Qualification of a new supplier for silicon particle detectors

Dragicevic, M.; Bartl, U.; Bergauer, T.; Frühwirth, E.; Gamerith, Stefan; Hacker, J.B.; Kröner, F.; Kucher, E.; Moser, Josef; Neidhart, T.; Schulze, Holger; Schustereder, Werner; Treberspurg, W.; Wübben, T.

doi:10.1016/j.nima.2013.07.022

Cited by 9 publications

(3 citation statements)

References 3 publications

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“…These parameter variations are referred to as split groups. The first production aimed to re-produce the state-of-the art 60 of silicon sensors of that time, which were based on n-type float-zone 6-inch Silicon wafers [8]. The wafer layout is shown in figure 1 a).…”

Section: Achievementsmentioning

confidence: 99%

History, status and prospects of producing silicon sensors for HEP experiments at Infineon Technologies

Bergauer

Bartl

Blöch

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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Within this project we are developing single-sided AC-coupled silicon strip sensors and DC-coupled hexagonal pad sensors for applications in High Energy Physics (HEP) experiments. The project started with a feasibility study to re-produce the state-of-the art of silicon sensors of that time, which were based on high-resistivity n-type float-zone 6-inch silicon wafers. Later, the first silicon strip sensors on 8-inch p-type wafers were produced within this project. This influenced the decision of another project to build a silicon sensor based sampling calorimeter. This paper presents the history, current status, and prospects of this sensor development project, jointly conducted by the

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Section: Achievementsmentioning

confidence: 99%

History, status and prospects of producing silicon sensors for HEP experiments at Infineon Technologies

Bergauer

Bartl

Blöch

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

Self Cite

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“…The electrical characterization includes the IV and CV characteristic of the full sensor and several parameters of each individual strip [1]. For the characterization of the observed accumulation of weak strips it is convenient to focus on the leakage current of each strip (I strip ) and the resistance of the polysilicon bias resistor (R poly ).…”

Section: Wafer Design and Sensor Structuresmentioning

confidence: 99%

“…The overall results of the electrical characterization of the first batch have delivered promising results [1]. Nevertheless zones with weak strips exist, which accumulate in distinctive areas and feature the same electric behaviour.…”

Section: Introductionmentioning

confidence: 98%

Optimizing the quality of silicon strip sensors produced by Infineon Technologies Austria AG

Treberspurg¹,

Bartl²,

Bergauer³

et al. 2014

J. Inst.

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The tracking systems of most modern particle physics experiments are realized by silicon based sensors. The size of such systems has continuously increased and nowadays a sensitive area of several 100 m 2 has to be covered. This large amount of sensors might exceed the production capabilities of existing companies and institutes. Therefore the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) and the European semiconductor manufacturer Infineon Technologies Austria AG developed together a production process for p-on-n strip sensors. Although the first prototype run has shown a promising quality, it has been observed that weak strips exist, which are mainly located at distinctive areas on each wafer. At these areas the affected parameters are correlated to each other. A similar behaviour could be reproduced with a smaller second batch, whose sensors have been used for further analysis and advanced measurements. This paper sums up the characteristic behaviour of the specific effect and presents different possibilities how to cure the sensors. The systematic accumulation of weak strips can be traced back to a specific operation during the fabrication process. All data strongly indicate that the effect is caused by local charging effects on an isolating layer.

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Results from a beam test of silicon strip sensors manufactured by Infineon Technologies AG

Dragicevic

Auzinger

Bartl

et al. 2014

Nuclear Instruments and Methods in Physics Research Section A:

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Qualification of a new supplier for silicon particle detectors

Cited by 9 publications

References 3 publications

History, status and prospects of producing silicon sensors for HEP experiments at Infineon Technologies

History, status and prospects of producing silicon sensors for HEP experiments at Infineon Technologies

Optimizing the quality of silicon strip sensors produced by Infineon Technologies Austria AG

Results from a beam test of silicon strip sensors manufactured by Infineon Technologies AG

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