also been successfully applied to the quantification of arsenic and aluminium in silicon, performed at 4.2 K and 15–27 K .…”

Section: Introductionmentioning

confidence: 99%

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Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

Liu

Nguyen

Macdonald

2016

Physica Status Solidi (a)

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Phone: þ61 2 612 555 38, Fax: +61 2 6125 0506 Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm À2 -100 kW cm À2 . Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 Â 10 17 cm À3 and [P] below 8 Â 10 16 cm À3 .

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Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

Liu

Nguyen

Macdonald

2016

Physica Status Solidi (a)

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“…Both temperature determination methods have been used in previous works. [16][17][18] In theory, both temperature determination methods should yield the same results. In all cases of temperature determination via the full width at half maximum, the calculated temperatures are higher than the temperatures measured by the sensor.…”

Section: Determination Of the Sample Temperaturementioning

confidence: 99%

Low‐Temperature Photoluminescence Investigation of Light‐Induced Degradation in Boron‐Doped CZ Silicon

Peh

Lauer

Flötotto

et al. 2022

Physica Status Solidi (a)

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Light‐induced degradation (LID) in boron‐doped Czochralski grown (CZ) silicon is a severe problem for silicon devices such as solar cells or radiation detectors. Herein, boron‐doped CZ silicon is investigated by low‐temperature photoluminescence (LTPL) spectroscopy. An LID‐related photoluminescence peak is already found while analyzing indium‐doped p‐type silicon samples and is associated with the ASi–Sii defect model. Herein, it is investigated whether a similar peak is present in the spectra of boron‐doped p‐type CZ silicon samples. The presence of change in the photoluminescence signal intensity due to activation of the boron defect is investigated as well. Numerous measurements on boron‐doped samples are made. For this purpose, samples with four different boron doping concentrations are analyzed. The treatments for activation of the boron defect are based on the LID cycle. During an LID cycle, an additional peak or shoulder neither in the areas of the boron‐bound exciton transverse acoustic and nonphonon‐assisted peaks (BTA, BNP) nor in the area of the boron‐bound exciton transverse optical phonon‐assisted peak (BTO) is found. The defect formation also does not lead to a lower photoluminescence (PL) intensity ratio BTO(BE)/ITO(FE).

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“…In order to extend the range of [Al] which can be determined by PL towards higher concentrations, we conduct PL measurements at higher temperatures, as previously suggested for B-acceptors and P-donors in Si. 30 At higher temperatures a fraction of the Al-bound excitons are thermally dissociated from the acceptors and the freeexciton contribution to the spectrum increases. We have collected PL spectra from the same set of samples at ∼41 K and at ∼79 K. Fig.…”

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confidence: 99%

Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC

Asada

Kimoto

Ivanov

2017

Applied Physics Letters

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Previous work has shown that the concentration of shallow dopants in a semiconductor can be estimated from the photoluminescence (PL) spectrum by comparing the intensity of the bound-to-the- dopant exciton emission to that of the free exciton. In this work, we study the low-temperature PL of high-quality uncompensated Al-doped p-type 4H-SiC and propose algorithms for determining the Al-doping concentration using the ratio of the Al-bound to free-exciton emission. We use three different cryogenic temperatures (2, 41, and 79 K) in order to cover the Al-doping range from mid 10(14) cm(-3) up to 10(18) cm(-3). The Al-bound exciton no-phonon lines and the strongest free-exciton replica are used as a measure of the bound-and free-exciton emissions at a given temperature, and clear linear relationships are obtained between their ratio and the Al-concentration at 2, 41, and 79 K. Since nitrogen is a common unintentional donor dopant in SiC, we also discuss the criteria allowing one to determine from the PL spectra whether a sample can be considered as uncompensated or not. Thus, the low-temperature PL provides a convenient non-destructive tool for the evaluation of the Al concentration in 4H-SiC, which probes the concentration locally and, therefore, can also be used for mapping the doping homogeneity. Published by AIP Publishing.

Funding Agencies|Swedish Research Council (VR)

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Quantitative analysis of impurities in solar‐grade Si by photoluminescence spectroscopy around 20 K

Cited by 17 publications

References 3 publications

Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

Low‐Temperature Photoluminescence Investigation of Light‐Induced Degradation in Boron‐Doped CZ Silicon

Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC

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