Low‐Temperature Photoluminescence Investigation of Light‐Induced Degradation in Boron‐Doped CZ Silicon

Peh, Katharina; Lauer, Kevin; Flötotto, Aaron; Schulze, Dietmar; Krischok, Stefan

doi:10.1002/pssa.202200180

Cited by 4 publications

(3 citation statements)

References 21 publications

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“…This has been highlighted very recently in the literature on analysis of low‐temperature PL spectra for B‐doped Si samples, and a new calibration curve for B in Si has been obtained based on a sophisticated fitting model which distinguishes the

F E_{\text{TO}}

and

F E_{\text{LO}}

peaks for assessment of the actual measurement temperature. [ 39 ]…”

Section: Resultsmentioning

confidence: 99%

“…This has been highlighted very recently in the literature on analysis of low-temperature PL spectra for B-doped Si samples, and a new calibration curve for B in Si has been obtained based on a sophisticated fitting model which distinguishes the FE TO and FE LO peaks for assessment of the actual measurement temperature. [39] Table 4 shows the parameters extracted from a single exponential fit of the power-dependent intensity ratio data, shown in Figure 5. Note that the decay constant, ρ, is nearly identical for both ratios.…”

Section: Power Dependence Of Pl Intensity Ratiomentioning

confidence: 99%

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Determination of Gallium Concentration in Silicon from Low‐Temperature Photoluminescence Analysis

Abdul Fattah,

Jacobs,

Markevich

et al. 2024

Solar RRL

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Increasing our understanding of the electronic properties of gallium (Ga) in silicon (Si) used nowadays to manufacture p‐type Si solar cells is of key technological importance. In this contribution, the results of the effect of Ga concentration on the low‐temperature photoluminescence (PL) spectra in crystalline Si are reported. The Ga‐doped Si samples studied have negligible boron (B) concentrations, which can complicate spectral analysis of the bound exciton (BE) lines. We analyse the split Ga BE ground state at T = 10 K and compare the PL intensity ratios for the BE to free exciton (FE) peaks. By comparing these to known Ga concentrations, derived from capacitance‐voltage measurements, we establish an all‐optical (PL) calibration curve for the quantification of Ga concentration in Si. The effects of both temperature and excitation power on the PL intensity ratios are also studied. By combining the temperature‐induced changes in the PL intensity ratios with the calibration curve at 10 K, a calibration function has been determined. We found that the decay rates of the PL intensity ratios as a function of excitation power are independent of the chosen (split) BE peak. The major benefits of this method and its limitations are discussed.This article is protected by copyright. All rights reserved.

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F E_{\text{TO}}

and

F E_{\text{LO}}

peaks for assessment of the actual measurement temperature. [ 39 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Power Dependence Of Pl Intensity Ratiomentioning

confidence: 99%

Determination of Gallium Concentration in Silicon from Low‐Temperature Photoluminescence Analysis

Abdul Fattah,

Jacobs,

Markevich

et al. 2024

Solar RRL

View full text Add to dashboard Cite

show abstract

“…[2,13] We have already used this method in our previous work to determine the sample temperatures. [15] In the following, we will describe the method to obtain an independent calibration function for boron-doped samples in more detail.…”

Section: Determination Of the Calibration Linementioning

confidence: 99%

Calibration of Low‐Temperature Photoluminescence of Boron‐Doped Silicon with Increased Temperature Precision

Peh,

Flötotto,

Lauer

et al. 2023

Physica Status Solidi (b)

Self Cite

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Low‐temperature photoluminescence spectroscopy enables the determination of the dopant concentration of shallow impurities in silicon. This measurement method is therefore well suited for identifying and analyzing dopants (intentional impurities in silicon). A method is presented which allows the determination of the boron concentration in silicon in a range from to at temperatures from 4.2 to 20 K with increased temperature accuracy. This method requires only one calibration function for the photoluminescence intensity ratio of the boron‐bound exciton and the free exciton . The measurement temperature is obtained from the intrinsic silicon photoluminescence line of free excitons () using a fitting method, which distinguishes the and components of the free exciton peak. The determined calibration function is . The obtained exciton binding energy to boron, , agrees well with literature data.

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Light‐Induced Degradation Transition Energy Barrier Measured by Photoluminescence Spectra in Si:In

Peh,

Bratek,

Lauer

et al. 2024

Physica Status Solidi (a)

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The impact of light‐induced degradation (LID) treatments is investigated using low‐temperature photoluminescence in Si:In. A feature called as the P‐line, located at 1.118 eV, provides information on the decisive energy barrier for the LID effect. The intensity of the P‐line can be reproducibly influenced by illumination and annealing treatments. The decay of the P‐line after quenching, illumination, and moderate annealing of the silicon samples is measured as function of time and annealing temperature. Both indium‐doped as‐grown Czochralski and indium implanted float‐zone silicon wafers are examined and their behavior is compared. Based on these measurements, an energy barrier for the P‐line defect transition is calculated. The LID defect model is used to discuss the results.

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Low‐Temperature Photoluminescence Investigation of Light‐Induced Degradation in Boron‐Doped CZ Silicon

Cited by 4 publications

References 21 publications

Determination of Gallium Concentration in Silicon from Low‐Temperature Photoluminescence Analysis

Determination of Gallium Concentration in Silicon from Low‐Temperature Photoluminescence Analysis

Calibration of Low‐Temperature Photoluminescence of Boron‐Doped Silicon with Increased Temperature Precision

Light‐Induced Degradation Transition Energy Barrier Measured by Photoluminescence Spectra in Si:In

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