Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron-beam-induced current and its derivative: Determination of diffusion lengths in the low micron and submicron ranges

Luke, Keung L.; Roos, O. Von; Cheng, Li‐Jen

doi:10.1063/1.334382

Cited by 59 publications

(17 citation statements)

References 11 publications

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“…From the EBIC line scans, we calculated effective diffusion lengths, L n ¼ 1.9±0.1 mm and L p ¼ 1.5±0.2 mm (Supplementary Fig. 2) [17][18][19] . These values are similar to those calculated recently by Stranks et al 20 by modelling their timeresolved photoluminescence and absorption experimental data.…”

Section: Resultsmentioning

confidence: 99%

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI3−xClx perovskite solar cells

et al. 2014

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Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p-and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains.

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Section: Resultsmentioning

confidence: 99%

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI3−xClx perovskite solar cells

et al. 2014

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“…The excitation bulb size at energies less than 10 keV is less than the depletion width of the p - n junction (which is approximately 1 μm ), so that the reduced efficiency is not the result of an extended excitation profile [21]. As discussed in the introduction, the observation of less than 100 % collection efficiency for excitations in the depletion region violates assumptions of previous EBIC models, motivating the models we present in the next sections.…”

Section: Methodsmentioning

confidence: 99%

Depletion region surface effects in electron beam induced current measurements

Haney

Yoon

Gaury

et al. 2016

Journal of Applied Physics

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Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the p-n junction depletion region result in perfect charge collection efficiency. However we find that in CdTe and Si samples prepared by focused ion beam (FIB) milling, there is a reduced and nonuniform EBIC lineshape for excitations in the depletion region. Motivated by this, we present a model of the EBIC response for excitations in the depletion region which includes the effects of surface recombination from both charge-neutral and charged surfaces. For neutral surfaces we present a simple analytical formula which describes the numerical data well, while the charged surface response depends qualitatively on the location of the surface Fermi level relative to the bulk Fermi level. We find the experimental data on FIB-prepared Si solar cells is most consistent with a charged surface, and discuss the implications for EBIC experiments on polycrystalline materials.

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“…It has been shown by Luke et al 17 that the difference between a circle and square generation volume is insignificant when the size of the generation volume is sufficiently small as compared with the minority carrier diffusion length. The size of the probes is assumed to be very small so that it only consists of a single mesh node on the surface.…”

Section: Verificationmentioning

confidence: 99%

The detection of electron-beam-induced current in junctionless semiconductor

Tan

Ong

2010

Review of Scientific Instruments

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The scanning electron microscope is a versatile tool and its electron beam techniques have been widely used in semiconductor material and device characterizations. One of these electron beam techniques is the electron-beam-induced current (EBIC) technique. One of the limitations of the conventional EBIC technique is that it requires charge collecting junctions which may not be readily available in junctionless samples such as bare substrates unless some special sample preparation procedure such as the fabrication of a diffused junction is done on the junctionless sample. In this paper, the technique of detecting EBIC current in junctionless samples with the use of a two-point probe is presented. It is found that the EBIC current is independent from its physical parameter when the sample thickness is greater than 4L; the width to the right of probe 2 and the width to the left of probe 1 are greater than 2L and 8L, respectively. The parameters affecting this technique of detecting the EBIC current such as the depth of the generation volume, probe spacing, and the applied bias are also discussed in this paper. A commercially available two-dimensional device simulator was used to verify this technique.

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Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron-beam-induced current and its derivative: Determination of diffusion lengths in the low micron and submicron ranges

Cited by 59 publications

References 11 publications

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI3−xClx perovskite solar cells

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI3−xClx perovskite solar cells

Depletion region surface effects in electron beam induced current measurements

The detection of electron-beam-induced current in junctionless semiconductor

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