Quantification of Schottky barrier height and contact resistance of a Au electrode on multilayer WSe2

Jung, Dae Hyun; Kim, TaeWan

doi:10.1007/s40042-021-00355-0

Cited by 4 publications

(3 citation statements)

References 17 publications

(12 reference statements)

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“…4d as a function of metal work function (WF). This plots includes our experimental results, as well as extractions of SBH from previous works on WSe 2 using different metal contacts 17,23,[38][39][40][41] . A blue dotted line labeled with slope S = 1 illustrates the ideal case at the Schottky-Mott limit 42 , where a change in WF translates directly to a chance in SBH.…”

Section: Analysis Of Schottky Barriersmentioning

confidence: 99%

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

Patoary

Xie

Zhou

et al. 2023

Sci Rep

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This paper provides comprehensive experimental analysis relating to improvements in the two-dimensional (2D) p-type metal–oxide–semiconductor (PMOS) field effect transistors (FETs) by pure van der Waals (vdW) contacts on few-layer tungsten diselenide (WSe2) with high-k metal gate (HKMG) stacks. Our analysis shows that standard metallization techniques (e.g., e-beam evaporation at moderate pressure ~ 10–5 torr) results in significant Fermi-level pinning, but Schottky barrier heights (SBH) remain small (< 100 meV) when using high work function metals (e.g., Pt or Pd). Temperature-dependent analysis uncovers a more dominant contribution to contact resistance from the channel access region and confirms significant improvement through less damaging metallization techniques (i.e., reduced scattering) combined with strongly scaled HKMG stacks (enhanced carrier density). A clean contact/channel interface is achieved through high-vacuum evaporation and temperature-controlled stepped deposition providing large improvements in contact resistance. Our study reports low contact resistance of 5.7 kΩ-µm, with on-state currents of ~ 97 µA/µm and subthreshold swing of ~ 140 mV/dec in FETs with channel lengths of 400 nm. Furthermore, theoretical analysis using a Landauer transport ballistic model for WSe2 SB-FETs elucidates the prospects of nanoscale 2D PMOS FETs indicating high-performance (excellent on-state current vs subthreshold swing benchmarks) towards the ultimate CMOS scaling limit.

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Section: Analysis Of Schottky Barriersmentioning

confidence: 99%

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

Patoary

Xie

Zhou

et al. 2023

Sci Rep

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“…Due to its unique photoelectric properties [1][2][3][4][5][6][7][8] , including layer-modulated bandgaps, moderate mobility 2 , a high on-off ratio 9 , and a noticeable spin-orbit coupling effect 1 , the monolayer transition-metal dichalcogenide (TMDC) WSe 2 has recently garnered signi cant interest in the elds of atomically thin electronics and optoelectronics [10][11][12][13] . The utilization of monolayer WSe 2 , whether in its intrinsic form or as part of tailored heterostructures hybridized with other materials, substantially enhances the performance of related optoelectronic devices and imparts a range of unique features to them 9 .…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of the Dielectric Function and Critical Points of Monolayer WSe2

Nguyen,

Le,

Kim

et al. 2024

Preprint

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Monolayer materials typically display intriguing temperature-dependent dielectric and optical properties, which are crucial for improving the structure and functionality of associated devices. Due to its unique photoelectric capabilities, monolayer WSe2 has recently received a lot of attention in the fields of atomically thin electronics and optoelectronics. In this work, we focus on the evolution of the temperature-dependent dielectric and optical properties of 2D WSe2 over energies from 0.74 to 6.40 eV and temperatures from 40 K to 350 K. We analyze second derivatives with respect to energy to locate the critical points (CP). The dependence of the observed CP energies on temperature is consistent with the alternative domination of the declining exciton binding energy as the temperature increases.

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“…Under forward bias voltages, usually, at room and above temperatures, thermionic emission (TE) mechanism is dominated for intermediate doping concentration in Schottky barrier diodes [3][4][5][6][7][8][9]. While, tunneling mechanism such as field emission (FE) and thermionic-field emission (TFE) will become dominant in low temperatures and high doping concentration [10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Validity of the Padovani–Stratton formulas for analysis of reverse current–voltage characteristics of 4H–SiC Schottky barrier diodes

Latreche¹

2019

Semicond. Sci. Technol.

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In this present study, we test the accuracy of the Padovani-Stratton models in terms of the percent error in the barrier height extracted by this model from the reverse characteristics I-V simulated by the Tsu-Esaki model over a range −1000 V at room temperature. The thermionic field emission model without image force barrier lowering is much less accurate for low doping concentration (<10 15 cm −3 ), in particular at low reverse bias voltages (<−200 V). While the field emission model is less accurate for high doping concentrations (>10 17 cm −3 ) in particular for high reverse bias voltages. For medium doping concentration, thermionic field emission or field emission models provide an acceptable accurate for medium and high reverse bias voltages (>−100 V), however, it is less accurate at lower reverse bias voltages (<−100 V) and the best accuracy is occurred at about 10 16 cm −3 . When the Padovani-Stratton models is combined with image force barrier lowering model, the percent error in extracted barrier height takes large values; hence, it is inaccurate on entire range bias.

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Quantification of Schottky barrier height and contact resistance of a Au electrode on multilayer WSe2

Cited by 4 publications

References 17 publications

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

Temperature Dependence of the Dielectric Function and Critical Points of Monolayer WSe2

Validity of the Padovani–Stratton formulas for analysis of reverse current–voltage characteristics of 4H–SiC Schottky barrier diodes

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