PZT Thin-Film Meso- and Micro Devices

Abstract

This paper consists of three major topics. The first topic is a review of challenges encountered in PZT thin

Multilayer laminated piezoelectric bending actuators: design and manufacturing for optimum power density and efficiency

“…Previous work on multilayer piezoelectric bending actuators has mostly focused on thin-film piezoelectrics [4,5], which are appropriate for micro-scale devices but typically do not have sufficient output power for mm-cm scale devices. Additionally, bulk piezoelectrics generally have higher piezoelectric coefficients and are not limited to mm-size crack-free areas [6,7]. There have been several reports of multilayer bending actuators made with bulk materials, such as [8].…”

Effect of dopants on ferroelectric and piezoelectric properties of lead zirconate titanate thin films on Si substrates

“…Although sol-gel processes have been successfully used for many years, there remain tremendous challenges, such as defects (cracks and delamination), which effect the properties of PZT films. The sol-gel PZT films often consist of multiple coating in which each coating ranges from 15 to 100 nm in thickness [27], and the corresponding crackfree area is about 1 mm 2 [28,29]. The cracks are so densely populated and then the crack-free area is decreased with increasing number of coating layers (the sol-gel PZT film becomes virtually useless with film thickness exceeding 1 mm, as the crack-free area is so tiny [27]).…”

“…The sol-gel PZT films often consist of multiple coating in which each coating ranges from 15 to 100 nm in thickness [27], and the corresponding crackfree area is about 1 mm 2 [28,29]. The cracks are so densely populated and then the crack-free area is decreased with increasing number of coating layers (the sol-gel PZT film becomes virtually useless with film thickness exceeding 1 mm, as the crack-free area is so tiny [27]). In the piezoelectric thin film devices, such as membrane actuators and cantilevers, the obtained uniform and homogeneous PZT films with thickness of 0.75-1.00 mm and over a large area (2 cm 2 ) are required [30].…”

Growth of Perovskite (Bi, Ln)(Ni0.5Ti0.5)O3 Thin Films by RF Magnetron Sputtering

“…In recent years, significant practical research on ferroelectric thin films as element materials for high-performance ferroelectric random access memory (FeRAM) devices 1,2) and microactuators, 3,4) has been actively carried out. Although lead-based element materials have heretofore been used for electronic components, the use of lead is a significant public concern from the viewpoint of global environment conservation.…”