Quality control of as-cut multicrystalline silicon wafers using photoluminescence imaging for solar cell production

Haunschild, Jonas; Glatthaar, Markus; Demant, Matthias; Nievendick, Jan; Motzko, Markus; Rein, Stefan; Weber, E. R.

doi:10.1016/j.solmat.2010.06.003

Cited by 88 publications

(57 citation statements)

References 20 publications

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“…The presence of higher lifetime denuded zones around structural defects in the as-grown material (see, e.g., [34]) is a potential metric to determine whether higher temperature diffusion will be beneficial. When metals are the principal lifetimelimiting defect in as-grown materials, nucleation and precipitate growth during cooldown from crystallization leads to internal gettering near structural defects, generating higher lifetimes in areas rich with metal impurities and structural defects [29], [35].…”

Section: B When To Apply Higher Gettering Temperaturesmentioning

confidence: 99%

Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon

Fenning

Zuschlag

Hofstetter

et al. 2014

IEEE J. Photovoltaics

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Abstract-Phosphorus diffusion gettering of multicrystalline silicon solar cell materials generally fails to produce material with minority-carrier lifetimes that approach that of gettered monocrystalline wafers, due largely to higher levels of contamination with metal impurities and a higher density of structural defects. Higher gettering temperatures should speed the dissolution of precipitated metals by increasing their diffusivity and solubility in the bulk, potentially allowing for improved gettering. In this paper, we investigate the impact of gettering at higher temperatures on low-purity multicrystalline samples. To analyze the gettering response, we measure the spatially resolved lifetime and interstitial iron concentration by microwave photoconductance decay and photoluminescence imaging, and the structural defect density by Sopori etching and large-area automated quantification. Higher temperature phosphorus diffusion gettering is seen to improve metal-limited multicrystalline materials dramatically, especially in areas of low etch pit density. In areas of high as-grown dislocation density in the multicrystalline materials, it appears that higher temperature phosphorus diffusion gettering reduces the etch pit density, but leaves higher local concentrations of interstitial iron, which degrade lifetime.

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Section: B When To Apply Higher Gettering Temperaturesmentioning

confidence: 99%

Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon

Fenning

Zuschlag

Hofstetter

et al. 2014

IEEE J. Photovoltaics

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“…32,33) From Eq. (1), it can be seen that the band-edge emission intensity I and minority carrier lifetime τ eff have a proportional relationship.…”

Section: Experimental Methodsmentioning

confidence: 99%

Evaluation of oxygen precipitation behavior in n-type Czochralski-Si for photovoltaic by infrared tomography: Effects of carbon concentration and annealing process conditions

Kinoshita

Kojima

Kobayashi

et al. 2018

Jpn. J. Appl. Phys.

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In this study, we evaluated the effects of carbon and annealing process conditions on the oxygen precipitation in an n-type Czochralski (Cz) wafer for solar cells by infrared light scattering tomography (IR-LST). It was confirmed that precipitates grow larger and denser as carbon concentration increase. Thus, carbon promotes oxygen precipitation. We also evaluated the effect of oxygen precipitation on the minority carrier lifetime by photoluminescence (PL) imaging. It was confirmed that the interface between the precipitate and the Si matrix is a dominant recombination center since the surface area of the precipitate obtained by IR-LST measurement and the PL intensity show good correlation. In addition, it was also confirmed that carbon is involved in the supply of interstitial oxygen to precipitates through the formation and extinction of the thermal donor. We believe that it is important to understand and control the effect of carbon of controlling the oxygen precipitation behavior.

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“…Block-cast mc-Si wafers exhibit areas of reduced lifetime around the wafer edges owing to impurities diffusing from the crucible wall into the silicon melt during solidification. At the boundaries, different grains meet and strain fields attract contamination, leading to an increased recombination activity [25]. Dissolved iron, iron complexes, and precipitates are known to introduce deep levels in the band gap, thereby increasing the carrier recombination rate.…”

Section: Impact Of Dislocations On the Performance Of Si Solar Cellsmentioning

confidence: 99%

“…Using PL imaging, the lifetime can be acquired with high spatial resolution. The generation of dislocations during crystal growth and areas of reduced lifetime were detected at the edges of the crystallization crucible and near the top or bottom of a brick in the line [25]. MDP and surface photovoltage measurement are established techniques for the measurement of FeB concentration.…”

Section: Indirect Diagnosis Of Dislocationsmentioning

confidence: 99%

An insight into dislocation density reduction in multicrystalline silicon

Woo

Bertoni

Choi

et al. 2016

Solar Energy Materials and Solar Cells

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Quality control of as-cut multicrystalline silicon wafers using photoluminescence imaging for solar cell production

Cited by 88 publications

References 20 publications

Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon

Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon

Evaluation of oxygen precipitation behavior in n-type Czochralski-Si for photovoltaic by infrared tomography: Effects of carbon concentration and annealing process conditions

An insight into dislocation density reduction in multicrystalline silicon

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