Quality assessment of chalcopyrite thin films using Raman spectroscopy

Rudigier, E.; Álvarez-Garcı́a, J.; Luck, I.; Klaer, J.; Scheer, Roland

doi:10.1016/s0022-3697(03)00154-9

Cited by 21 publications

(21 citation statements)

References 8 publications

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“…One is the desired CIS-chalcopyrite (CH) structure. The existence of CA structural domains hinders the carrier transport and therefore reduces the performance of the resulting devices [29,30,38]. Because of the extremely small difference in the formation energy, roughly 2 meV/atom, between CH and CA, the coexistence of the CH and CA easily occurs [37].…”

Section: Resultsmentioning

confidence: 99%

“…However, depending on the sulfurization temperature and the Cu/In ratio, the CA/(CA + CH) peak intensity ratio varies, as shown in Figure 3. CIS films with a smaller FWHM have been reported to give a higher cell efficiency [29]. The broadened Raman peaks near 236 cm À1 are contributed by the E/B2 modes of the CH structure [39].…”

Section: Resultsmentioning

confidence: 99%

“…The existence of CH and CA structures can only be conveniently identified using Raman spectroscopy [23]. The existence of CA structural domains hinders the carrier transport and therefore reduces the performance of the resulting devices [29,30,38]. Raman spectra show that the CA structure exists in all the films obtained.…”

Section: Resultsmentioning

confidence: 99%

“…The Cu/In is a key processing parameter that affects, for example, the amount of vacancies and therefore the solar cell efficiency [24][25][26][27]. In fact, various defects are known to affect the solar cell efficiency [24][25][26][27][28][29][30][31][32][33][34]. However, for the subject solar cell, the effect of such a processing parameter (the Cu/In ratio) on the structural characteristics (the defects) is nearly unknown.…”

Section: Introductionmentioning

confidence: 99%

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Effects of sulfurization and Cu/In ratio on the performance of the CuInS₂solar cell

Tsai

Mishra

et al. 2013

Int. J. Energy Res.

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SUMMARY Photovoltaic CuInS2 (CIS) thin films were prepared from thermally evaporated Cu/In precursors, having various Cu/In ratios, under different sulfurization conditions. The sulfurization was carried out in a quartz tube furnace under a steady or flowing H2S/Ar gas mixture at various temperatures ranging from 450 to 550 °C. The effects of the Cu/In ratio and sulfurization condition on the grain size, surface morphology, surface roughness, microstructure and defect formation of the resulting CIS films were examined. It was found that the effects depend on the processing conditions. Particularly, we show that sub‐bandgap generated defects can be inferred by photoluminescence data. Selected CIS thin films were used as absorber layers for the fabrication of thin film solar cells. The best solar cell efficiency of 6.29% was obtained from the 500 °C‐sulfurized absorber layer having a Cu/In ratio of 1.8. Effect of absorber layer characteristics on the cell efficiency was also discussed. Copyright © 2013 John Wiley & Sons, Ltd.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effects of sulfurization and Cu/In ratio on the performance of the CuInS₂solar cell

Tsai

Mishra

et al. 2013

Int. J. Energy Res.

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“…8. The first order Raman scattering of a crystalline material with cubic structure usually shows two peaks corresponding to the transverse optic (TO) and longitudinal optic (LO) zone-centre phonon modes [26]. The observed peaks at about 206.8-207.0 and 411.1-412.1 cm −1 are assigned to the first order and second order ZnTe LO phonon scattering respectively.…”

Section: Thickness (Nm)mentioning

confidence: 99%

Effect of thickness on the microstructural, optoelectronic and morphological properties of electron beam evaporated ZnTe films

Balu

Nagarethinam

Thayumanavan

et al. 2010

Journal of Alloys and Compounds

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Postdeposition Sulfurization of CuInSe₂ Solar Absorbers by Employing Sacrificial CuInS₂ Precursor Layers

Khavari

Saini

Keller

et al. 2022

Physica Status Solidi (a)

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Herein, a new route of sulfur grading in CuInSe2 (CISe) thin‐film solar absorbers by introducing an ultrathin (<50 nm) sacrificial sputtered CuInS2 (CIS) layer on top of the CISe. Different CIS top layer compositions (Cu‐poor to Cu‐rich) are analyzed, before and after a high‐temperature treatment in selenium (Se)‐ or selenium+sulfur (SeS)‐rich atmospheres. An [S]/([S] + [Se]) grading from the surface into the bulk of the Se‐ and SeS‐treated samples is observed, and evidence of the formation of a mixed CuIn(S,Se)2 phase by Raman analysis and X‐ray diffraction is provided. The optical bandgap from quantum efficiency measurements of solar cells is increased from 1.00 eV for the CISe reference to 1.14 and 1.30 eV for the Se‐ and SeS‐treated bilayer samples, respectively. A ≈150 mV higher VOC is observed for the SeS‐treated bilayer sample, but the cell exhibits blocking characteristics resulting in lower efficiency as compared with the CISe reference. This blocking is attributed to an internal electron barrier at the interface to the sulfur‐rich surface layer. The difference in reaction routes and possible ways to improve the developed sulfurization process are discussed.

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Quality assessment of chalcopyrite thin films using Raman spectroscopy

Cited by 21 publications

References 8 publications

Effects of sulfurization and Cu/In ratio on the performance of the CuInS₂solar cell

Effects of sulfurization and Cu/In ratio on the performance of the CuInS₂solar cell

Effect of thickness on the microstructural, optoelectronic and morphological properties of electron beam evaporated ZnTe films

Postdeposition Sulfurization of CuInSe₂ Solar Absorbers by Employing Sacrificial CuInS₂ Precursor Layers

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Quality assessment of chalcopyrite thin films using Raman spectroscopy

Cited by 21 publications

References 8 publications

Effects of sulfurization and Cu/In ratio on the performance of the CuInS2solar cell

Effects of sulfurization and Cu/In ratio on the performance of the CuInS2solar cell

Effect of thickness on the microstructural, optoelectronic and morphological properties of electron beam evaporated ZnTe films

Postdeposition Sulfurization of CuInSe2 Solar Absorbers by Employing Sacrificial CuInS2 Precursor Layers

Contact Info

Product

Resources

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Effects of sulfurization and Cu/In ratio on the performance of the CuInS₂solar cell

Effects of sulfurization and Cu/In ratio on the performance of the CuInS₂solar cell

Postdeposition Sulfurization of CuInSe₂ Solar Absorbers by Employing Sacrificial CuInS₂ Precursor Layers