Quality-enhanced GaAs layers grown on substrates by metalorganic chemical vapor deposition

Kim, K.S.; Kim, J.-H.; Lím, D.; Yang, Gye Mo; Kim, J.Y.; Lee, H.J.

doi:10.1016/s0022-0248(97)00135-8

Cited by 7 publications

(3 citation statements)

References 14 publications

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“…This system can be used in a wide range of practical applications including photonic [1,2,3,4] and electronic [5] devices. It can also be used as an intermediate substrate for growing GaAs [6,7] or GaP [8] films on silicon.…”

Section: Introductionmentioning

confidence: 99%

Global transition path search for dislocation formation in Ge on Si(001)

Maras

Trushin

Stukowski

et al. 2016

Computer Physics Communications

350

138

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Global optimization of transition paths in complex atomic scale systems is addressed in the context of misfit dislocation formation in a strained Ge film on Si(001). Such paths contain multiple intermediate minima connected by minimum energy paths on the energy surface emerging from the atomic interactions in the system. The challenge is to find which intermediate states to include and to construct a path going through these intermediates in such a way that the overall activation energy for the transition is minimal. In the numerical approach presented here, intermediate minima are constructed by heredity transformations of known minimum energy structures and by identifying local minima in minimum energy paths calculated using a modified version of the nudged elastic band method. Several mechanisms for the formation of a 90• misfit dislocation at the Ge-Si interface are identified when this method is used to construct transition paths connecting a homogeneously strained Ge film and a film containing a misfit dislocation. One of these mechanisms which has not been reported in the literature is detailed. The activation energy for this path is calculated to be 26% smaller than the activation energy for half loop formation of a full, isolated 60• dislocation. An extension of the common neighbor analysis method involving characterization of the geometrical arrangement of second nearest neighbors is used to identify and visualize the dislocations and stacking

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Section: Introductionmentioning

confidence: 99%

Global transition path search for dislocation formation in Ge on Si(001)

Maras

Trushin

Stukowski

et al. 2016

Computer Physics Communications

350

138

View full text Add to dashboard Cite

show abstract

“…It is used in optoelectronics and for creating high speed electronic components [7][8][9]. It is also an important substrate for GaAs growth on silicon [10,11]. The Ge lattice constant is around 4% larger than that of Si, so a perfect, coherent film can only grow up to a few monolayers.…”

Section: Introductionmentioning

confidence: 99%

Minimum energy path for the nucleation of misfit dislocations in Ge/Si(0 0 1) heteroepitaxy

Trushin

Maras

Stukowski

et al. 2016

Modelling Simul. Mater. Sci. Eng.

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A possible mechanism for the formation of a 90 • misfit dislocation at the Ge/Si(001) interface through homogeneous nucleation is identified from atomic scale calculations where a minimum energy path connecting the coherent epitaxial state and a final state with a 90 • misfit dislocation is found using the nudged elastic band method. The initial path is generated using a repulsive bias activation procedure in a model system including 75000 atoms. The energy along the path exhibits two maxima in the energy. The first maximum occurs as a 60 • dislocation nucleates. The intermediate minimum corresponds to an extended 60 • dislocation. The subsequent energy maximum occurs as a second 60 • dislocation nucleates in a complementary, mirror glide plane, simultaneously starting from the surface and from the first 60 • dislocation. The activation energy of the nucleation of the second dislocation is 30% lower than that of the first one showing that the formation of the second 60 • dislocation is aided by the presence of the first one. The simulations represent a step towards unraveling the formation mechanism of 90 • dislocations, an important issue in the design of growth procedures for strain released Ge overlayers on Si(100) surfaces, and more generally illustrate an approach that can be used to gain insight into the mechanism of complex nucleation paths of extended defects in solids.

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“…The large lattice mismatch, different thermal expansion coefficients and antiphase boundary formation (polar on non-polar material growth) create formidable challenges. Several laboratories have reported the successful growth of GaAs on Si using tilt substrate (1). However, direct growth of the InAs MHEMT structure on Si substrate is very difficult because of large lattice mismatch (12%) between InAs and the Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Growth of Strain InAs-Channel Quantum Well FETs on Si Substrate Using SiGe buffer

et al. 2008

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The growth of the AlGaSb/InAs quantum well field effect transistor(QWFET) epitaxial structure on the Si substrate has been investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown AlGaSb/AlSb/GaAs were used to accommodate the strain induced by the large lattice mismatch between the AlGaSb/InAs QWFET structure and the Si substrate. A very high room-temperature electron mobility of 27300 cm 2 /V s was achieved. Strained QWFET was also grown on the GaAs substrate, it is found that the strained QWFET grown on the Si substrate has higher electron mobility due to high strain induced in this structure.

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Quality-enhanced GaAs layers grown on substrates by metalorganic chemical vapor deposition

Cited by 7 publications

References 14 publications

Global transition path search for dislocation formation in Ge on Si(001)

Global transition path search for dislocation formation in Ge on Si(001)

Minimum energy path for the nucleation of misfit dislocations in Ge/Si(0 0 1) heteroepitaxy

Growth of Strain InAs-Channel Quantum Well FETs on Si Substrate Using SiGe buffer

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