Pyroelectric Energy Conversion in Doped Hafnium Oxide (HfO<sub>2</sub>) Thin Films on Area‐Enhanced Substrates

Hanrahan, Brendan; Mart, Clemens; Kämpfe, Thomas; Czernohorsky, M.; Weinreich, Wenke; Smith, Andrew N.

doi:10.1002/ente.201900515

Cited by 23 publications

(12 citation statements)

References 40 publications

(50 reference statements)

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“…The possibility for nand p-type FeFETs [5] enables in addition a larger freedom for novel circuit designs. Moreover, this material system has spurred attention in other applications, like neuromorphic devices [6][7][8], energy harvesting [9,10], sensors and actuators [11,12].…”

Section: Introductionmentioning

confidence: 99%

Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

Lederer

Mertens

Olivo

et al. 2021

Journal of Materials Research

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Non-volatile memories based on ferroelectric hafnium oxide, especially the ferroelectric field-effect transistor (FeFET), have outstanding properties, e.g. for the application in neuromorphic circuits. However, material development has focused so far mainly on metal–ferroelectric–metal (MFM) capacitors, while FeFETs are based on metal–ferroelectric–insulator–semiconductor (MFIS) capacitors. Here, the influence of the interface properties, annealing temperature and Si-doping content are investigated. Antiferroelectric-like behavior is strongly suppressed with a thicker interface layer and high annealing temperature. In addition, high-k interface dielectrics allow for thicker interface layers without retention penalty. Moreover, the process window for ferroelectric behavior is much larger in MFIS capacitors compared to MFM-based films. This does not only highlight the substrate dependence of ferroelectric hafnium oxide films, but also gives evidence that the phase diagram of ferroelectric hafnium oxide is defined by the mechanical stress. Graphic Abstract

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Section: Introductionmentioning

confidence: 99%

Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

Lederer

Mertens

Olivo

et al. 2021

Journal of Materials Research

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“…One solution for increasing the sensor current is to use an array of pyroelectric sensors, as discussed earlier, or a micromachined Si array (see Figure 27), of tens of millions of trenches. [50][51][52] In the last case, a current of few nA is generated when changing the temperature between 29 and 31 C. The ECE effect was also termed as giant in the case of Hf ZrO, raising the hope for miniaturized solid-state refrigerators, which are key components in many industries where heat is produced. In particular, such devices are of interest for microprocessors, where for many years the dissipated heat is the main obstacle to increase significantly the performances.…”

Section: Energy Harvesting Using Hfo 2 -Based Ferroelectricsmentioning

confidence: 99%

“…One solution for increasing the sensor current is to use an array of pyroelectric sensors, as discussed earlier, or a micromachined Si array (see Figure ), of tens of millions of trenches. [ 50–52 ] In the last case, a current of few nA is generated when changing the temperature between 29 and 31 °C.…”

