Quantification in trace and ultratrace analyses using glow discharge techniques: round robin test on pure copper materials

Kasik, Martin; Venzago, Cornel; Dorka, Roland

doi:10.1039/b300025g

Cited by 35 publications

(16 citation statements)

References 14 publications

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“…The combination of d.c.-glow discharge and mass spectrometry has become a standard tool for ultra trace analysis 3 of conducting homogeneous material, using sequential highresolution mass spectrometers. Using ToF mass spectrometers has the advantage of a simultaneous detection of all masses of interest, which makes the technique suitable for the analysis of thin interfaces, thin films and surfaces.…”

Section: Introductionmentioning

confidence: 99%

Pulsed r.f.‐glow‐discharge time‐of‐flight mass spectrometry for fast surface and interface analysis of conductive and non‐conductive materials

Hohl

Kanzari

Michler

et al. 2006

Surface & Interface Analysis

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Glow discharge (GD) is a highly specialised source that especially meets the requirements for accuracy, simplicity and speed for content depth profiling and bulk analysis in both optical emission (OES) and mass spectrometry (MS). The pulsed radio frequency GD source has the potential for both elemental and molecular analysis of conductive and non-conductive materials. To exploit the information delivered by pulsed radio frequency (r.f.)-GD sources, fast sampling is required, and is available only through timeof-flight mass spectrometry (ToF-MS). Compared to optical glow discharge (GD-OES) instrumentation, a GD-ToF-MS system shows much simpler spectra, lower background signals and lower detection limits. The presented new r.f.-GD-ToF-MS system is a successful combination of a commercial high-end glow discharge instrument and an extremely fast and high-resolution time-of-flight mass spectrometer. This new instrument was applied to analyse conductive and non-conductive materials like anodic thin films. We could resolve 2-nm Cr makers in aluminium oxide layers and measure trace elements in ultra thin titanium oxide films. Furthermore, we show the potential of the pulsed mode to separate analyte species from elements originating from residual gas.

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Section: Introductionmentioning

confidence: 99%

Pulsed r.f.‐glow‐discharge time‐of‐flight mass spectrometry for fast surface and interface analysis of conductive and non‐conductive materials

Hohl

Kanzari

Michler

et al. 2006

Surface & Interface Analysis

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show abstract

“…The gas flow rate and the arc length were maintained respectively as 5 l/min and 15 mm. Glow discharge mass spectrometry (GDMS, VG9000; Thermo Elemental) is a powerful solid-state analytical technique that provides reliable quantitative concentrations of most elements up to levels around 0.01 ppm [5,6]. This method was used for precise analyses of impurity contents in the specimens before and after plasma arc melting.…”

Section: Methodsmentioning

confidence: 99%

Thermodynamic estimation of hydride formation during hydrogen plasma arc melting

Elanski

Lim

Mimura

et al. 2007

Journal of Alloys and Compounds

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“…The impurity analysis of Hf films as well as the Hf target is carried out by means of glow discharge mass spectrometry (GDMS VG-9000: VG Elemental) and secondary ion mass spectrometry (ULVAC-PHI SIMS 6600) using a Cs þ ion beam (5 kV and 10 nA) or an O 2 þ ion beam (5 kV and 50 nA). Although the typical discharge voltage and current of dc GDMS is 1 kV and 3 mA for bulk materials, 7) 1 kV and 1 mA is used for all samples to obtain a sufficient analytic time for thin Hf films. Figure 1 shows X-ray diffraction patterns of the samples deposited at V s ¼ 0, À50, and À100 V. In the case of the zero bias voltage, a weak Hf(002) peak is observed.…”

Section: Methodsmentioning

confidence: 99%

Influence of Substrate Bias Voltage on the Impurity Concentrations in Hf Films Deposited by Ion Beam Deposition Method

et al. 2006

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Hf films have been deposited on Si(100) substrate with or without a substrate bias voltage using a non-mass separated ion beam deposition (IBD) method. Secondary ion mass spectrometry (SIMS) and glow discharge mass spectrometry (GDMS) have been used to determine impurity concentrations of Hf films and a Hf target. By the SIMS results with Cs þ and O 2 þ ion beams, the Hf film deposited at V s ¼ 0 V contains more impurities than the Hf film deposited at V s ¼ À50 V. In addition, from GDMS results for the Hf target and the Hf films deposited at V s ¼ 0 and À50 V, almost all the impurities have reduced by applying a negative substrate bias voltage. It means that applying a negative bias voltage to the substrate can decrease the impurity concentrations in Hf films.

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Quantification in trace and ultratrace analyses using glow discharge techniques: round robin test on pure copper materials

Cited by 35 publications

References 14 publications

Pulsed r.f.‐glow‐discharge time‐of‐flight mass spectrometry for fast surface and interface analysis of conductive and non‐conductive materials

Pulsed r.f.‐glow‐discharge time‐of‐flight mass spectrometry for fast surface and interface analysis of conductive and non‐conductive materials

Thermodynamic estimation of hydride formation during hydrogen plasma arc melting

Influence of Substrate Bias Voltage on the Impurity Concentrations in Hf Films Deposited by Ion Beam Deposition Method

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