Push-pull circuits using n-p-n and p-n-p InP-based HBT's for power amplification

Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

“…6 The focus in this work is the realization of a P-n-P GaAs/InGaAsN/GaAs DHBT, which in conjunction with the N-p-N InGaAsN based HBT technology, would allow the low-power InGaAN based CHBT technology to take advantage of the matured GaAs foundries. The effect on the band alignment of incorporating In and N into GaAs.…”

Low-frequency noise characteristics of p-n-p InAlAs/InGaAs HBTs

“…The p-n-p InAlAs/InGaAs HBTs used in this study were fabricated in-house and demonstrated good high-frequency, smallsignal, and power characteristics [6]. Devices with 5 10 m emitter size presented GHz and GHz, and a maximum power density of 0.49 mW/ m at 10 GHz.…”

“…The low-frequency noise characteristics of n-p-n InP-based HBTs have been reported [3]- [5]. However, no reports are available on the low-frequency noise characteristics of p-n-p InP-based HBTs.The p-n-p InP-based HBTs are relatively new and can be employed to build complementary microwave circuits [6] or used as active loads [7]. In this letter, the low-frequency noise characteristics of p-n-p InAlAs/InGaAs HBTs were studied.…”

A wide-band monolithic differential power amplifier

“…The push-pull amplifier is a basic building block for differential PA. But the research on push-pull amplifier with a complementary P-n-p/N-p-n InGaP/GaAs HBT pair appears being ignored due to the complexity in fabrication [3,4,5,6]. A high-efficiency class-AB pseudo-push-pull amplifier designed with N-p-n HBTs alone can be realized by using a 180-degree phase splitters (or baluns) [7,8].…”