Section: Energy Harvesting Using Hfo2‐based Ferroelectricsmentioning

confidence: 99%

HfO₂‐Based Ferroelectrics Applications in Nanoelectronics

Dragoman

Aldrigo

Dragoman

et al. 2021

Physica Rapid Research Ltrs

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In memoriam of Prof. Dan Dascalu IntroductionHafnium oxide (HfO 2 ) is the dielectric commonly used in fieldeffect transistors (FETs) fabricated in complementary metal oxide semiconductor (CMOS) technologies and, as such, retrieved in any very large-scale integrated (VLSI) circuits. Examples of such circuits include microprocessors or complex analog integrated circuits found in daily applications, for instance, in computers, smartphones, laptops, or incorporated in cars, airplanes, or medical equipments. Since the discovery of HfO 2 as a dielectric for modern integrated circuits, increasing its permittivity was a leading research issue in itself because higher permittivity values allow decreasing the effective oxide thickness (EOT), and so the leakage current; this is especially important when billions of Si FETs are integrated on a single chip. The solution found to boost the permittivity of HfO 2 is represented by structural phase transformations. [1] HfO 2 has its lowest electrical permittivity (ε r % 18) in its stable phase, which is the monoclinic phase. Higher permittivity values, of ε r % 27 in the cubic phase and ε r % 70 in the tetragonal phase, are achieved, nonetheless, in phases that are stable only at very high temperatures, exceeding 1700 C. The decrease in these temperatures is possible, however, by HfO 2 doping. Thus, the cubic and the tetragonal phases were first obtained at lower temperatures via Y doping [1] and, respectively, Si doping, [2] whereas a stable HfO 2 tetragonal phase at nearly room temperature was observed by growing HfO 2 via atomic layer deposition (ALD) and doping it with ZrO 2 . [3,4] As described in the recent review, [5] the stabilization of these phases is determined by the concentration of dopants, the annealing temperature, and the growing methods.These initial investigations focused on increasing the permittivity of HfO 2 lead eventually to the discovery of the orthorhombic phase of HfO 2 , which was associated with HfO 2 ferroelectricity. [6,7] This phase is obtained under different growth conditions in the presence of dopants, including those mentioned earlier, and requires strict control of dopant concentration, temperature, and mechanical strain. The most used orthorhombic HfO 2 -based ferroelectric, named further as Hf ZrO, is doped with Zr and is usually grown at the wafer level, up to 300 mm, using ALD. It thus benefits from the state-of-the-art CMOS technology. More recently, using Zr-doping and pulsed laser deposition (PLD), another rhombohedral phase of HfO 2 was discovered to be also ferroelectric. [7] The rhombohedral or orthorhombic Hf ZrO are ferroelectrics with similar electric performances; the origin of stable ferroelectricity in both cases being due to the induced strain between the top and/or down substrates sandwiching Hf ZrO. [8] Doping or strain application modifies the atomic structure of a material and can induce a phase transition, in particular can induce ferroelectricity in HfO 2 . Similarly, HfO 2 can transform into a weak magnetic material [9...

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“…Recently, it was reported that the TiN/Si:HfO 2 /TiN structure deposited on the area-enhanced silicon substrate exhibited a large pyroelectric coefficient (−1442 μC/m 2 K). 147…”

Section: Hfo 2 -Based Infrared Sensorsmentioning

confidence: 99%

“…Additionally, the pyroelectric coefficient of the HfO 2 thin films can be further improved by the deposition of metal/insulator/metal structure on an area-enhanced silicon substrate. Recently, it was reported that the TiN/Si:HfO 2 /TiN structure deposited on the area-enhanced silicon substrate exhibited a large pyroelectric coefficient (−1442 μC/m 2 K) …”

Section: Hfo2-based Infrared Sensorsmentioning

confidence: 99%

Recent Progress on Energy-Related Applications of HfO₂-Based Ferroelectric and Antiferroelectric Materials

Ali

Zhou

Ali

et al. 2020

ACS Appl. Electron. Mater.

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Ferroelectric and antiferroelectric materials are promising options for energy-related (such as energy harvesting, energy storage, IR detection, and refrigeration) and memory applications (such as ferroelectric random-access memory (FeRAM) and ferroelectric field-effect transistor (FeFET)). In the past, several classes of materials (such as polymers, ceramics, single crystals, and glasses) have been studied for these properties. However, because of a large deposition thickness (in micrometers or larger), these materials are inappropriate for future nanoscale devices. Recently, the ferroelectric and antiferroelectric HfO2-based thin films have also been studied for the energy-related and memory applications. HfO2-based materials have many advantages over the conventional materials, such as compatibility with Si-based semiconductor technology, ultrasmall thicknesses (nm), and simple compositions, and they are appropriate for integration within 3-D nanostructures. HfO2-based materials can be promising for energy-related applications, such as energy storage, pyroelectric energy harvesting, IR sensors, and solid-state cooling. This article provides some basic knowledge of these energy-related properties. Moreover, this article reviews the energy-related properties of HfO2-based thin films, their origins, and the prospects of this research field.

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Pyroelectric Energy Conversion in Doped Hafnium Oxide (HfO₂) Thin Films on Area‐Enhanced Substrates

Cited by 23 publications

References 40 publications

Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

HfO₂‐Based Ferroelectrics Applications in Nanoelectronics

Recent Progress on Energy-Related Applications of HfO₂-Based Ferroelectric and Antiferroelectric Materials

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Pyroelectric Energy Conversion in Doped Hafnium Oxide (HfO2) Thin Films on Area‐Enhanced Substrates

Cited by 23 publications

References 40 publications

Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

HfO2‐Based Ferroelectrics Applications in Nanoelectronics

Recent Progress on Energy-Related Applications of HfO2-Based Ferroelectric and Antiferroelectric Materials

Contact Info

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Pyroelectric Energy Conversion in Doped Hafnium Oxide (HfO₂) Thin Films on Area‐Enhanced Substrates

HfO₂‐Based Ferroelectrics Applications in Nanoelectronics

Recent Progress on Energy-Related Applications of HfO₂-Based Ferroelectric and Antiferroelectric Materials